1N5194 Search Results

DSAIH0002559

Contextual Info: DO-35 High Voltage I Current Use Advantages 1N5194 thru 1N5196 I Low Leakage Glass Diodes Used in applications where the highest voltage and current performance of small signal devices are required. In instrument applications for voltage isolation, pulse clipping and glue logic.

q292

Abstract: 100C 1N3595 1N3595-1 1N5194 1M3595-1 BKC International MIL-STD-202 METHOD 208 ir2150e
Contextual Info: B K C INTERNATIONAL 30E D • 117*Hfl3 D0G0350 1 « T ' 0 \ - 0 \ BKC IN TE RNATIONAL ELECTRONICS, INC. 6 LAKE STREET, LAWRENCE, M A 01841 TEL NO. 508 681-0392 EN GI N E E R I N G D A T A SHEET TYPE 1N5194 M E T A L L U R G I A L L Y BONDED, SI LICON PLANAR DIODE, DO UB LE PLUG CO NS TR UC TI ON

dc dc for CDI Circuit

Abstract: 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 DO-213AA LL34
Contextual Info: 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 • AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C

LL-35

Abstract: DO-213AA glass mini melf diode 1N5194 1N5194UR 1N5195 1N5196 1N5196UR
Contextual Info: 1N5194UR thru 1N5196UR LL-35 High Voltage / Current Use Advantages Low Leakage Glass Diodes Used in applications where the highest voltage and current performance of small signal devices are required. In instrument applications for voltage isolation, pulse clipping and glue logic.

BKC Semiconductors

Contextual Info: DO-35 High Voltage I Current Use Advantages 1 1N5194 thru 1N5196 Low Leakage Glass Diodes Used in applications where the highest voltage and current performance of small signal devices are required. In instrument applications for voltage isolation, pulse clipping and glue logic.

lN5401

Abstract: 4B20Y 4B10Y 4B40Y 1n4953 ln5400 E100S2 1N1088 PX4A01 1N3231
Contextual Info: SILICON RECTIFIERS, UNDER 1 kV Item Number Part Number 10 Max A VRRM IFSM (V) (A) Silicon Rectifiers, 10 1N5179 1N4512 1N415S 1N4953 BAT18 S218 5 1.0m 10m 100m 100m 100m 100m 10 15 BAQ33 BAQ34 1N458B 1N5194 OR50 BAQ35 BAY135 1N5195 1N519S OR25 ~:s120 20

1N5194

Contextual Info: FEATURES 1N5194 • • • • • 1N5194 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current, sine, 8.3mS:

IC 7447 A

Abstract: 7447 spec sheet JAN1N486B JAN-TX1N486B JANTX1N486B
Contextual Info: Standard Recovery Rectifiers Part Number 1N662 JAN1N662 1N663 JAN1N663 MT5102 MT5103 MT5100 MT5101 MT5139 1N483 1N483A MT5140 1N485 1N3595-1 1N3595US 1N3595US-1 JAN1N3595-1 JAN1N3595US-1 JANS1N3595-1 JANTX1N3595-1 JANTX1N3595U JANTXV1N3595JANTXV1N3595 1N5194

1N5194

Abstract: 1N5195 1N5196
Contextual Info: 1N5194 1N5195 1N5196 • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA

Contextual Info: 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 • AVAILABLE INJAN, JANTX AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C

1N5196

Abstract: 1N5194 JANTX 1N5194 1N5195
Contextual Info: 1N5194 1N5195 1N5196 • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA

diode 483b

Abstract: 483B BY100 JAN1N marking E 1n diode
Contextual Info: 1N483B thru 1N486B and 1N5194 thru 1N5196 Microsemi Corp. $ The diode e>perts SANTA ANA, CA j F o r m ore in fo rm a tio n call: / SCOTTSDALE, AZ 7I4 979-8220 GENERAL PURPOSE SILICON DIODES FEA TU R ES • • • • V o id le s s h e rm e tic a lly s e a le d g la s s p a c k a g e (DO-35).

n5195

Abstract: JAN1N486B
Contextual Info: 1N483B thru 1N486B and 1N5194 thru 1N5196 M ierosemi Corp. 1 The óiode experts , 71 SMISTA A N A CA F o r m o re in fo rm a tio n cali: 714 979-8220 GENERAL PURPOSE SILICON DIODES FEATURES • • • • • V oidless h e rm e tic a lly s ea led glass p a c k ag e (DO-35).

CDLL5195

Abstract: CDLL5196 DO-213AA LL34 1N5194UR 1N5195UR 1N5196UR CDLL5194
Contextual Info: 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 • AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N4868

Abstract: 1N233 zener diode 1N429 1N239 1N471 IN753 IN4858 IN4868 diode JAN1N486B 1N47A
Contextual Info: Zener Volt age Zener Type No. 3t 1ZT @ mA Volts S u f f ix A 0 .2 0 MICROSEMI Zener Voltage Tolerance Max. Zener Impedance @ Ur Ohms Power Rating Device Package 150m w C a s e A 8 1 N 2 2 5 ÎD 1N 2 2 6 il ) 1 N 2 2 7 (1 ) 7 .5 • 1 0 .0 9 .0 • 1 2 .0

cczl

Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
Contextual Info: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL

Contextual Info: SWITCHING DIODES 200mW Part# Peak Voltage Continous Reverse Current VI B V 1N914 1N914A 1N914B I r <"A> 100 100 100 @ Forward Voltage VR (V) 5000 @ 5000 @ 5000 @ Capacitance C Maximum Reverse Recovery Time VF (V) @ lF (mA) <PF) V (n S ) 1.0 1.0 1.0 @ @ @

AMERICAN POWER DEVICES 1n914

Abstract: 1N5209 1N3064 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N619
Contextual Info: 3541563 FENWAL 83D 00920 E L E C T R O N I C S / APP DE ^ 3 S m S b 3 03 ODQD^BO D I 7 - -j . PLANAR DIODES DO-35 Case Type Peak Inverte Voltage Minimum Forward Current Maximum Capacitance Maximum Reverse Current @ 25*C lr /tA @150*C lr mA ~V T~ V

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

DIODE 1N649

Abstract: 1n41481 zener diode diode 1N645 1N4148-1 JAN 1N5619 JAN 1N270 JAN diode 1n4454
Contextual Info: M ilitary Q ualifications Q u a l i f i e d Par ts Part Number Qual Level Page Part Number Qual Level Page 1N270 JAN, JAN TX, JAN TX V 32 1N4454/1N4454-1 JAN, JA N TX , JA N TX V 11 1N276 JAN, JAN TX, JAN TX V 32 1N 4464 thru 1N4496 JAN, JA N TX , JA N TX V

1N626

Abstract: 1N658 DSAIH000251 1N661
Contextual Info: K C • IN T E R N A T IO N A L BKC 2000 Series 30E * D ■ 1171163 Max avg Rectified Current l0 (l0 ) Max Power Disslpation-(PQ) Forward Voltage Drop (VF) Volts mA mW Volts mA BA170 BAV17 BAV18 1N251 1N461A 1N462A 1N626 1N627 1N658 1N659 1N660 20 25 60

in5242

Abstract: 1N5102 in5227 in5239 IN5228 IN5240 MZ240 IN5238 1N5104 IN5226
Contextual Info: Zener Voltage at I zt Volts @ mA Zener Type No. Max. Zener Impedance @ I zt Ohms Zener Voltage Tolerance Power Rating 3 w att " " 1 N 51 02 1 N 51 03 1 N 51 04 180.0 190.0 200.0 4.0 8 50 .0 900.0 950.0 ±5% 1 N 51 05 1 N 51 06 1 N 51 07 220.0 240.0 260.0 3.0