1N626 Search Results

smd marking sb

Abstract: 1N6263W marking SB
Contextual Info: Diodes SMD Type SMALL SIGNAL DIODES 1N6263W SOD-123 Unit: mm 2.7 +0.05 1.1-0.05 +0.1 0.55-0.1 +0.1 -0.1 +0.1 1.6-0.1 Features Low Forward Voltage Drop +0.1 3.7-0.1 Guard Ring Constuction for Transient Protection Fast Switching Time 0.50 0.1max 0.35 +0.05 0.1-0.02

Contextual Info: I n ter n a tio n a l 1N6263 S e m ic o n d u c to r , I n c . SCHOTTKY BARRIER DIODES 1 :o FEATURES H erm etically Sealed M e ta lu rg ic a lly Bonded D ouble Plug C onstruction .0 6 8 /.0 7 3 1 .7 3 /1 .9 3 1.00 2 5 .4 M in MAXIMUM RATINGS O p e ra tin g T em p e ra tu re :

Contextual Info: Product specification 1N6263W SOD-123 Unit: mm 2.7 +0.05 1.1-0.05 +0.1 0.55-0.1 +0.1 -0.1 +0.1 1.6-0.1 Features Low Forward Voltage Drop +0.1 3.7-0.1 Guard Ring Constuction for Transient Protection Fast Switching Time 0.50 0.1max 0.35 +0.05 0.1-0.02 Low Reverse Capacitance

1N6277

Contextual Info: DIGITRON SEMICONDUCTORS 1N6267-1N6303A UNIDIRECTIONAL AND BIDRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS FEATURES • • • • • • Available in both Unidirectional and Bidirectional add C or CA suffix for bidirectional Voltages from 6.8 to 180 V Breakdown (VBR)

Contextual Info: 1N6267 thru 1N6303A 1.5KE6.8 thru 1.5KE440CA Transient Voltage Suppressor Breakdown Voltage 6.8 to 440 Volts Peak Pulse Power 1500 Watts Features   CASE: DO-201AD DO-27      Breakdown Voltages (VBR) from 6.8 to 440V 1500W peak pulse power capability with a 10/1000 s

1N6264

Contextual Info: 1N6264 GaAs INFRARED EMITTING DIODE FEATURES PACKAGE DIMENSIONS • Good optical to mechanical alignment • Mechanically and wavelength matched to the 0.209 5.31 TO-18 series phototransistor 0.184 (4.67) • Hermetically sealed package 0.030 (0.76) NOM

Contextual Info: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS 1N6264 PACKAGE DIMENSIONS DESCRIPTION The 1N6264 is a 940nm LED in a narrow angle, TO-46 package. S E A T IN G g ST1332 G ood optical to m echanical alignm ent SYMBOL INCHES MIN. MAX. A <f>b MILLIMETERS MIN. .255

1N6268CAL

Abstract: 1N6276CA 1N6267CAL 1N6267CL 1N6268CL 1N6269CL 1N6303CAL 1N6284CL
Contextual Info: 1N6267CL - 1N6303CAL BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR VBR : 6.8 - 200 Volts PPK : 1500 Watts DO-201AD FEATURES : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to V BR min.

1n5711 diode

Contextual Info: 1N5711 / 1N6263 Schottky Barrier Diode Features 1. For general purpose applications. 2. Metal-on-silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of

1N6267

Abstract: 1N6303 5KE440CA JESD22-B102D J-STD-002B
Contextual Info: 1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in Unidirectional and Bidirectional • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty cycle :

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1N6263 1N5711 Features • • • • 400 mWatt Small Signal Schottky Diode 60 to 70 Volts High Reverse Breakdown Voltage

Transient voltage suppressors

Abstract: DIODE 1n6294a diode 1n6285A 1N6275 1,5ke15 diode 1n6278A
Contextual Info: 1.5KE6.8 thru 1.5KE440CA and 1N6267 thru 1N6303A Transient Voltage Suppressors Peak Pulse Power 1500W Breakdown Voltage 6.8 to 440V Features ‹ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ‹ Glass passivated junction ‹ 1500W peak pulse power capabililty on 10/1000us waveform,

ST10M

Contextual Info: E O 8 GaAs INFRARED EMITTING DIODE P?ßfLiCTBSiiCS 1N6264 The 1N6264 is a 940nm LED in a narrow angle, TO-46 package. ST1332 • Good optical to mechanical alignment SYMBOL A j»b «D &C, e «. rt i k L » INCHES MAX. MIN 255 ,01S .021 .230 ,iac .<86 .100 NOM.

