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    FDT1600N10ALZ Search Results

    FDT1600N10ALZ Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDT1600N10ALZ
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V SOT-223-4 Original PDF 10
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    FDT1600N10ALZ Price and Stock

    onsemi

    onsemi FDT1600N10ALZ

    MOSFET N-CH 100V 5.6A SOT223-4
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    onsemi FDT1600N10ALZ (POWERTRENCH)

    Mosfet, N-Ch, 100V, 5.6A, Sot-223; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:5.6A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V Rohs Compliant: Yes |Onsemi FDT1600N10ALZ
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    Newark FDT1600N10ALZ (POWERTRENCH) Cut Tape 14,327 1
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    FDT1600N10ALZ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    fdt1600n10alz

    Contextual Info: FDT1600N10ALZ N-Channel PowerTrench MOSFET 100 V, 5.6 A, 160 mΩ Features Description • RDS on = 121 mΩ at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while


    Original     		FDT1600N10ALZ FDT1600N10ALZ OT-223 PDF

    Contextual Info: Preliminary FDT1600N10ALZ N-Channel PowerTrench MOSFET 100 V, 5.6 A, 160 mΩ Features Description „ RDS on = 121 mΩ at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been


    Original     		FDT1600N10ALZ FDT1600N10ALZ PDF

    Contextual Info: FDT1600N10ALZ N-Channel PowerTrench MOSFET 100 V, 5.6 A, 160 mΩ Features Description • RDS on = 121 mΩ (Typ.) @ VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior


    Original     		FDT1600N10ALZ PDF