IN483
Abstract: IN485 IN483B 1N483B 1N485B 1N486B IN485B IN486B
Contextual Info: 1N483B 1N485B 1N486B • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS 0.085/0.125 2.16/3.18 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C
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1n483b1n485b1n486bmil-prf-19500/118+6100main483in485in483bin485bin486b
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IN485B
Abstract: IN486B IN485 IN483B 1N483B 1N485B 1N486B
Contextual Info: 1N483B 1N485B 1N486B • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS 0.085/0.125 2.16/3.18 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C
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1n483b1n485b1n486bmil-prf-19500/118+5100main485bin486bin485in483b
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IN3599
Abstract: 1N9168 1N4242 IN485 IN625 1N20S 1N4389 1N4243 in648 IN458a
Contextual Info: jomltron « • - _ SemitronicsCorp. ■ SS 481.1541= DD0DB05 3 ■ H iç rrp tp sem ico nd u c to r s IN T E X / SEMITRONICS CORP S7E D _ , , , / / / silicon diodes Reverse Current «A)150°C (See Notes) 5.0 SO 56 50 50 6.5 2.0 1.0 2.0 2.0 15 1.5
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1n194a1n1951k2001n201+16jn202in48291n4j30mp035mpd302mpb401in35991n91681n4242in485in6251n20s1n43891n4243in648in458a
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IN3599
Abstract: IN433A IN625 1N3068 1N218 1N4147 IN648 1N3069 1N3067 IN485
Contextual Info: « • - _ j o m lt r o n SemitronicsCorp. ■ 481.1541= DD0DB05 3 ■ H iç rrp tp S S sem ico nd u c to r s IN T E X / SEMITRONICS CORP S7E D _ , , , / / / - <DI V t silicon diodes Reverse Current «A)150°C (See Notes) 5.0 SO 56 50 50 6.5 2.0
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dd0db05in3599in433ain625+71n30681n2181n4147in6481n30691n3067in485
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