1N1118 Search Results

jan1n12

Abstract: 1n1118r 1N1120R JANTX1N1202A 1N1124 N1206 1N1120
Contextual Info: rectifiers 24 JEDEC 10 Part Number A 1N607, R 1N607A, RA 1N608, R 1N608A, RA 1N609, RA 1N609A, RA 1N612, R 1N612A, RA 1N613, R 1N613A, RA 1N614, R 1N614A, RA 1N115, R 1N1118, R 1N1119, R 1N1120, R 1N1124, R 1N1124A, RA JAN1N1124A/104 1N1125, R 1N1125A, RA

1N1182

Abstract: diode 1N1188 1N1111 1N1130 1N1119 1N1184 1n1194 1N1118 1N1120 1N1124
Contextual Info: 3869720 G E N E R A L DIODE CORP 86D 00323 GENERAL DIODE CORP flb D T~ DE~ 3fiLT720 □□□□323 1 STUD MOUNTED SILICON POWER RECTIFIERS . . . cont’d i\\ \ l l\1 TYPE \ 1N1118 1N1124 ÍN1124A 400 500 600 200 200 1N1125 1N1125A ' 1N112S 1N1126A 1N1127

A15-0

Abstract: 1N1126A JAN 1N1131 1N1116 1N1119 1N1130 1N1115 1N1117 1N1118 1N1120
Contextual Info: SEHICON COMPONENTS INC 28E D • 6135157 000063c! 3 ■ STANDARD RECOVERY RECTIFIERS STUD BASE DO-4 lQ RATING TO 16 AMPS t rr TYPE TEMP CURRENT °C AMPERES TEMP PRV VOLTS VF V 1N1118 1N1119 100 200 300 400 500 .65A .65A .65A .65A .65A 150 150 150 150 150

Contextual Info: STANDARD RECOVERY RECTIFIERS STUD BASE DO-4 & DO-5 lQ RATING TO 60 AMPS FEATURES: DESCRIPTION • Hermetic Seal This is a series of general purpose rectifiers with average forward current ratings up to 60 Amps. They are for general purpose use in power supply and other rectification applications.

1N33A

Abstract: 1n250 diode 1N34* diode diode 1n34 1N254 1N255 "general diode corporation" 1N1117 1N339 1N348
Contextual Info: 3869720 G E N ER A L DIODE C O R P 860 00322 GENERAL DIODE CORP ñb D T'-Ö/'V/ D eT| 301^750 0000355 0 STUD MOUNTED SILICON POWER RECTIFIERS & TYPE \ IV \ \\ % 1N24S 1N248A, B 1N249 1N249A,B 1N250 DO-5 Do-5 Do-5 Do-5 Do-5 50 50 100 100 200 1N250A, B 1N253

1N2222A

Abstract: 1n2222 IN2071A 1N3934 1N3578 IN222 IN1342 IN5054 IN5053 1N3549
Contextual Info: xcmicron - _ SB._ 27E » • MäbTEMb 00005=17 MäbTEMb O OOOST? s em ic o n d u c to r s S e m itr o n ic s C o r p . IN T E X / S E M IT R O N IC S silicon rectifiers cont’d miniature axial lead silicon rectifiers T»» 1N3241 1N3242 1N3243 1N3244

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

1N3610

Abstract: 1N1118 1N2222 1N1502 1N1120 1N39 1N12068 HA 12058 1N1119 1N1227
Contextual Info: STANDARD RECOVERY RECTIFIERS STUD BASE DO-4 & DO-5 lQ RATING TO 60 AMPS FEATURES: DESCRIPTION • Hermetic Seal • High Temperature Operation • Metallurgical^ Bonded This is a series of general purpose rectifiers with average forward current ratings up to 60 Amps. They are for general purpose use in

1N3549

Abstract: 1N2482 IN2071 1N553 INI128 1N2070 1N3247 1N3245 1N33 1n256
Contextual Info: xemitran ffP IP P ftih v V P B M 5?E D • OOOOHT? fi semiconductors SemitronicsCorp. INTEX/ SEMITRONICS discrete devices CORP silicon rectifiers cont’d miniature axial lead silicon rectifiers DO-41 case style— t»m 1N3241 1N3242 1N3243 1N3244 1N3245 1N3246

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

1N1115

Abstract: 1N255 MR1121 1N1118 1N1540 1N254 1N1116 MR1120R 1N1117 1N611
Contextual Info: MR1 120 th ru MR1 126 SILICON MR1128 MR1130 Medium-current silicon rectifiers featurehigh surge current capacity, and low forward voltage drop. CASE 245 (DO-4) M A X IM U M R A T IN G S Rating Symbol MR MR MR MR MR MR MR MR MR 1120 1121 1122 1123 1124 1125 1126 1128 1130

1N1120

Abstract: 1N2484 1N342 1N2226
Contextual Info: - x _ S B . _ _ _ c m i c r o 2 7 E » MäbTEMb • M äb T EM b IN T E X / S E M IT R O N IC S silicon rectifiers cont’d miniature axial lead silicon rectifiers T »» 1N3241 1N3242 1N3243 1N3244 1N3245 600 800 ■ 1000 1200 1500

1N1373R

Abstract: 10191RA 1N600 1N1052 1N1059 3AF1 1N1056 1N1695 ZENER 18-2 5t HVC1800
Contextual Info: JEDEC TO SARKES TARZIAN RECTIFIER CROSS REFERENCE Jedec No. S. T. Type No. 1N248 1N248A 1N248B 1N248C 1N249 1N249A 1N249B 1N249C 1N250 1N250A 1N250B 1N250C ST3A10P ST410P ST410P ST410P ST3A10P ST410P ST410P ST420P ST3A20P ST420P ST420P ST420P 1N253 1N254 1N255

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any