4SS14S3 Search Results

4SS14S3 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
macrocell ecl Abstract: 4S514 Contextual Info: HONEYWELL DIGITAL PRODUCT bb dË J 4SS14S3 0000D43 *=1 T-42-11-13 JUNE 1985 ECL GATE ARRAY HE8000 PRO DUCT DESCRIPTION The HE8000 Gate Array Figure 1 is a 250 picosecond, 8000 equivalent gate density Very Large Scale Integra tion (VLSI) monolithic integrated circuit built using	OCR Scan	4ss14s3 0000d43 t-42-11-13 he8000 +310k/kh macrocell ecl 4s514	PDF
U904 Abstract: U902 Contextual Info: - ;-:-ff HONEYWELL DIGITAL PRODUCT Lb D E 4SS14S3 OODOIOD b \| • ’ LSTTL GATE ARRAY —-:-_ T-42-11-15 MARCH 1985 HT5000 PRODUCT DESCRIPTION The HT5000 G ate A rray (Figure 1 is a 600 picosecond, 5000 equivalent gate density Very Large	OCR Scan	4ss14s3 t-42-11-15 ht5000 ht50q0 +4qdd0117 085--march u904 u902	PDF
64 PIN CERDIP Contextual Info: HONEYWELL DIGITAL PRODUCT bb D E * 4SS14S3 0000050 b • ■ ■ RAD HARD ECL/TTL GATE ARRAY PRODUCT DESCRIPTION The HM1000R Gate Array Figure 1 is an 800 pico second, 1000 equivalent gate density LSI monolithic integrated circuit built using Honeywell’s radiation	OCR Scan	4ss14s3 t-42-11-15 hm1000r 10k/kh +345s14s3 64-pin 64 pin cerdip	PDF
HM3500 Contextual Info: HONEYüJELL D I G I T A L P R O D U C T bt De \| 4 S S m S 3 □□0DD73 7 \| T-42-11-15 MAY 1985 HM3500 ECL/TTL GATE ARRAY PRELIMINARY PRODUCT DESCRIPTION The HM3500 Figure 1 is a 400 picosecond, 3500 equivalent gate density VLSI monolithic integrated circuit using Honeywell’s ADB-II fabrication process.	OCR Scan	0dd73 t-42-11-15 hm3500 10k/kh	PDF