1N1583 Search Results

T3040

Abstract: DO215AA 30S8
Contextual Info: Microsemi Standard Recovery Rectifiers 1N5401 1N5401G P 30S1 S3B UT3010 1N1124 1N1583 1N5402 1N5402G P 30S2 S3D UT3020 1N1125 1N1584 1N5403G P 30S3 1N1126 1N1585 1N5404 1N5404G P 30S4 S3G U T3040 1N1127 1N1586 1N5405 1N5405G P 1N1128 1N1587 1N5406 1N5406G P

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N1542

Abstract: 1n2238A
Contextual Info: rectifiers 10 Part A 150°C PIV rnA 150°C 6 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 3 3 3 3 3 3 3 5 5 5 5 5 5 5 5 5 5 5 5 5 600 50 100 150 200 300 400 500 600 50 100 200 300 400 500 600 50 50 100 100 200 240 200 400 480 400 600 720 600 50 200 300 400 500 600 500

1N1342

Abstract: 1N1199 1N1202 1N1124 1N1201 1N1581 1N13468 1N1348 1N1200A 1N1200
Contextual Info: 8 3D 00 172] 8136650 S E M I C O N D U C T OR S INC A3 Silicon Power Rectifiers D E | fll3btiSD Ú/- J 7 QD0D17E fl 6 AMP - D04 Peak Reverse Voltage JEDEC Numbers 1N1341, 1N1612, 1N1342, 1N1613, 1N1341 A, 1N1341B, 1N1581, 1N2228, 1N2491 1N1342A, 1N1342B, 1N1582,

1N2222A

Abstract: 1n2222 IN2071A 1N3934 1N3578 IN222 IN1342 IN5054 IN5053 1N3549
Contextual Info: xcmicron - _ SB._ 27E » • MäbTEMb 00005=17 MäbTEMb O OOOST? s em ic o n d u c to r s S e m itr o n ic s C o r p . IN T E X / S E M IT R O N IC S silicon rectifiers cont’d miniature axial lead silicon rectifiers T»» 1N3241 1N3242 1N3243 1N3244

1N3610

Abstract: 1N1118 1N2222 1N1502 1N1120 1N39 1N12068 HA 12058 1N1119 1N1227
Contextual Info: STANDARD RECOVERY RECTIFIERS STUD BASE DO-4 & DO-5 lQ RATING TO 60 AMPS FEATURES: DESCRIPTION • Hermetic Seal • High Temperature Operation • Metallurgical^ Bonded This is a series of general purpose rectifiers with average forward current ratings up to 60 Amps. They are for general purpose use in

LT3973-3.3

Abstract: IN4012 in401 IN1730 IN1118 IN3288 in2063 IM361 IN-17 1N1731
Contextual Info: ^ discrete devices | jemitronicr hot line TO LL FREE NUM BER 800-777-3960 silicon rectifiers stud mounted silicon power rectifiers DO-4 case style — Maximum Peak Reverse Voltage volts Type Maximum Average Forward Current (Amps) @ Case Temp. (°C ) Maximum

1N1064

Abstract: 1n2238A 1N1065 1N1066 1N1067 1N1068 1N1069 S2020 S2040 S2060
Contextual Info: Silicon Power Rectifier S/R20 Series Dim Inches M illim ete r M inim um M axim um A B C D E F G H J M N P N otes: 1. 1 0 - 3 2 UNF3A 2. Full th re a d s within 2 1 / 2 th re a d s 3. S ta n d a rd P o larity: Stud is C a th o d e R everse Polarity: S tu d is

1n2238A

Contextual Info: Silicon Power Rectifier S/ R 2 Q Series Dim. Inches M illim eter Minimum Maximum Minimum Maximum N otes n 11 1 k t t il J F E A B C D E F G H J M N P Notes: 1. 1 0 - 3 2 UNF3A 2. Full th re a d s w ithin 2 1 /2 th re ad s 3. S tandard P olarity: Stud is Cathode

