ITT4 Search Results

saa6000

Abstract: 65536 page mode dynamic ITT4164 ITT5101S
Contextual Info: MOS MEMORIES ITT4164 65536-Bit Dynamic Random Access Memory Industry-Standard 16-Pin DIP Features 150 ns access time (ITT4164-15) 200 ns access time (ITT4164-20) All inputs including clocks are TTL compatible Standard power supply + 5 V, ±10% Three state TTL compatible output, Data out is not latched

rrmj

Contextual Info: r i * r««r-mj>uv•+*.*.i . '.<-'»■*■.-t » ■v\ i~ T H -*flp iiJ ii*itt4i ñ¡ E1 mf&æaBWKn Vi/ÚM ty'V tm sm?. • '■ •/, ■ ; ' t r ^ w # « « » * íw .^-v.í».gtvtAa<v»»ï^>tf¥* R í£ V j S SO N S . ■■■■’ : ««*,«

ITT401AC

Abstract: SOIC-14
Contextual Info: SP4T SWITCH WITH DIRECT TTL CONTROL AND SINGLE POSITVE SUPPLY ITT401AC FEATURES • • • • • Single Positive Supply +8V Direct TTL input On-Chip Decoder Logic Low Power Consumption Non-Reflective Ports DESCRIPTION ADVANCED INFORMATION GND J3 GND J1

itt 4116

Abstract: itt capacitors 4116 memory 4116 ITT IC 4027 pin diagram 4116 4027 itt ITT SEMICONDUCTORS ITT4
Contextual Info: ITT4116 16384-Bit Dynamic Random Access Memory 7-8 PHONb: 415 961-8121 TWX: (910) 379-6497 1121 SAN ANTONIO ROAD PALO ALTO, CALIF. 94303 TTT * 1 semiconductors * ITT4116 16384-Bit Dynamic Random Access Memory Features - Industry standard 16 pin DIP - 150 ns access time (ITT 4116-2)

ITT-4027-4

Abstract: ITT4027 ITT4116 ITT4027-3 pin pin compatible with MOSTEK MEMORY
Contextual Info: MOS MEMORIES ITT4027 4096-Bit Dynamic Random Access Memory 16-Pin Cerdip Case or 16-Pin Plastic Case Features 150 ns access time (ITT4027-2) 200 ns access time (ITT4027-3) 250 ns access time (ITT4027-4) 350 ns access time (ITT4027-6) All inputs including clocks are TTL compatible

64 PIN CERDIP

Contextual Info: HONEYWELL DIGITAL PRODUCT bb D E * 4SS14S3 0000050 b • ■ ■ RAD HARD ECL/TTL GATE ARRAY PRODUCT DESCRIPTION The HM1000R Gate Array Figure 1 is an 800 pico­ second, 1000 equivalent gate density LSI monolithic integrated circuit built using Honeywell’s radiation

2SA999

Abstract: 2SA999E 2sa9991 2SA999-E
Contextual Info: =m^mm<h=7yyx^> 2SA999 J « a y P N P x t : i r + » > 7 « > - > '* * - r. W H t lt jf c ® S' y a > P N P i t ’ í í á r ^ r ^ f ® f îiÈ o * Œ Jii| is f f l t - r. 4$ h 7 L - r ® ft, á S rA ffl h ? H ^ itì: : mm « • » IS 2 SA 999 t i ,

DIODE BA244

Abstract: 1n4148 ITT 30M5R DIODE BA243 BA244 ITT 1N4150 155pa3 BA243 BAX13 ITT44
Contextual Info: ITT Sem iconductors Diodes Epitaxial Pianar Diode Sw itches R E F E R E N C E T A B L E . Forr.f. bandsw itching up to 1000 M H z Code Switching Band V BH| min. V R F max. at l F O mA C max. pf BA243 B A244 VHF UHF 20 20 1.0 0.5 2 2 10 10 at V„ V Outline