Contextual Info: [ * 9 GaAs INFRARED EMITTING DIODE ipmutïiftiits 1N6266 The 1N6266 is a 940nm LED in a narrow angle, T M6 package. SEATIN G • Good optical io mechanical alignment SYMBOL A •8>b D Ü0D. a e, h .1 . k i. u JNCHES Ml» MAX. -255 .016 ,203 tao .021

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode 1N6263W SCHOTTKY DIODE SOD-123 Features 1.05 • · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance

BAT49

Abstract: BYV1060 BYV10-60 TMMBAT43 bat41 bat43 BAS70 MELF BAT43 BAT47 BYV10-40 DO35
Contextual Info: POWER RECTIFIERS SIGNAL SCHOTTKY DIODES DO35 Voltage max Current DO41 Part Number 20 Volts 350 mAmps BAT47 30 Volts 200 mAmps BAT42 BAT43 TMMBAT42 TMMBAT43 40 Volts 350 mAmps BAT48 TMMBAT48 1000 mAmps BYV10-40 TMBYV10-40 60 Volts 15mAmps 1N6263 TMM6263 1000 mAmps

Contextual Info: 1N6267A Series 1500 Watt Mosorb Zener Transient Voltage Suppressors Unidirectional* http://onsemi.com Mosorb devices are designed to protect voltage sensitive components from high voltage, high−energy transients. They have excellent clamping capability, high surge capability, low zener

Contextual Info: 1N5711 AND 1N6263 Schottky Diodes FEATURES DO-35 ♦ For general purpose applications. ♦ Metal-on-silicon Schottky barrier X device which is protected by a PN X. junction guard ring. The low forward M voltage drop and fast switching make it , ideal for protection of MOS devices, steering,

1N6263

Abstract: Scans-00155669
Contextual Info: B K C INTERNATIONAL 30E D • 117t1eîÔ3 0000356 b ■ ' T * 0 3 - O ci 1N6263 Silicon Schottky Barrier Diodes for general purpose applications Special Features: Low Forward Voltage Subnanosecond Switching Glass Hermetic Package Description The 1N6263 is a metal on silicon Schottky barrier device

1N63

Abstract: 1.5KE15C
Contextual Info: 1.5KE6.8 Series and 1N6267 thru 1N6303A Vishay Semiconductors formerly General Semiconductor TRANSZORB Transient Voltage Suppressors Case Style 1.5KE d * e d n nge e t x E e RaFeatures g a t l Vo • Underwriters Laboratory Recognition under UL standard

1N6263

Contextual Info: visHAY 1N6263 SCHOTTKY BARRIER SWITCHING DIODE y LITEM ZI POWER SEMICONDUCTOR Features • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance I Mechanical Data_ •

1N6287

Abstract: 1N6302A 5KE440A 1N6267 1N6267A 1N6268 1N6268A 1N6269 1N6303 1N6303A
Contextual Info: 1N6267. 1N6303 / 1.5KE 6.8. 1.5KE440 1N6267A. 1N6303A / 1.5KE 6.8A. 1.5KE440A 1500 W Unidirectional Transient Voltage Suppressor Diodes Dimensions in mm. DO201AE Plastic Peak Pulse Power Rating At 1 ms. Exp. 1500 W Reverse stand-off Voltage

in6284

Abstract: 1N6234 SKE350 1N623 SKE350A IN6280 IN6280A IN6269A I.5KE IN6278A
Contextual Info: ,/ Microsemi Corp. f The ötoae experts SANTA ANA, CA / / SCOTTSDALE, AZ For m ore inform ation call: 602 1N6267 thru 1N6303A and 1.5KE6.8 thru 1.5KE400A 941-6300 TRANSIENT ABSORPTION ZENER FEATURES UNIDIRECTIONAL AND BIDIRECTIONAL • ECONOMICAL • 1500 WATTS PEAK PULSE POWER DISSIPATION

15KEXX

Contextual Info: 1N6267A Series 1500 Watt Mosorb Zener Transient Voltage Suppressors Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have excellent clamping capability, high surge capability, low zener