1N645 Search Results

1n645

Abstract: 1N649 1n646 1n648
Contextual Info: TYPES 1N645 THRU 1N649, 1N645A SILICON GENERAL PURPOSE DIODES B U L L E T IN N O . D L -S 7 3 9 1 2 5 , O C T O B E R 1 9 6 6 - R E V IS E D M A R C H 1 9 7 3 225 V to 600 V • 400 m A A V E R A G E • Rugged Double-Plug Construction m echa nica l d a ta

Contextual Info: DIGITRON SEMICONDUCTORS 1N645-1N649 SILICON RECTFIER DIODES Available Non-RoHS standard or RoHS compliant (add PBF suffix) Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number MAXIMUM RATINGS

Contextual Info: Silicon Rectifier Diodes E 1N645-1 thru 1N649-1 Use Advantages DO-35 Glass Package Used as a general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not permit use of power rectifiers.

JTX 1N649-1

Abstract: DSAIH00025213 1n646
Contextual Info: Silicon Rectifier Diodes Use Advantages n 1N645-1 thru 1N649-1 DO-35 Glass Package Used as a general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not permit use of power rectifiers.

DO-35 silicon Rectifier diodes

Abstract: 1N649-1 1N647 1N648 1N649 DO-213AA 1N645 1N645-1 1N646 Purpose Rectifier Melf
Contextual Info: Silicon Rectifier Diodes Use Advantages DO-35 Glass Package 1N645 to 649 or 1N645-1 to 649-1 Used as a general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not

Contextual Info: JA N 1N645-1 thru JA N 1N649-1 M ierosemi Corp. f The d io a e e x p e r ts SANTA A N A, CA SC O TTSD A LE. A Z ☆JAN S* F o r m ore in fo rm a tio n call: 714 9 7 9-8220 FEA TU R ES MILITARY RECTIFIERS • MICROMINIATURE PACKAGE • VOIDLESS HERMETICALLY SEALED GLASS PACKAGE

Contextual Info: 1N645UR-1 CDLL645 • AVAILABLE INJAN, JANTX AND JANTXV PER MIL-PRF-19500/240 • SILICON RECTIFIER • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 400 mA @ 25ºC

Contextual Info: 1N645+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current400m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage225 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.15 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

Contextual Info: 1N645B Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current400m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage225 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition).40 @Temp. (øC) (Test Condition)

IN649

Abstract: BES100 bes1101 1n5615 do35 1N5805 DSAIH0002566 BES1104 HA2020
Contextual Info: R ectifiers 1N645 Series • 40 0m A Rectifiers in DO-35 Package 1 M axim um A verag e R ectified C urrent P eak inve rse V olta ge M IN . (P fV ) B re akd ow n V oltage (M IN .) @ 100 |iA (B v ) ('o' Co) 25" C 150" C Forw ard V oltage Drop (V F) @ l F 4 00 m A

1n4948 Silicon Instrument

Abstract: byw76 diodes RG3A General instrument 1n4948 byw76
Contextual Info: FAMILIES OF GENERAL INSTRUMENT GLASS PASSIVATED RECTIFIERS Glass Passivated Silicon Diodes 0.2 to 0.4 AMPERES Types: Features: 1N483B thru 1N486B 1N645 thru 1N649 ♦ ♦ ♦ ♦ ♦ ♦ ♦ High Temperature Metallurgically Bonded High Efficiency and Rectification Radio

Contextual Info: LL645-1 thru LL649-1 Silicon Rectifier Diodes Use Advantages E DO-213AA MELF SMD 1N645 1 647 / 649UR-1 MIL types Used as a small footprint surface mount general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not

diode 1N645

Abstract: 1N34 DIODE 1N270 diode 1N34 diodes germanium diode 1N60 1N34
Contextual Info: 3 6 6 ,7 2 0 GENER.L DIODE CORP 3 8 tT O D D00 0 3 t a fl f - <^£micorzclucéoi± _ T e le x 948318 100 Eqmes Street (617 872-7520 Framingham, Massachusetts 01701 Low Current Diodes (DO-7) V RM (r e p ) V o lta V o lt ' GDC645 150 1N645 Type No. I0

Contextual Info: I n ter n a tio n a l 1N645 thru 1N649 S e m ic o n d u c to r , I n c . GLASS PASSIVATED SILICON RECTIFIER VOLTAGE - 225 to 600 Volts FEATURES CURRENT - 400 Milliamperes MECHANICAL DATA • High te m p e r a tu re m e t a l lu r g ic a l^ bonded co m p re s s io n con tacts

Contextual Info: 1N645-1+JANTX Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current400m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage225 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.5.0 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)400m @Temp. (øC) (Test Condition)25

Contextual Info: 1N645-1+JANS Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current400m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage225 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.5.0 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)400m @Temp. (øC) (Test Condition)25

1N6459

Abstract: 1N6460 EE-165
Contextual Info: Schottky PowerMod 1N6459 - 1N6460 - A - I- B - CD Dim. Inches | •$- CD ii J -m |_ Br - - F - - Baseplate Common Cathode 1/4-20UNC with Captive Lockwasher P2cq P2CQ I —1 -1 -1.350 0.700

Contextual Info: FEATURES 1N645- 1 • • • • • 1N645-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/240 SILICON RECTIFIER METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature:

1N645UR-1

Abstract: CDLL645 DO-213AA LL645
Contextual Info: FEATURES 1N645UR-1 • 1N645UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • • 19500/240 SILICON RECTIFIER METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION ALSO AVAILABLE AS LL645, CDLL645, & MLL645 MAXIMUM RATINGS AT 25 °C

1N649-1

Abstract: 1N645-1 1N647-1 1N645-1 JAN N647
Contextual Info: 1N645-1 thru 1N649-1 ITTIH ÎM Microsemi Corp. FEATURES • • • • • • • MILITARY RECTIFIERS Microm iniature package. Voidless herm etically sealed glass package. Triple layer passivation. M etallurgically bonded. Standard recovery. PIV to 6 0 0 volts.

marking D9

Abstract: DO-35 BLUE CATHODE 100C 1N645 BKC International
Contextual Info: BKC INTERNATIONAL 30E P • 1 1 7 n ñ 3 GDG03bô T ■ ¡ '“ p g i-Q C BKC INTERNATIONAL ELECTRONICS, INC. 6 LAKE STREET LAWRENCE , M A . 01841 DATA SHEET fo r 1N645 D O - 3 5 ) ABSOLUTE MAXIMUM RATING: SYMBOL VRM Io IFSM Po Tj TA PARAMETER REVERSE WORKING VOLTAGE

1n647

Abstract: 1N647-1
Contextual Info: M IC R OS EN I CORP/ ÜIATERTOIÜN SÜE R F O T IF IF R Ç I .“ *" High Voltage, Low Current D m 00123S5 =1133 • U N I T 1N645, 1N647; JAN, JANTX 1N645, 1N647 JAN, JANTX & JANTXV 1N645-1, 1N647-1 . FEATURES • Metallurgical Bond • Qualified to MIL-S-19500/240

Contextual Info: 1N645-1+JANTXV Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current400m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage225 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.5.0 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)400m @Temp. (øC) (Test Condition)25

Contextual Info: FEATURES 1N645-1 0.018' 0.46nn 0.0 2 2 ' •nr • 1N645-1 • • S il ic o n R e c t if ie r M e t a l l u r g ic a l l y B o n d e d • H e r m e t ic a l l y S e a l e d 0.56nn M a x im u m R a t in g s 1.00' 1.50' 25.4 m - 38.1nm - 0.180' 7 4.57nn at