16010A Search Results
16010A Price and Stock
Amphenol Corporation TS16010A0000G- Bulk (Alt: TS16010A0000G) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TS16010A0000G | Bulk | 3,015 |
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TS16010A0000G | 16 Weeks | 3,015 |
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LEDIL F16010_ANGELETTE-M2Reflector - Boxed Product (Development Kits) (Alt: F16010_ANGELETTE-M2) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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F16010_ANGELETTE-M2 | Box | 10 Weeks | 90 |
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F16010_ANGELETTE-M2 | 7 Weeks | 90 |
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F16010_ANGELETTE-M2 | 7 Weeks | 90 |
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FAG Bearings 16010-ADEEP GROOVE BALL BEARING, SINGLE ROW, 50MM ID, 80MM OD, 10MM W |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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16010-A | Bulk | 1 |
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Essentra Components GRF16010AGROMMET FOOT:PVC BLACK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GRF16010A | Bulk | 20 Weeks | 10,000 |
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GRF16010A |
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FAG Bearings 16010-A-C3DEEP GROOVE BALL BEARING, SINGLE ROW, 50MM ID, 80MM OD, 10MM W |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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16010-A-C3 | Bulk | 1 |
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16010A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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bipolar transistor td tr ts tf
Abstract: AN952 16010a
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OCR Scan |
mjw16010a/d6010a340k-01bipolar transistor td tr ts tf+2 | |
fdt1600n10alzContextual Info: FDT1600N10ALZ N-Channel PowerTrench MOSFET 100 V, 5.6 A, 160 mΩ Features Description • RDS on = 121 mΩ at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while |
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fdt1600n10alzot-223 | |
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Contextual Info: Preliminary FDT1600N10ALZ N-Channel PowerTrench MOSFET 100 V, 5.6 A, 160 mΩ Features Description RDS on = 121 mΩ at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been |
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fdt1600n10alz | |
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Contextual Info: FDT1600N10ALZ N-Channel PowerTrench MOSFET 100 V, 5.6 A, 160 mΩ Features Description • RDS on = 121 mΩ (Typ.) @ VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior |
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fdt1600n10alz | |
ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
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OCR Scan |
cb-f36c2sd16422sd21822sc4489+11 | |
TRANSISTOR tip122 CHN 949
Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
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OCR Scan |
38v01transistor tip122 chn 949e2955tbd706+7 |