1N486 Search Results

Contextual Info: DIGITRON SEMICONDUCTORS 1N482B – 1N486B LOW LEAKAGE RECTIFIER MAXIMUM RATINGS Symbol Value Unit Average forward rectified current @ TA = 25°C Rating IAV 0.65 A Maximum non-repetitive surge 8.3ms ½ sine IFSM 2.0 A Junction temperature range TJ -65 to +200

Low Leakage Diode

Abstract: 1N486B
Contextual Info: 1N486B General Description: A General Purpose, Low Leakage Diode in the DO-35 package. These diodes couple very low reverse leakage current with high forward conduction and high reverse blocking voltage. General Purpose Low Leakage Diode This product is light sensitive, any damage to the body coating

1n4864

Contextual Info: Silicon Switching Diode 1N4864 0-35 Glass Package Applications Used in general purpose applications,where a low current controlled forward characteristic and fast switching speed are important. Features ► Six sigma quality ► Metallurgical^ bonded ► BKC's Sigma Bond plating

1N486B

Contextual Info: 1N486B 1N486B DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units Maximum Repetitive Reverse Voltage 250 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg Non-repetitive Peak Forward Surge Current

1N485B

Abstract: 1N486B
Contextual Info: 1N485B 1N486B Central Semiconductor Corp. central Semiconductor Corp. +1 SILICON DIODE JEDEC DO-35 CASE 1 4 5 Adams Avenue Hauppauge, New York 11 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR 1N485B, 1N486B types are silicon planar diodes designed for low leakage applications.

MMBD1502A

Abstract: 1N914 SOT-23 T0236 FOH300 MMBD1402 1n4148 LL34 1N3070 FOH300A 1N485B 1N486B
Contextual Info: hot a m bSDHBD D03TS07 423 NATL VRRM Irrm Volts Min Device 250 1N486B BAV21 1N3070 1N459 1N459A 1N485B 1N4938 1S923 BAS21 BAV20 FDH400 MMBD1401 MMBD1402 MMBD1403 MMBD1404 MMBD1405 MMBD1501A MMBD1502A MMBD1503A MMBD1504A MMBD1505A 1N3595 1N458A 1N6099 200

Contextual Info: 1N486B 1N486B DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units Maximum Repetitive Reverse Voltage 250 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg Non-repetitive Peak Forward Surge Current

1N483B

Abstract: 1N486B JANTX 1N486B D0204MB
Contextual Info: GENL IN S TR / 3ÖE POWER D • 3ÔT0137 QQOMMÔS ^ 1N483B THRU 1N486B LOW POWER MINIATURE GLASS PASSIVATED JUNCTION RECTIFIER Voltage - 70 to 225 Volts Current - 200 Milliamperes FEATURES D 0-204M B .023 0.61. .018(9.» LO (25.4 KIR. C7.6) ITS) HO(25.4)

1n4948 Silicon Instrument

Abstract: byw76 diodes RG3A General instrument 1n4948 byw76
Contextual Info: FAMILIES OF GENERAL INSTRUMENT GLASS PASSIVATED RECTIFIERS Glass Passivated Silicon Diodes 0.2 to 0.4 AMPERES Types: Features: 1N483B thru 1N486B 1N645 thru 1N649 ♦ ♦ ♦ ♦ ♦ ♦ ♦ High Temperature Metallurgically Bonded High Efficiency and Rectification Radio

1N486A

Abstract: 1N486B
Contextual Info: FEATURES 1N486B • • • • • • 1N486B AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION ALSO AVAILABLE AS 1N486A MAXIMUM RATINGS AT 25 °C Operating Temperature:

LN4863

Abstract: 1N4863 lN4864
Contextual Info: 1N4863 1N486¿t +1 Central Semiconductor Corp. Central Semiconductor Corp. SILICON SWITCHING DIODE JEDEC DO-35 CASE 1 4 5 A dam s Avenue Hauppauge, New Y ork 11 7 8 8 DESCRIPTION The Central Semiconductor 1N 4 8 6 3 , 1N4864 Silicon Planar Epitaxial Diodes are characterized

FD333

Abstract: JAN1N486B FJT1100
Contextual Info: DIODES LOW LEAKAGE DIODES BY DESCENDING BV GLASS PACKAGE By c Vr VOLTS VF @ VOLTS MAX @ 50 @ @ If mA 225 1.1 @ 100 DO-7 250 25 @ 225 1.0 @ 100 DO-7 1N486B 250 50 @ 225 1.0 @ 100 DO-7 1N486B JAN 250 25 @ 225 1.0 100 DO-7 1N486B JAN TX 250 25 @ 225 1.0 @ @

