1N482B Search Results

Contextual Info: DIGITRON SEMICONDUCTORS 1N482B – 1N486B LOW LEAKAGE RECTIFIER MAXIMUM RATINGS Symbol Value Unit Average forward rectified current @ TA = 25°C Rating IAV 0.65 A Maximum non-repetitive surge 8.3ms ½ sine IFSM 2.0 A Junction temperature range TJ -65 to +200

1N482B

Abstract: LL-35 1N4150 1N483B 1N484B 1N485B 1N486B
Contextual Info: High Conductance Use Advantages 1N482B thru 1N4150 1N486B DO-35 Diodes Used as a general purpose diode in power supplies, or in clipping and steering applications. Operation at temperatures up to 200 degrees C, no derating. Can be used in harsh environments where hermeticity and low cost are

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

FDS01503

Abstract: FDS01403 1n457a equivalent 1n625 equivalent FDS01502 1N457A J 1N3070 equivalent FDS01401 FDS01501 1N459 equivalent
Contextual Info: This Material National Semiconductor Surface Mount Diodes <S> m 2 t-i General Purpose & Specialty Diodes O Device Description Pkg. No. Pin Out Bv V Min •r (nA) @ Max Vr V Vf <V> Max If mA mA C PF Max to­ ns Max Test Cond. FDS01000 FAMILY Proc. Family

FDS01201

Abstract: FDS04148 FDS01203 FSD01200 FDS01503 FDS01501 1N459 equivalent FDS01202 1N627 FDS01703
Contextual Info: £ 3 National Semiconductor Surface Mount Diodes S> m 3: n O O General Purpose & Specialty Diodes PLASTIC PACKAGE Description Pkg. No. Pin Out By (V Min - I I Device Vr V Vp (V> Max 1000 75 0.715 1.0 0.855 10.0 1.1 50.0 1.3 100.0 1.0 100 See BAS 16 See BAS 16

1N626

Abstract: 1N658 DSAIH000251 1N661
Contextual Info: K C • IN T E R N A T IO N A L BKC 2000 Series 30E * D ■ 1171163 Max avg Rectified Current l0 (l0 ) Max Power Disslpation-(PQ) Forward Voltage Drop (VF) Volts mA mW Volts mA BA170 BAV17 BAV18 1N251 1N461A 1N462A 1N626 1N627 1N658 1N659 1N660 20 25 60

EM 5135 diode

Abstract: 458a diode IN461A 1N459 equivalent T219 pn5139 pn5135 FDSOI500 equivalent diode for 1n457 0/EM 5135 diode
Contextual Info: FAIRCHILD SEMICO NDU CTO R 04 DE |34fc.citi74 0 0 H 7 4 S CI 4 3469674 FAIRCHILD SEMICONDUCTOR 84D 2 74 59 D PN5135/FTS05135 T - 2 7 - u PN5136/FTS05136 PN5137/FTS05137 FAIRCHILD A S c h lu m b e rg e r C o m p a n y NPN Small Signal General Purpose Amplifiers

equivalent diode for 1n457

Abstract: IN461A IN484B 1N4848 458a diode in462a PN5142 in485b PN5139 PN5135
Contextual Info: FAIRCHILD SEMICO NDU CTO R 3469674 04 F A IR C H IL D DE |34fc.citi74 0 0 H 7 4 S CI 4 SEM ICO NDU CTOR 84D 27459 D PN5135/FTS05135 T - 2 7 - u PN5136/FTS05136 PN5137/FTS05137 FAIRCHILD A S c h lu m b e rg e r C o m p a n y NPN Small Signal General Purpose

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

Germanium diode

Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
Contextual Info: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes

FD700 "cross-reference"

Abstract: ba479 datasheets diode 1n4009 1N4146 1N458 "cross reference" BAS34 1N459 equivalent 1N3064 1N4009 1N4152
Contextual Info: Switching Diodes Part No. CrossReference Operating Temperature: -65oC to 150o C Power Dissipation Max. Avg. Rect. Current Peak Voltage Continuous Rev. Current Forward Voltage Max. Reverse Recovery Time Package Bulk/Reel P d mW Io(mA) V R R M(V) IR(nA)@V R (v)

1n9148

Abstract: D035 1N483A Diode d07-15 1n461 by 1N456A IN662A 1N484 J 1N456 1N457
Contextual Info: ssm m t QQD03S2 ' ' 2514 096 CR IMS ON S E M I C O N D U C T O R INC , ; " 990 0 03 5 2 D ’ 7~- 6 i - O f SILICON DIODES r ît Typ# Case Min. Forward P.I.V. Currant Volts at I V Ravarsa Currant at 25% Ra* vana Volt*3« //A mA Maximum Ravtrsa Currant at Tamp.

FD333

Abstract: JAN1N486B FJT1100
Contextual Info: DIODES LOW LEAKAGE DIODES BY DESCENDING BV GLASS PACKAGE By c Vr VOLTS VF @ VOLTS MAX @ 50 @ @ If mA 225 1.1 @ 100 DO-7 250 25 @ 225 1.0 @ 100 DO-7 1N486B 250 50 @ 225 1.0 @ 100 DO-7 1N486B JAN 250 25 @ 225 1.0 100 DO-7 1N486B JAN TX 250 25 @ 225 1.0 @ @

1N626

Abstract: BA170 1N458 1N461A hep silicon diode 1N251 1N462A 1N627 BAV17 BAV18
Contextual Info: 0 K C INTERNATIONAL • 30E D ■ 1171163 0000302 1 ■ " p BKC 2000 Series * General Purpose Silicon Diodes in DO-35 Package ■ ■ ■ ■ P eak Inverse VoHage PIV Max avg Rectified Current (l0 ) (l0 ) Max Power Disslpation-(PQ) Forward Voltage Drop (VF)

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

1n52408

Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
Contextual Info: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

TIS43

Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Contextual Info: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.

MD4148

Abstract: MD5614 MD5615 1N5614 MSC 1n3600 die 1N5550-1N5553 1N4001 microsemi 1N3595 MSC md4007 MD56-2
Contextual Info: GENERAL PARAMETER RESTRICTIONS FOR 100% DICE TEST: U nm ounted dice d o n o t have the pow er ratings o f packaged devices, therefore test conditions as well as ratings m ay need to be reduced or sam pled in packaged form as described below: V p = 200 m A m axim um . A ccuracy variable above 50 m A , highly contact dependent.*

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

Contextual Info: Low Leakage Diodes Part No. Diodes Max. Reverse Current @ VR Max. Forward Voltage Drop @ IF Peak Reverse Voltage Max. Reverse Recovery Time Max. Diode Capacitance @0V CT Package VRRM VF IF IR VR Trr V 25 40 60 60 60 125 (ns) - Bulk/Reel 6 8 6 6 1000/ 10000

FAIRCHILD 1N459A

Abstract: do-35 1N4009 1N459a 1N459 1N485B 1N486B 1N625 FDH300 FDH666
Contextual Info: FAIRCHILD DIODES DIODES COMPUTER DIODES BY ASCENDING t rr (Cont’d) GLASS PACKAGE Item DEVICE NO. *rr ns Max BV V Min 1 FDH666 4.0 40 'F mA C pF Max Package No. 1.0 100 3.5 DO-35 4.0 • DO-35 4.0 DO-35 — DO-35 5.0 DO-35 Vr V vF V Max 100 25 |r nA Max