RG3A Search Results

general instrument

Contextual Info: RG3A THRU RG3M GLASS PASSIVATED FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes FEATURES ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Hermetically sealed package

RG3G

Abstract: RG3D DO204AP
Contextual Info: RG3A THRU RG3M Glass Passivated Fast Switching Rectifier • High temperature metallurgically bonded construction • Hermetically sealed package • Cavity-free glass passivated junction • 3.0 ampere operation at TA=55°C with no thermal runaway • Typical IR less than 0.1µA

RG3G

Contextual Info: RG3A / B / D / G / J / K / M VISHAY Vishay Semiconductors Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Hermetically sealed package • Cavity-free glass passivated junction • 3.0 ampere operation at Tamb = 55 °C with no thermal runaway

rg3g

Contextual Info: RG3A THRU RG3M GLASS PASSIVATED FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes * FEATURES ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Hermetically sealed package

RG3M

Abstract: RG3G
Contextual Info: RG3A thru RG3M Vishay Semiconductors formerly General Semiconductor Glass Passivated Fast Switching Rectifier Case Style G3 1.0 25.4 MIN *Features d e t n e t a P Reverse Voltage 50 to 1000V Forward Current 3.0A • High temperature metallurgically bonded construction

DIODE RG3j

Abstract: RG3D RG3M DIODE RG3D
Contextual Info: RG3A to RG3M VISHAY Vishay Semiconductors Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Hermetically sealed package • Cavity-free glass passivated junction • 3.0 ampere operation at Tamb = 55 °C with no thermal runaway

RG3D

Contextual Info: RG3A THRU RG3M GLASS PASSIVATED FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes * FEATURES ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Hermetically sealed package

g3 diode

Abstract: DIODE RG3j RG3j RG3K RG3A
Contextual Info: RG3A / B / D / G / J / K / M VISHAY Vishay Semiconductors Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Hermetically sealed package • Cavity-free glass passivated junction • 3.0 ampere operation at Tamb = 55 °C with no thermal runaway

Contextual Info: RG3A THRU RG3M GLASS PASSIVATED FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 3 .0 Amperes FEATURES ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Hermetically sealed package

DIODE RG3j

Abstract: DIODE RG3k RG3G
Contextual Info: RG3A / B / D / G / J / K / M VISHAY Vishay Semiconductors Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Hermetically sealed package • Cavity-free glass passivated junction • 3.0 ampere operation at Tamb = 55 °C with no thermal runaway

BYW56V

Abstract: BYW56 v BYW56 BY228 by228 v DO-204AP VISHAY MARKING vishay rectifiers marking G3 marking G4
Contextual Info: VISHAY Vishay Semiconductors Marking on Rectifiers V BYW56 V BY228 17208 17207 SOD57 SOD64 Figure 1. V Figure 3. V RG1A 17217 DO-204AP G1 Figure 2. Document Number 84085 Rev. 7, 07-Jan-03 RG3A 17218 G3 Figure 4. www.vishay.com 1 VISHAY Vishay Semiconductors

Contextual Info: RG3A THRU RG3M FAST SWITCHING GLASS PASSIVATED SILICON RECTIFIER Voltage - 50 to 1000 Volts Current - 3.0 Amperes FEATURES ♦ High temperature metallurgical^ bonded constructed rectifiers ♦ Glass passivated cavity-free junction ♦ Hermetically sealed package

RG3u

Abstract: rg3g
Contextual Info: RG3A THRU RG3M GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER Voltage - 50 to 1000 Volts Current - 3 . 0 Amperes FEATURES ♦ High temperature metallurgically bonded constructed rectifiers ♦ Glass passivated cavity-free junction ♦ Hermetically sealed package

RG3G

Contextual Info: RG3A THRU RG3M GLASS PASSIVATED FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes FEATURES ♦ High temperature metalfurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Hermetically sealed package

BYD74G

Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
Contextual Info: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

byv260

Abstract: W10G MBRB1060 SBLB2030CT SBLB2040CT ug2d 1N8478 KBU8M 514
Contextual Info: NUMERICAL INDEX 1.5KA6.8 thru 1.5KA43A.614 BYM12-50 thru BYM12-400 .77 FES8AT thru FES8JT . 149 1.5KE6.8 thru 1.5KE440CA.564 BYM13-20 thru BYM13-60 .355 BYV260 and BYV26E. 75

5SBA20

Abstract: ZENER b29 B2950 BRF20100C BZY97C11 BRF20100CT BC337 B2060CT BRF1060 General Semiconductor 1N4249
Contextual Info: ALPHANUMERICAL LIST OF ALL GENERAL SEMICONDUCTOR TYPES Note: Listed below are General Sem iconductor's part num bers, along with the Data Book in w hich they appear. For Zener and T V S page references, see the Zener/TVS Device Index on page 5 in th is book.

g1758

Abstract: BYV27-200 byw32-200 G30D GP25M
Contextual Info: v G eneral S e m ic o n d u c t o r DEVICE NUMERICAL INDEX PAGE DEVICE PAGE DEVICE PAGE 1.5KA6.8 thru 1.5KA43, A . 52 BA157GP thru B A 1 5 9 G P . 18 EGL34A thru EGL34G . 28 1.5KE6.8 thru 1.5KE440, A, CA . 53