Switching

Abstract: 1N3065 1n914 equivalent 1N3605 1N4151 equivalent 1N3062 1N4153 silicon diodes 1N4863 datasheets diode 1n3064 1N3063
Contextual Info: Silicon Diodes DO-35 Case Switching Diodes TYPE NO. 1N914 1N914B 1N3062 1N3063 1N3064 1N3065 1N3600 1N3604 1N3605 1N4148 1N4150 1N4151 1N4152 1N4153 1N4154 1N4444 1N4446 1N4447 1N4448 1N4449 1N4454 1N4863 1N4864 VRRM V MAX 100 100 75 75 75 75 50 40 75 100

JAN1N486B

Abstract: JANTX 1N483B JAN-TX1N483B
Contextual Info: POWER SEMICONDUCTOR DIVISION iNstim JAN AND JANTX 1N483B THRU 1N486B LOW POWER MINIATURE GLASS PASSIVATED SILICON DIODES VOLTAGE 70 to 225 Volts CURRENT 200 Milliamperes - - T FEATURES 1.50 38.1 1 .0 0(25.4) Î .300 (7.6) .125(3.18) DIft .085 (2.1G) 1.50

IN483

Abstract: IN485 IN483B 1N483B 1N485B 1N486B IN485B IN486B
Contextual Info: 1N483B 1N485B 1N486B • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS 0.085/0.125 2.16/3.18 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C

1N482B

Abstract: LL-35 1N4150 1N483B 1N484B 1N485B 1N486B
Contextual Info: High Conductance Use Advantages 1N482B thru 1N4150 1N486B DO-35 Diodes Used as a general purpose diode in power supplies, or in clipping and steering applications. Operation at temperatures up to 200 degrees C, no derating. Can be used in harsh environments where hermeticity and low cost are

IN5225

Abstract: 1N486B DO-35 PACKAGE liner marking code
Contextual Info: 1N486B General Description: A General Purpose, Low Leakage Diode in the DO-35 package. These diodes couple very low reverse leakage current with high forward conduction and high reverse blocking voltage. General Purpose Low Leakage Diode This product is light sensitive, any damage to the body coating

diode 483b

Abstract: 483B BY100 JAN1N marking E 1n diode
Contextual Info: 1N483B thru 1N486B and 1N5194 thru 1N5196 Microsemi Corp. $ The diode e>perts SANTA ANA, CA j F o r m ore in fo rm a tio n call: / SCOTTSDALE, AZ 7I4 979-8220 GENERAL PURPOSE SILICON DIODES FEA TU R ES • • • • V o id le s s h e rm e tic a lly s e a le d g la s s p a c k a g e (DO-35).

IN485B

Abstract: IN486B IN485 IN483B 1N483B 1N485B 1N486B
Contextual Info: 1N483B 1N485B 1N486B • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS 0.085/0.125 2.16/3.18 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C

n5195

Abstract: JAN1N486B
Contextual Info: 1N483B thru 1N486B and 1N5194 thru 1N5196 M ierosemi Corp. 1 The óiode experts , 71 SMISTA A N A CA F o r m o re in fo rm a tio n cali: 714 979-8220 GENERAL PURPOSE SILICON DIODES FEATURES • • • • • V oidless h e rm e tic a lly s ea led glass p a c k ag e (DO-35).

Contextual Info: 1N483B THRU 1N486B LOW POWER MINIATURE GLASS PASSIVATED SILICON RECTIFIER Voltage - 70 to 225 Volts Current 200 Milliamperes - FEATURES High temperature metallurgically bonded con­ structed rectifiers 0.2 Ampere oper^ ation at Ta = 25*C with no thermal runaway

1N4868

Abstract: lt 8220 1N483B1 1N4858 1N5194 JAN1N486B N5194 1N483B 1N485B 1N486B
Contextual Info: 1N483B-1N486B 1N51I94-1N5196 «¡erosemi Corp. GENERAL PURPOSE SILICON DIODES FEATURES • • • • Voidless hermetically sealed glass package. Triple layer passivation. Metallurgically bonded. TX types available per MIL-S-19500/118C. ABSOLUTE M A XIM U M RATING S

RG3G

Abstract: D0204AP 1N647 RG3A D0-204AP 1N5559
Contextual Info: QUICK GUIDE TO GLASS PASSIVATED RECTIFIERS TYPE 1N483B thru 1N486B 1N645 thru 1N649 1N4245 thru 1N4249 1N4942* thru 1N4948' 1N5059 thru 1N5062 1N5614 thru 1N5622 CASE D0204MB DO204MB D0204AP D0204AP D0204AP D0204AP le A 02 04 1.0 10 1.0 1.0 1.0 1.0 1.0 I» (A)

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.