1N1127 Search Results

T3040

Abstract: DO215AA 30S8
Contextual Info: Microsemi Standard Recovery Rectifiers 1N5401 1N5401G P 30S1 S3B UT3010 1N1124 1N1583 1N5402 1N5402G P 30S2 S3D UT3020 1N1125 1N1584 1N5403G P 30S3 1N1126 1N1585 1N5404 1N5404G P 30S4 S3G U T3040 1N1127 1N1586 1N5405 1N5405G P 1N1128 1N1587 1N5406 1N5406G P

1N1182

Abstract: diode 1N1188 1N1111 1N1130 1N1119 1N1184 1n1194 1N1118 1N1120 1N1124
Contextual Info: 3869720 G E N E R A L DIODE CORP 86D 00323 GENERAL DIODE CORP flb D T~ DE~ 3fiLT720 □□□□323 1 STUD MOUNTED SILICON POWER RECTIFIERS . . . cont’d i\\ \ l l\1 TYPE \ 1N1118 1N1124 ÍN1124A 400 500 600 200 200 1N1125 1N1125A ' 1N112S 1N1126A 1N1127

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

jan1n12

Abstract: 1n1118r 1N1120R JANTX1N1202A 1N1124 N1206 1N1120
Contextual Info: rectifiers 24 JEDEC 10 Part Number A 1N607, R 1N607A, RA 1N608, R 1N608A, RA 1N609, RA 1N609A, RA 1N612, R 1N612A, RA 1N613, R 1N613A, RA 1N614, R 1N614A, RA 1N115, R 1N1118, R 1N1119, R 1N1120, R 1N1124, R 1N1124A, RA JAN1N1124A/104 1N1125, R 1N1125A, RA

S20460

Abstract: 1N1199 1N1199A 1N1199B 1N1200 1N1200A 1N1200B 1N1201 1N1201B S20410
Contextual Info: Sil 'con F3OW er Rectifier s / R 2 - Series Dim Inches M illim eter Minimum Maximum Minimum Maximum Notes J 1 h p ^ ^ f J in V 11 A— ü 1 c. F t 1 E A B C D E F G H J M N P Notes: 1. 1 0 - 3 2 UNF3A 2. Full th re ad s within 2 1 /2 threads 3. Standard P olarity: Stud is

Contextual Info: STANDARD RECOVERY RECTIFIERS STUD BASE DO-4 & DO-5 lQ RATING TO 60 AMPS FEATURES: DESCRIPTION • Hermetic Seal This is a series of general purpose rectifiers with average forward current ratings up to 60 Amps. They are for general purpose use in power supply and other rectification applications.

1N1342

Abstract: 1N1199 1N1202 1N1124 1N1201 1N1581 1N13468 1N1348 1N1200A 1N1200
Contextual Info: 8 3D 00 172] 8136650 S E M I C O N D U C T OR S INC A3 Silicon Power Rectifiers D E | fll3btiSD Ú/- J 7 QD0D17E fl 6 AMP - D04 Peak Reverse Voltage JEDEC Numbers 1N1341, 1N1612, 1N1342, 1N1613, 1N1341 A, 1N1341B, 1N1581, 1N2228, 1N2491 1N1342A, 1N1342B, 1N1582,

1N2222A

Abstract: 1n2222 IN2071A 1N3934 1N3578 IN222 IN1342 IN5054 IN5053 1N3549
Contextual Info: xcmicron - _ SB._ 27E » • MäbTEMb 00005=17 MäbTEMb O OOOST? s em ic o n d u c to r s S e m itr o n ic s C o r p . IN T E X / S E M IT R O N IC S silicon rectifiers cont’d miniature axial lead silicon rectifiers T»» 1N3241 1N3242 1N3243 1N3244

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

1N3610

Abstract: 1N1118 1N2222 1N1502 1N1120 1N39 1N12068 HA 12058 1N1119 1N1227
Contextual Info: STANDARD RECOVERY RECTIFIERS STUD BASE DO-4 & DO-5 lQ RATING TO 60 AMPS FEATURES: DESCRIPTION • Hermetic Seal • High Temperature Operation • Metallurgical^ Bonded This is a series of general purpose rectifiers with average forward current ratings up to 60 Amps. They are for general purpose use in

1N3549

Abstract: 1N2482 IN2071 1N553 INI128 1N2070 1N3247 1N3245 1N33 1n256
Contextual Info: xemitran ffP IP P ftih v V P B M 5?E D • OOOOHT? fi semiconductors SemitronicsCorp. INTEX/ SEMITRONICS discrete devices CORP silicon rectifiers cont’d miniature axial lead silicon rectifiers DO-41 case style— t»m 1N3241 1N3242 1N3243 1N3244 1N3245 1N3246

1N237A

Abstract: M1413 1N1732
Contextual Info: jo m itro n ic r sem iconductors s s Sem ilronics Corp. stud mounted silicon power rectifiers DO-4 case style Maximum Average Forward Current Amps @ Case Temp. (°C) Maximum Forward Voltage (volts) (S: Forward Current (Amps) Maximum Peak Reverse Voltage

1N1199

Abstract: 1N1199A 1N1199B 1N1200 1N1200A S20410 S20420 S20440
Contextual Info: Silicon Power Rectifier S/R204 Series Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes H I Notes: 1. 1 0 - 3 2 UNF3A 2. Full threads within 2 1 /2 threads 3. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode □ A B C D E F G H

1N1128

Abstract: 1N120 1N119 1N1124 S20460 1N1199 M600400 1N1199B 1N1200 1N1200B
Contextual Info: Silicon Power Rectifier S/R204 Series Dim Inches M illim eter Minimum Maximum Minimum Maximum Notes A B C D E F G H J M N P Notes: 1. 1 0 - 3 2 UNF3A 2. Full threads within 2 1 /2 threads 3. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode

1N1066

Abstract: 1N1344A
Contextual Info: Silicon Power Rectifier S/R20 Series Dim. Inches M illim e te r M inim um M axim um Minimum M aximum N otes A B C D E F G H J M N P Notes: 1. 1 0 - 3 2 UNF3A 2. Full th re a d s w ithin 2 1 / 2 th re a d s 3. S ta n d a rd P olarity: Stud is Cathode Reverse P olarity: Stud is

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

1N1115

Abstract: 1N255 MR1121 1N1118 1N1540 1N254 1N1116 MR1120R 1N1117 1N611
Contextual Info: MR1 120 th ru MR1 126 SILICON MR1128 MR1130 Medium-current silicon rectifiers featurehigh surge current capacity, and low forward voltage drop. CASE 245 (DO-4) M A X IM U M R A T IN G S Rating Symbol MR MR MR MR MR MR MR MR MR 1120 1121 1122 1123 1124 1125 1126 1128 1130

1N1120

Abstract: 1N2484 1N342 1N2226
Contextual Info: - x _ S B . _ _ _ c m i c r o 2 7 E » MäbTEMb • M äb T EM b IN T E X / S E M IT R O N IC S silicon rectifiers cont’d miniature axial lead silicon rectifiers T »» 1N3241 1N3242 1N3243 1N3244 1N3245 600 800 ■ 1000 1200 1500

wiring diagram audio amplifier ic 6283

Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Contextual Info: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor