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    16010A Search Results

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    Amphenol Corporation TS16010A0000G

    - Bulk (Alt: TS16010A0000G)
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    Avnet Americas TS16010A0000G Bulk 3,015
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    Avnet Abacus TS16010A0000G 16 Weeks 3,015
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    LEDIL F16010_ANGELETTE-M2

    Reflector - Boxed Product (Development Kits) (Alt: F16010_ANGELETTE-M2)
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    Avnet Americas F16010_ANGELETTE-M2 Box 10 Weeks 90
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    Avnet Silica F16010_ANGELETTE-M2 7 Weeks 90
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    EBV Elektronik F16010_ANGELETTE-M2 7 Weeks 90
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    FAG Bearings 16010-A

    DEEP GROOVE BALL BEARING, SINGLE ROW, 50MM ID, 80MM OD, 10MM W
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    RS 16010-A Bulk 1
    • 1 $78.24
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    Essentra Components GRF16010A

    GROMMET FOOT:PVC BLACK
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    RS GRF16010A Bulk 20 Weeks 10,000
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    DB Roberts GRF16010A
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    FAG Bearings 16010-A-C3

    DEEP GROOVE BALL BEARING, SINGLE ROW, 50MM ID, 80MM OD, 10MM W
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    RS 16010-A-C3 Bulk 1
    • 1 $78.24
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    16010A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    bipolar transistor td tr ts tf

    Abstract: AN952 16010a
    Contextual Info: MOTOROLA Order this document by 16010A/D SEMICONDUCTOR TECHNICAL DATA M JW 16010A * D esigner’s Data Sheet ‘ Motorola Preferred Device NPN Silicon Power Transistors 1 kV SWITCHMODE Series These transistors are designed for high-voltage, high-speed, power switching in


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    mjw16010a/d6010a340k-01bipolar transistor td tr ts tf+2an95216010a PDF

    fdt1600n10alz

    Contextual Info: FDT1600N10ALZ N-Channel PowerTrench MOSFET 100 V, 5.6 A, 160 mΩ Features Description • RDS on = 121 mΩ at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while


    Original
    fdt1600n10alzot-223 PDF

    Contextual Info: Preliminary FDT1600N10ALZ N-Channel PowerTrench MOSFET 100 V, 5.6 A, 160 mΩ Features Description „ RDS on = 121 mΩ at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been


    Original
    fdt1600n10alz PDF

    Contextual Info: FDT1600N10ALZ N-Channel PowerTrench MOSFET 100 V, 5.6 A, 160 mΩ Features Description • RDS on = 121 mΩ (Typ.) @ VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior


    Original
    fdt1600n10alz PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    cb-f36c2sd16422sd21822sc4489+11-08s-ksd 302 250v, 10airf 5630transistor 2sb 367irf 3055ac153ytransistor esm 2878tip 43c transistor2sk116bf199bd643 PDF

    TRANSISTOR tip122 CHN 949

    Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
    Contextual Info: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.


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    38v01transistor tip122 chn 949e2955tbd706+7tu f 1300313003 transistor npn power to 126transistor e2955tconstruction linear amplifier 2sc1945la 43018d679transistor bf 175 PDF