1N4B Search Results

diode SG22

Abstract: 1N918 1N400 diode 1N5317 1N69B 1N919 1N849 1N673 1N688 1N4141
Contextual Info: 3869720 G E N E R A L D IO D E CORP 86D 0 0 3 3 8 GENERAL DIODE CORP flb T - D E l B û b T O D DD0D33fl 3 1 T àl-à7 SILIC O N D IO D ES . . . cont’d Case Style — DO-7 'il % 9& <h r« yi o ° o TYPE 1N4B2A 1N4S3 1N463A 1N464 1N4B4A Ç90 ïO cl 30 30

1N5A

Abstract: SVI 3003 ds2 lio board 98 UTA ING lg crt tv circuit diagram DC iris schematic IN58 bl in78 tv haeir 1N4002
Contextual Info: MIL-M-385I0/190C 22 October 1986 suPERstunrsMIL-M-38510/190B 10 July 1984 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, CMOS/ANALOG MULTIPLEXERS/DEMULTIPLEXERS WITH OVERVOLTAGE PROTECTION, MONOLITHIC SILICON, POSITIVE LOGIC This specification is approved for use by all Depart­

Contextual Info: AIR CORE INDUCTORS 空芯チップインダクタ（高Q/電流タイプ） Air-Core Chip Inductors High Q/High Current type •構造図 Construction 0402 W W L ② ● ● ● ● ● ● ● ● ● 移動体通信機器等の端末及び基地局の高周波回路及

Contextual Info: AIR CORE INDUCTORS 空芯チップインダクタ（高Q/電流タイプ） Air-Core Chip Inductors High Q/High Current type •構造図 Construction 0402 W W L ② ● ● ● ● ● ● ● ● ● 移動体通信機器等の端末及び基地局の高周波回路及

1N44H

Abstract: 1a5ah 1178H 1N60H 1171H 1A86H 0m02 1b7ah 19C1H 1N14H
Contextual Info: SONET/SDH Payload Extractor/Aligner SPECTRA-4x155 Production PM5316 SPECTRA 4x155 SONET/SDH Payload Extractor/Aligner 4 x 155 Mbit/s Datasheet Proprietary and Confidential Production Issue 4: March 2001 Proprietary and Confidential to PMC-Sierra, Inc. and for its customers’ internal use

"general diode corporation"

Abstract: SVM91 1n4501 SVM9010 1N1734 zener General Diode 1N1732 SV3207 1N1734 PR6210
Contextual Info: 3869720 GENERAL DIODE CORP -Ab 86D 00345 D E | 3 û h c] 7 2 D D 7W/-67 □00D34S ULTRA STABLE CERTIFIED VOLTAGE REFERENCES C ertified for observed voltage stab ility durin g 1000 hours o p eratio n . Each u n it serialized for positive identification,

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

1C65H

Abstract: 1a5ah
Contextual Info: :5 6: 55 AM SPECTRA 4x155 ASSP Telecom Standard Product Data Sheet Released m be r, 20 05 12 PM5316 es da y, 13 De ce SPECTRA 4x155 Data Sheet Released Issue No. 6: November 2005 Do wn lo ad ed by Co nt e nt Te a m of P ar tm in er In co n Tu SONET/SDH Payload Extractor/Aligner

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

Contextual Info: H1-506/507 2 HARRIS HI-506/507 Single 16/Differential 8 Channel CMOS Analog Multiplexers Features Description • Low On Resistance (T y p . .18011 • Wide Analog Signal R a n g e .±15V • TTL7CMOS Compatible . . . 2.4V (Logic “1”)

2u20 diode

Abstract: 2U39 diode 1N4C07 IN6016 IN4688 1N4C03 1N4C02 HRG1000 1N1989B 1N218
Contextual Info: CODI Semiconductor, Inc m PRODUCT CATALOG Serving the Industry for over 25 years. SILICON DIODES • • • • • • • Zener and avalanche regulator diodes Temperature compensated zener reference diodes Forward regulator diodes Low leakage diodes Voltage variable capacitors

IN3492

Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r
Contextual Info: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90

n5195

Abstract: JAN1N486B
Contextual Info: 1N483B thru 1N486B and 1N5194 thru 1N5196 M ierosemi Corp. 1 The óiode experts , 71 SMISTA A N A CA F o r m o re in fo rm a tio n cali: 714 979-8220 GENERAL PURPOSE SILICON DIODES FEATURES • • • • • V oidless h e rm e tic a lly s ea led glass p a c k ag e (DO-35).

IN3599

Abstract: 1N9168 1N4242 IN485 IN625 1N20S 1N4389 1N4243 in648 IN458a
Contextual Info: jomltron « • - _ SemitronicsCorp. ■ SS 481.1541= DD0DB05 3 ■ H iç rrp tp sem ico nd u c to r s IN T E X / SEMITRONICS CORP S7E D _ , , , / / / silicon diodes Reverse Current «A)150°C (See Notes) 5.0 SO 56 50 50 6.5 2.0 1.0 2.0 2.0 15 1.5

1n45b

Abstract: 1N48 diode T11G T26G IN283 T13G 1N849 DIODE 1N418 IN457A t20g
Contextual Info: 86D 0 0 3 3 5 _ 3 8 6 9 7 2 0 GENERAL DIO D E CORP GENERAL DIODE CORP fit ù 7 D DÎT| 3flfa17BG 0000335 fl J “ GERMANIUM DIODES Case Style — D0-7 TYPE \ \•% % 1N34 1N34A 1N38 1N38 1N3BA 75 75 36 125 125 1.0 1.0 1.0 1.0 1.0 1N38B 1N44 1N45

Contextual Info: 2: 03 PM SPECTRA 4x155 ASSP Telecom Standard Product Data Sheet Released m be r, 20 02 02 :4 PM5316 da y, 03 De ce SPECTRA 4x155 Data Sheet Released Issue No. 5: September 2002 Do wn lo ad ed by Pa rtM i ne rI nc of Pa rtm in er In co n Tu es SONET/SDH Payload Extractor/Aligner

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any

IN3599

Abstract: IN433A IN625 1N3068 1N218 1N4147 IN648 1N3069 1N3067 IN485
Contextual Info: « • - _ j o m lt r o n SemitronicsCorp. ■ 481.1541= DD0DB05 3 ■ H iç rrp tp S S sem ico nd u c to r s IN T E X / SEMITRONICS CORP S7E D _ , , , / / / - <DI V t silicon diodes Reverse Current «A)150°C (See Notes) 5.0 SO 56 50 50 6.5 2.0