30S3 Search Results

T3040

Abstract: DO215AA 30S8
Contextual Info: Microsemi Standard Recovery Rectifiers 1N5401 1N5401G P 30S1 S3B UT3010 1N1124 1N1583 1N5402 1N5402G P 30S2 S3D UT3020 1N1125 1N1584 1N5403G P 30S3 1N1126 1N1585 1N5404 1N5404G P 30S4 S3G U T3040 1N1127 1N1586 1N5405 1N5405G P 1N1128 1N1587 1N5406 1N5406G P

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

30D15-DN

Abstract: 30S5-DN 30T515-DN 30S3 30D12-DN
Contextual Info: 4 Power Supplies SCP Series, 30 Watt; Single, Dual and Triple Selection Table Output Voltages Low Profile Catalog Number Description V1 Vdc V2 A Vdc V3 A Vdc A Min Load V1 A Efficiency % 30 Watts; Switching DC Power Supply 3.3 V 3.3 6.0 - - - - ≥ 62 SCP 30S5-DN

30s8 diode

Abstract: 30S4 DIODE 30S10 diode 30S10 30S1 30S2 30S3 30S4 30S5 30S6
Contextual Info: 30S SER IES Microsemi Corp. ' r ^p 0:oap p u n e n SCOTTSDALE, A l F o r m o re in fo rm a tio n call: 602 941-6300 DESCRIPTION/FEATURES 3 AM P M E D IU M POWER SIL IC O N RECTIFIER D IO D E S • ECONOMICAL SERIES • HIGH SURGE. 150 AM P M A XIM U M • UNIVERSAL REPLACEM ENT FOR MANY GLASS, EPOXY,

FDS 4468

Abstract: HBT 01 - 04G INTEL 486 sx sl pinout 240950 JVC 4580 fds 4418 TOT - 4301 INTEL DX4 241199 Intel DX4TM
Contextual Info: intj, INTEL486 PROCESSOR FAMILY • Write-Back Enhanced lntelDX4™ Processor — Up to 100-MHz Operation — Speed-Multiplying Technology — 32-Bit Architecture — 16K-Byte On-Chip Write-Back Cache — Integrated Floating-Point Unit — 3.3V Core Operation with 5V Tolerant

N300V

Contextual Info: 1MBI300F-060 300A IGBT M )\> i l : Outline Drawings IGBT MODULE Features • ‘l & f & in B S Low Saturation Voltage • W ± I E i i (M O S - y — M ffifi) • Voltage Drive Variety of Pow er Capacity Series • £ ]& : Applications • i — 9 — E t t f f l'f

ESJC11-09

Abstract: lg magnetron esjc
Contextual Info: E S J C 1 1 9kV, 12kV : O utline D raw ings HIGH VOLTAGE SILICON DIODE E S JC 1 1 (i, E S J C 1 1 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin.

m210 g

Abstract: J3E diode
Contextual Info: 2DI100Z-100 iooa : Outline Drawings POWER TRAN SISTO R MODULE ÌR 25 F e a tu re s • S W JÏ High Voltage • 7 'J — jfr-f y — KrtflK • A S O A 'J ÏIl' • ÿfeiiïïi Including Free W heeling Diode Excellent Safe Operating Area Insulated Type • Æ liÉ ^ A p p lic a t io n s

OC171

Contextual Info: 6MBI30FA-060 30A IGBT ^E'>zl- ; u •Outline Drawings IGBT MODULE OC»! 1 ft 6 17 1Û 6 • • «EES£ » (M O S ^ - M * ig ) _ Voltage Drive =H p js e W ' tp P f t jd S a î p * ■& Variety of Pow er Capacity Series a L j , S • AC, D C 'ti'— # 7 > " ?

IR 30S1

Abstract: ir 30S10 IR 30S2
Contextual Info: MCC TM Micro Commercial Components 30S1 thru 30S10
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • 3 Amp Medium Power Silicon Rectifier 50 - 1000 Volts Glass Passivated Chip

Contextual Info: Panasonic ICs for Telephone AN6157NK Speech Network Circuit • Overview The AN 6157N K is a speech network IC with a side tone preventive circuit network switching function. It enables manual/automatic switching and realizes good side-tone characteristics under any line conditions, including com­

2FI100G

Abstract: 30S3 2fi100
Contextual Info: 2FI100G 2xiooa W JB '+ jä : Outline Drawings FAST RECOVERY DIODE MODULE etc_ 17.8 Features H -J L . 1« • If e lM U W f t * • 3 Ì « Short Reverse Recovery Time Variety of Connection Menu Insulated Type : Applications •7 — r- r^ n ^ r- |

