MJW16010 Search Results

npn 1000V 15A

Abstract: NPN Transistor VCEO 1000V diode 1000V 10a MJW16010A transistor 1000V 6A transistor VCE 1000V transistor 1000V vbe 10v, vce 500v NPN Transistor transistor VCEO 1000V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJW16010A DESCRIPTION •Low Collector Saturation Voltage ·Collector-Emitter Sustaining Voltage: VCEO SUS = 500V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for high-voltage, high-speed,power switching in

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MJ16010 Designer's Data Sheet MJW16010 SWITCHMODE Series NPN Silicon Power Transistors MJ16012* These transistors are designed for high-voltage, high-speed, power switching in

MJ16010

Abstract: MJ16012 p6302 IC 7403 2N6191 MJW16010 MJW16012 AM503 mj16
Contextual Info: ON Semiconductort MJ16010 SWITCHMODEt Series NPN Silicon Power Transistors MJW16010 MJ16012 * These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. The

MJW16010

Contextual Info: SavantIC Semiconductor Product Specification MJW16010 Silicon NPN Power Transistors DESCRIPTION •With TO-247 package ·High voltage ,high speed APPLICATIONS ·Switching Regulators ·Inverters ·Solenoids ·Relay Drivers ·Motor Controls ·Deflection Circuits

MJW16010A

Contextual Info: J , U na. C/ TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 usA MJW16010A Silicon NPN Power Transistor DESCRIPTION • Low Collector Saturation Voltage • Collector-Emitter Sustaining Voltage: VCEO(SUS) = 500V(Min) Wide Area of Safe Operation

MTP12N10 pin configuration

Abstract: PK MUR1100 MTP12N10 MTP8P10 PD-135 IC 7403 IC 7403 datasheet mjw16010a AM503 MJE210
Contextual Info: MOTOROLA Order this document by MJW16010A/D SEMICONDUCTOR TECHNICAL DATA Designer's MJW16010A*  Data Sheet NPN Silicon Power Transistors *Motorola Preferred Device 1 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in

P6302

Abstract: transistor equivalent table TL 3849 AN952
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJW16010A* Designer’s Data Sheet *M otoroii P rtfe rrtd D avtc* NPN Silicon Power Transistors 1 kV SWITCHMODE Series These transistors are designed for high-voltage, high-speed, power switching in inductive circuits w here fall tim e is critica l. They are p a rticu la rly suited for

MJW16010

Contextual Info: Inchange Semiconductor Product Specification MJW16010 Silicon NPN Power Transistors DESCRIPTION ・With TO-247 package ・High voltage ,high speed APPLICATIONS ・Switching Regulators ・Inverters ・Solenoids ・Relay Drivers ・Motor Controls ・Deflection Circuits

MJ3001 equivalent

Abstract: 2N3055 equivalent transistor NUMBER Motorola transistors MJE3055 TO 127 BD907 equivalent transistor equivalent book 2sc2238 Drive IC 2SC3346 TRANSISTOR REPLACEMENT GUIDE mje340 equivalent mje521 equivalent MJE350 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJW16010A*  Data Sheet Designer's NPN Silicon Power Transistors *Motorola Preferred Device 1 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for

bipolar transistor td tr ts tf

Abstract: AN952 16010a
Contextual Info: MOTOROLA Order this document by MJW16010A/D SEMICONDUCTOR TECHNICAL DATA M JW 16010A * D esigner’s Data Sheet ‘ Motorola Preferred Device NPN Silicon Power Transistors 1 kV SWITCHMODE Series These transistors are designed for high-voltage, high-speed, power switching in

mjw16010a

Abstract: PK MUR1100 AM503 MJE210 MTP12N10 MTP8P10 MUR105 P6302
Contextual Info: ON Semiconductort NPN Silicon Power Transistors 1 kV SWITCHMODEt Series MJW16010A* *ON Semiconductor Preferred Device These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are

MTP12N10 pin configuration

Abstract: MTP12N10 P6302
Contextual Info: MOTOROLA Order this document by MJW16010A/D SEMICONDUCTOR TECHNICAL DATA Designer's MJW16010A*  Data Sheet NPN Silicon Power Transistors *Motorola Preferred Device 1 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

mj16010

Abstract: MJ16012 MJ16012 MOTOROLA MJ16012 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J16010 M JW 16010 Designer’s Data Sheet SWITCHMODE Series NPN Silicon Power Transistors M J16012* These transistors are designed for high-voltage, high-speed, power switching in In d u c tiv e c irc u its w h e re fa ll tim e is c ritic a l. T h e y a re p a rtic u la rly s u ite d fo r

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes

2N5631 equivalent

Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —