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    FP4N100 Price and Stock

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    IXYS Corporation IXFP4N100PM

    MOSFETs TO220 1KV 4A N-CH POLAR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFP4N100PM 407
    • 1 $9.13
    • 10 $5.72
    • 100 $4.89
    • 1000 $4.22
    • 10000 $4.22
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    TTI IXFP4N100PM Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $4.56
    • 10000 $4.56
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    TME IXFP4N100PM 1
    • 1 $6.48
    • 10 $6.48
    • 100 $4.91
    • 1000 $3.65
    • 10000 $3.65
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    IXYS Corporation IXFP4N100P

    MOSFETs 4 Amps 1000V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFP4N100P 245
    • 1 $6.46
    • 10 $4.23
    • 100 $3.11
    • 1000 $2.61
    • 10000 $2.61
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    TTI IXFP4N100P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.61
    • 10000 $2.61
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    TME IXFP4N100P 396 1
    • 1 $3.72
    • 10 $2.96
    • 100 $2.68
    • 1000 $2.68
    • 10000 $2.68
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    Littelfuse Inc IXFP4N100P

    MOSFET, N-CH, 1KV, 4A, TO-220-3;
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXFP4N100P Bulk 1
    • 1 $4.30
    • 10 $4.30
    • 100 $4.30
    • 1000 $4.30
    • 10000 $4.30
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    RS IXFP4N100P Bulk 8 Weeks 50
    • 1 -
    • 10 -
    • 100 $3.55
    • 1000 $3.55
    • 10000 $3.55
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    Littelfuse Inc IXFP4N100PM

    MOSFET, N-CH, 1KV, 2.1A, TO-220-3;
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXFP4N100PM Bulk 1
    • 1 $7.30
    • 10 $7.30
    • 100 $7.30
    • 1000 $7.30
    • 10000 $7.30
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    RS IXFP4N100PM Bulk 8 Weeks 50
    • 1 -
    • 10 -
    • 100 $6.04
    • 1000 $6.04
    • 10000 $6.04
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    Harris Semiconductor RFP4N100

    Power Field-Effect Transistor, 4.3A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian RFP4N100 328
    • 1 -
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    FP4N100 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FP4N100

    Contextual Info: FP4N100 33 HARRIS August 1991 High Voltage N-Channel Enhancem ent-M ode Power Field-Effect Transistors Features Package T O -2 2 0 A B T O P V IE W • 4.3A, 1000V • rDS on = 3 .5 0 • UIS S O A Rating C u rve (Single Pulse) • - 5 5 ° C to + 1 5 0 °C O perating Tem perature


    OCR Scan     		RFP4N100 FP4N100 PDF