1DI75F-100

Abstract: wj 75 M206 je 243 30A45
Contextual Info: 1DI75F-100 75A )V ✓< 7 — : Outli ne Drawings POWER TRANSISTOR MODULE • F ea tures • fiÜ iÆ • 7 'J — H ig h V o lta g e Tfr'f1) In c lu d in g F ree W h e e lin g D io d e • A S O A ^Ja L ' E x c e lle n t S a fe O p e ra tin g A re a In s u la te d T yp e

2SC3723

Abstract: H150 T151 T460 T760 T930
Contextual Info: 2SC3723 ' ñ ± ' < r7 - Y :7 > i > * 9 N P N = n & M - 7 i'- i- M TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE, HIGH SPEED SWITCHING ¡ ÍÍ/ ± , • Jfljii/ E A , .* Features "/?->? • JS fffB 'li High voltage, high speed switching High reliability : Applications

TS902C2

Contextual Info: T S 9 0 2 C 2 ioa K : O utlin e D ra w in g s LOW LOSS SUPER HIGH SPEED RECTIFIER Features Surface m ount device •1&V K Low V [.• C o n n e c tio n D iagram Super high speed sw itching. • ttffiU Ji& A fl *St4 H igh reliability by planer design r ^

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

DIODE B36

Abstract: ml25 M104 T151 ETN85-O5O Transistor B36
Contextual Info: ETN85-O5O 300a POWER TRANSISTOR MODULE • f ô f t ^ Featurés • 7 'J — 'J K rt/K Including Free Wheeling Diode • ASO ti'l a ^ v Excellent Safe Operating Area •m m Insulated Type ■ ffliÊ : A p p lic a tio n s " jT • High Power Switching • AC ^ —

2SA733AP

Abstract: 2N3055B 2sc945b 2SA733A S8550D sa15tp TPT5609 MP1010B s8050d S9012H
Contextual Info: MCC's EU RoHS and Green Halogen Antimony Free Parts List Package RoHS Compliant EU RoHS Exemption Code 1.5KE10-TP/AP/BP DO-201AE X 7a Matte Tin 1.5KE100-TP/AP/BP DO-201AE X 7a 1.5KE100A-TP/AP/BP DO-201AE X 1.5KE100C-TP/AP/BP DO-201AE 1.5KE100CA-TP/AP/BP

MB345

Abstract: MB323 MB317 ES1303 MX4115 MB313 B338 914f MX3120 MB339
Contextual Info: RECTIFIER and S IG N A L S E L E C T IO N GUIDE Avg. D C Output A .5 A Package Style Reverse Ree. Time 4-5 nsec 50-100 nsec 1.0 A A A A A A A A 250-400 nsec >400 nsec 20 nsec 75 nsec 100-200 nsec 250-500 nsec >500 nsec M B207 MB341 MB313 M B314 MB342 M B316

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

t930

Abstract: 2SC4273 T151 T460 T810
Contextual Info: 2SC4273 N P N TRIPLE D IFFU SED PLANER TYPE = B fe ift7 ^ - ± ? ß HIGH VOLTAGE, HIGH SPEED SWITCHING JÜ M E , • : Outline Drawings 4.5*0! IMiSf |0t8a .13 V y- I Features • •^ H High speed sw itch in g 1Î 3 Low saturation voltage • S fjtfS ti High reliability

ESJC07-09B

Abstract: ESJC07 ESJC07-12B micro wave oven xbt n 200 PE-S-11 IR 9515 JC-07
Contextual Info: ESJC07 9kV, 12kV : O utline Drawings HIGH VOLTAGE SILICON DIODE * n t < z > # « a t f i » » « - ^ K a » E * a i y - r 3 i — K rto ESJC07 is high reliability and high current capability type resin molded high voltage silicon diode w hich is sealed a

2SC3317

Abstract: T151 T760 T930 2sc331 7A SF SC 30
Contextual Info: 2 S C 3 3 1 7 N P N = f t Ì É Ì $ [ 7 V — Ì-Jfc TRIPLE D IFFUSED PLANER TYPE «W Œ , HIGH v o l t a g e , h ig h s p e e d s w it c h in g • : Outline Drawings 4 .5*02 ?3-6:8! io-§5 ,1.3 ■ ¡ t t f i : Features • High speed switching • fififS t t

Contextual Info: ETL81-O5OO00A POWER TRANSISTOR MODULE : Features • 7 i; — y y ? • ASO KrtJ Including Free W heel Excellent Safe Operating Area • & HkM Insulated Type * Applications • Power Switching *><4 • AC ^ — A C Motor Controls • DC ^ — D C Motor Controls