TMS4464

Abstract: TMS 2764 Texas Instruments IC mk4564 mcm6256 tms4500a Fuji Electric tv schematic diagram ET 439 power module fuji mcm6665 74L5138 TMS4500
Contextual Info: SMYOOO2 . ,MOS Memory Data Book 1984 II I III \' h' \/ Commercial and Military , :\ Specifications ' 1'/ ! . .Jf TEXAS INSTRUMENTS Alphanumeric Index, Table of Contents, Selection Guide Interchangeability Guide _ Glossary/Timing Conventions/Data Sheet Structure

BQ3285ED

Contextual Info: bq3285ED/LD BENCHMARQ Real-Time Clock RTC Features General Description >•ACPI-compliant day-of-month alarm >- D irect clock/calendar replace­ m ent for IBM AT-compatible com puters and other applications X 2.7-5.5V operation (bq3285LD); 4.5-5.5V operation (bq3285ED)

SD1228

Abstract: D1860
Contextual Info: h "7 > y 7 , $ /T ra n sisto rs 2SD1228M/2SD1860 2 SD 1228 M O C n iflA O lo O U yU^> 7 h P ow er Amp. Eptaxial Planar NPN S ilico n Transistors • • 1 V CE sa t ) tf% . < im S M .% , > '/ X $ T riill/D im e n s io n s (U n it: mm) V * X < Ltl'S o 90mV at lc = 150mA

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

Contextual Info: JUl i fi 1993 MICRON I MT4C8512/3 L 512K X 8 WIDE DRAM SEMICONDUCTOR. ML WIDE DRAM 512K x 8 DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses

Contextual Info: P ro d u c t specification Grace Inertia Connector 2.5 — Tyco Electronics 108-5992 yu-fx • 02dec.’09 r e v :c 1 Scope : 1.1 Contents This specification covers the performance, test methods provisions of GRACE IN ERTIA Applicable product description shown in Appendix 1.

LS196

Abstract: ITT4
Contextual Info: S G S-THOMSON D7E D| 7 ^ 2 3 7 LOW POWER SCHOTTKY DOlbl^ 3 | frnTT54LS196/197 K 19 96 6/19 97 7 1^ K ", TT7 74LS L51 INTEGRATED CIRCUITS 67C 16322 4-STAGE PRESETTABLE RIPPLE COUNTERS DESCRIPTION The T54LS196/T74LS196 decade counter is par­ titioned into divide-by-two and divide-by-five sec­

sm2244

Abstract: SM2200 SQ2200 Pletronics SQ2200 SQ2215 ple SQ2200
Contextual Info: P LE TR ON IC S INC S ’Ô ' *2 3 14E D | 7520574 ÜÜÜDDlt 1 | Pletronics, Inc. TTL- & HC- COMPATIBLE CLOCK OSCILLATORS IN MINI-DIP PLE SQ2200 SERIES 4-pin mini-dip size saves board space. High speed CMOS output with full 10-TTL compatibility. Surface Mount (SM 2200) and throughole (SQ 2200) options available

75327C

Abstract: SN7401 transistor bf 175 75S208 26S10M SN75129 SN75107 SN55109A
Contextual Info: m - The Line Driver and Line Receiver Data Book for Design Engineers 1977 T exas In s t r u m e n t s INCORPORATED LC C 4290 741 0 5 - 2 7 - E C P rin te d in U .S .A . IM PO R TA N T NOTICES Texas Instruments reserves the right to make changes at any time in

sx3704

Abstract: BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram
Contextual Info: rh is Booklet • • • ue to fluctuations in availability, some types of semiconductors used in Thorn products have >f necessity changed from those originally specified and quoted in service literature. This )lus the fact that some service replacements are

FD300 diode

Abstract: BAX13 DIODE BA243 FD333 FD300 DIODE BA244 BA244 BA200 lN914 155pa3
Contextual Info: Sem iconductors Fairchild Sem iconductors Diodes C om puter D iodes B y A sce n d in g trr G la ss p acka g e REFEREN CE T A B L E Code trr nse c M ax. Bv v o lts M in nA M ax lR FD700 FD777 BAX13 BAY71 BAY74 1N914 1N916 1N4148 1N4448 0.7 0.75 4.0 4.0 4.0

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any

Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Automotive applications, Switched