IN1581

Abstract: LR Amps 1N1581 1N1582 1N1585 1N1586 1N1587 IN1581-IN1587
Contextual Info: E DAL INDU ST RIE S INC M5E D m 30=157113 0G0 027 7 Ô4T B i ED L ’7 z & l - i S ~ 7/l6" — ^ — h- 23/38“ MAX. 1"^"# |T « , HEX. 7/1«* ACROSS FLATS Bl PIV SEE T A B L E X0 S 3 AMPS 150 - V.f 1.5 Lr 500 AMPS V 6 AMPS 25 PIV f c a amps @ 150

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

Contextual Info: Silicon Power R e c t i f i e r eries Dim Inches M inim um 1 Jh A B C D E F G H J M N P N otes: 1. 1 0 - 3 2 UNF3A 2. Full th re a d s w ith in 2 1 / 2 th re a d s 3. S ta n d a rd P o la rity : S tu d is C a th o d e Reverse P o la rity : S tu d is A node

BROWN BOVERI

Abstract: B 170 BROWN BOVERI 1N1124 1N1344A N1346 S2010 1N1614 Diodes N1124 S2060 1N1342
Contextual Info: BROWN BOVERI «FMC B R O W N , B O V E R I & CI E AKTIENGESELLSCHAFT MANNHEIM Silicon Avalanche Power Rectifiers BBC Geschäftsbereich Halbleiter und Stromrichter Telefon 06206 503-1, Telex 04-65 727 Postfach 200, D-6840 Lampertheim Series 20 16 Amperes Average

1N1066

Abstract: 1N1344A
Contextual Info: Silicon Power Rectifier S/R20 Series Dim. Inches M illim e te r M inim um M axim um Minimum M aximum N otes A B C D E F G H J M N P Notes: 1. 1 0 - 3 2 UNF3A 2. Full th re a d s w ithin 2 1 / 2 th re a d s 3. S ta n d a rd P olarity: Stud is Cathode Reverse P olarity: Stud is

1N1347

Abstract: 1N1064 1N1065 1N1066 1N1067 1N1068 1N1069 S2020 S2040 S2060
Contextual Info: Silicon Power Rectifier S/ R 2 0 Series Dim Inches Millim eter Minimum Maximum Minimum Maximum Notes A B C D E F G H J M N P Notes: 1. 1 0 - 3 2 UNF3A 2. Full threads within 2 1 / 2 threads 3. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

1N1120

Abstract: 1N2484 1N342 1N2226
Contextual Info: - x _ S B . _ _ _ c m i c r o 2 7 E » MäbTEMb • M äb T EM b IN T E X / S E M IT R O N IC S silicon rectifiers cont’d miniature axial lead silicon rectifiers T »» 1N3241 1N3242 1N3243 1N3244 1N3245 600 800 ■ 1000 1200 1500

1N1581

Abstract: 1N1582 1N1583 1N1585 1N1586 INI587 1N1581-1N1587 in1584
Contextual Info: EDAL INDUSTRIES INC M5E D BQ^STlb 00QQ277 ÔMT « E D I ­ TTO/H 7/16" 23/31" MAX. -tifi- I';:.? iS ~ M J - i N a 10-32 UN F-EA HEX. 7/1«* ACROSS FLATS £ B. PIV SEE TABLE ro °c AMPS 1 1 xr 150 @ 3 AMPS 1.5 500 AMPS FCA 7 @ 6 AMPS @ 25 °c PIV @ 150 °c

R2045

Abstract: 1N1614 Diodes INI615 R2070 10-32 UNF 2A r205 10-32-UNF-2A 1N1581 1N22 R2050
Contextual Info: | Series 20 | 6KE3 iW ELECTRICAL C H A R A C T E R IST IC S: M axim um A ve ra ge Forw ard Current, Single Phase Half W a v e DC Rating at 126° C. Case Temperature . 16 amperes M axim um Surge Current one cycle of 60 C P S sine w ave . 200 amperes