T760 Search Results

xt760

Abstract: lt760
Contextual Info: POLJEREX INC m t /u o "□ä x x DE| 7 2 T4 b S l DDGaflfifl 4 T760 Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 926-7272 Powerex Europe, S.A., 428 Ave. G. Durand, BP107, 72003 LeMana, France (43) 72.7S.1S Phase Control SCR 300 Amperes Avg

DIN41814

Abstract: 25CC T760S DIN418
Contextual Info: E G CORP fil T760S DE • DDSTMSti O D D S ^ S D I Typenreihe/Type range_ T 7 60S_ 2000_ 2200_ 2400_ 2600* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte U d h m , U r r m Periodische Vorwärts- und

B11-1960

Abstract: RS-397 marking asa T760 BP107 T7601030 RS397
Contextual Info: "□ä POLJEREX INC -, D E 7ST4bai □□□aflfifl 4 m/uata T760 Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412) 926-7272 Phase Control SCR Powerex Europe, S.A., 428 Ave. G. Durand, BP107, 72003 LeMans, France (43) 72.7S.1S 300 Amperes Avg

B11-1960

Abstract: T760 LT 428 A180 A-20 BP107 T7602030
Contextual Info: T760 Phase Control SCR Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 3QQ A m p e re s A v e ra g e 2000 Volts Millimeters Inches Dimensions

Contextual Info: b4E ]> • 72T4bEl ÜDGbMDfl bhü mP R X T760 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 P h d S G C O fltr O l S C R Amperes Average

82801GBM ICH7M

Abstract: 945GM mPGA479M intel Micro-FCBGA pinout centrino ICH7M 82801GBM L7200 Intel Centrino Duo Mobile "September 2007" T5500
Contextual Info: Intel Core 2 Duo Mobile Processor for Intel® Centrino® Duo Mobile Processor Technology Datasheet September 2007 Document Number: 314078-004 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED,

MBH60D-090A

Abstract: 1MBH60D 1MBH60D-090A 30S3 H150 aft7
Contextual Info: 1MBH60D-090A g ilG B T IGBT : Outline Drawings INSULATED GATE BIPOLAR TRANSISTO R ^ Features • i H i g h Speed Switching • fëtâifllïJiE Low Saturation Voltage • hÎ SÎ ÆÎ MOSV— Hi gh Impedance Gate »/j\ggy{.y^ - _ S m a l l Package : Applications

ET-188

Abstract: ET188 T460 T760 A209
Contextual Info: ET188 ' Ë ± ' < T7 - Y s7 > i ï X 9 TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON N P N = Â tt« ÿ V - * J& HIGH VOLTAGE, HIGH C U R R E N T , HIGH S P E E D S W IT C H IN G • I Outline Drawings I Features • fijliJE High voltage • ffiiffHifc

Contextual Info: New Product T760, T760, T760 & T760 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AC TO-220AC • Low forward voltage drop, low power losses

Contextual Info: Am6073 Companding D-to-A Converter for PCM Communication Systems Distinctive Characteristics • • • • • • • • Tested to CCITT A-law tracking specification • Absolute accuracy specified - includes all errors over temperature range • Settling time 300ns typical

Contextual Info: PG905C4 2 oa ± 'j LOW LOSS SUPER HIGH SPEED RECTIFIER i Features Insulated package by fully m o ld in g . • F Low V f wc Connection Diagram Super high speed sw itching. • 7 V - - * 514 High reliability by planer design. WR& I Applications High speed pow er sw itching.

Contextual Info: 2DI50M-1 2 0 50a / ' 7 - h 7 ' s i * * ? * : Outline '> Drawings POWER TRANSISTOR MODULE : Features • • h F E ^ 'B ^ ' • 7 'i — • i& tiJ fi High Arm Short Circuit Capability High DC Current Gain KF*33R Including Freew heeling Diode Insulated Type

A373

Contextual Info: ERC88M-00915A SCHOTTKY BARRIER DIODE : F eatures In sulated pa ckage by fu lly m o ld in g . • 1S:VF Low V F C o n n e c tio n D ia g ra m S u p e r high speed s w itc h in g . • T ' U '- t - t t t t C J & f t l B f t i t e H ig h re lia b ility by p la n e r d e s ig n .

Contextual Info: ESAB92M-03 5Ai Outline Drawings LOW LOSS SUPER HIGH ED RECTIFIER : Features Insulated package by fully m olding. • ftV F Low V F Connection Diagram Su p er high speed switching, High reliability by planer design. • : Applications High speed power switching.

u878

Contextual Info: KS926S2 5A LO W LO SS S U P E R HIGH SPEED RECTIFIER : Features • B&££A Surface m ount device. • teVp Low V y Connection Diagram S u pe r high speed sw itching. • y u - i — s u m - j: * * « fs tt H igh reliability by planer design : Applications

transistor f151

Abstract: transistor b136
Contextual Info: 6DI15MS-05005A • O utline D ra w in g s POW ER TR A N S IS TO R M O D U LE : Features • h F E * '' S t ' H igh D C C urrent Gain • KA^jSv,' • 7' J — High speed sw itching J"— K 1^9HSc • Inclu ding F r e e w h e e lin g D iode Insulated Type

Contextual Info: 2FI100G 2 xiooa " i i : Outline Drawings Y * i * n . —)V _ FAST RECOVERY DIODE MODULE 91*“ . «O'" 61R 176 b 0 G Ml - • . 11 ■ 4 # ^ : F eatures L' • t tt ta f lW ft* • 1-ft 1JU_ <Ì S hort Reverse Recovery Time Variety of Connection Menu

Contextual Info: 2M BI75L-120 75A IG B T = £ \> z l - ) V (L S E R IE S ) IG B T M O D U L E : Features • " j + ' s 'f • flf c iS in ^ E • « s e n H ig h S peed S w itc h in g L o w S a tu ra tio n V o lta g e ( M O S tf- H iit) • V o lta g e D rive V a rie ty o f P ow er C a p a city Series

Contextual Info: 1DI300MP-050 300A : Outline Drawings ' < r7 - b ? it. PO W ER T R A N S IS T O R M O D U LE .h ai -,-ia-rJO-, •iNHS: : Features • h p E ^ 'S u High DC Current Gain B • Js iS W S iS liE ^ J^ : Applications >'< —$ • i/lffl'f General Purpose Inverter

transistor kp 303

Contextual Info: 1DI5OF-12O 50a • Outline Drawings / < r7 - ï = 7 > i > 7 . $ :£ ' > = L - i \ ' POWER TRANSISTOR MODULE : F e a tu re s • f i Ü i/ ± H igh V oltage • 7' J — Kr t j f t • A S O A * j£ ii' • ÜêÎiJfé In c lu d in g F r e e w h e e lin g D io d e

ESJC11-09

Abstract: lg magnetron esjc
Contextual Info: E S J C 1 1 9kV, 12kV : O utline D raw ings HIGH VOLTAGE SILICON DIODE E S JC 1 1 (i, E S J C 1 1 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin.

2DI75Z-100

Contextual Info: 2DI75Z-100 75a : Outline Drawings /< 7 — POWER TRANSISTOR MODULE : F e a tu re s • ffiifiiŒ High Voltage • 7 U —Jf'-f y > ? ¥ <i + — KF*3jfft • A S O *''/£*<' • Including Free W heeling Diode Excellent Safe Operating Area Insulated Type Applications

Contextual Info: 2SC4622 t ± ' < r7 - h 7 > S * X ÿ TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE, HIGH SPEED SWITCHING : Outline Drawings 4 .5*0 2 I Features • H igh speed sw itching • Low saturation voltage • High reliability I A p p lic a tio n s is—9 • X -f • D C -D C u w < —9

DIODE JS4

Abstract: ERA17 T460 JT MARKING MWRA t930 30S3 T151 T760 T810
Contextual Info: ERA17 1.0A : Outline Drawings GENERAL USE RECTIFIER DIODE • i t s : Features • S'J'32*fcK>, 5mm£y*- @ f t » A * ^ 8 6 Ultra small package, possible for 5mm pitch automatic insertion. • S ffJIS 'tt High reliability \ tjk : Marking ESD-proof * 7-=i-K : â