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    TIM7785-30SL----- Search Results

    TIM7785-30SL----- Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    DSR01S30SL
    Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 30 V, 0.1 A, SL2 Datasheet
    LMX2430SLEX/NOPB
    Texas Instruments 3.0 GHz/0.8 GHz PLLatinum Dual High Frequency Synthesizer for RF Personal Communications 20-ULGA -40 to 85 Visit Texas Instruments Buy

    TIM7785-30SL----- Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TIM7785-30SL
    Toshiba C-Band Power GaAs IMFETs; Frequency Band (GHz): 7.7-8.5; P1dB (dBm): 45; G1dB (dB): 6; Ids (A) Typ.: 7; IM3 (dBc) Typ.: -45; Rth (°C/W) Typ.: 1; Package Type: 2-16G1B Original PDF 451.09KB 4
    TIM7785-30SL
    Toshiba Microwave Power GaAs FET Scan PDF 274.67KB 5
    TIM7785-30SL
    Toshiba MICROWAVE POWER GaAs FET Scan PDF 168.48KB 5