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    20N120 Search Results

    20N120 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TRS20N120HB
    Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 1200 V, 20 A, 2 in 1, TO-247 Datasheet

    20N120 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    20N120E2
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 34.25KB 1
    SF Impression Pixel

    20N120 Price and Stock

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    Infineon Technologies AG IHW20N120R5XKSA1

    IGBT 1200V 40A TO247-3
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    DigiKey IHW20N120R5XKSA1 Tube 1,374 1
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    Avnet Americas IHW20N120R5XKSA1 Tube 19 Weeks 480
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    Newark IHW20N120R5XKSA1 Bulk 1,019 1
    • 1 $4.80
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    TME IHW20N120R5XKSA1 16 1
    • 1 $3.78
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    ComSIT USA IHW20N120R5XKSA1 5
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    EBV Elektronik IHW20N120R5XKSA1 20 Weeks 240
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    onsemi NTBG020N120SC1

    SICFET N-CH 1200V 8.6A/98A D2PAK
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    DigiKey () NTBG020N120SC1 Digi-Reel 1,007 1
    • 1 $36.41
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    NTBG020N120SC1 Cut Tape 1,007 1
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    NTBG020N120SC1 Tape & Reel 800 800
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    Avnet Americas NTBG020N120SC1 Tape & Reel 5,600 17 Weeks 800
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    Mouser Electronics NTBG020N120SC1 1,471
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    Newark NTBG020N120SC1 Cut Tape 999 1
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    Rochester Electronics NTBG020N120SC1 15 1
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    TME NTBG020N120SC1 800
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    Avnet Asia NTBG020N120SC1 32 17 Weeks 800
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    Avnet Silica NTBG020N120SC1 18 Weeks 800
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    EBV Elektronik NTBG020N120SC1 8,800 19 Weeks 800
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    IXYS Corporation IXFX20N120P

    MOSFET N-CH 1200V 20A PLUS247-3
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    DigiKey IXFX20N120P Tube 292 1
    • 1 $27.56
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    TME IXFX20N120P 1 1
    • 1 $29.12
    • 10 $23.27
    • 100 $21.63
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    IXYS Corporation IXYA20N120C4HV

    IGBT PT 1200V 68A TO-263HV
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    DigiKey IXYA20N120C4HV Tube 278 1
    • 1 $10.78
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    Newark IXYA20N120C4HV Bulk 496 1
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    TTI IXYA20N120C4HV Tube 300 50
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    IXYS Corporation IXYN120N120C3

    IGBT MOD 1200V 240A SOT227B
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    DigiKey IXYN120N120C3 Tube 237 1
    • 1 $36.71
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    TTI IXYN120N120C3 Tube 300
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    20N120 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IC IGBT 20N120

    Abstract: 20n120 20N120 IGBT ixys ixdh 20n120 IXDH20N120D1 20N120D1
    Contextual Info: IXDH 20N120 VCES = 1200 V = 38 A IXDH 20N120 D1 IC25 VCE sat typ = 2.4 V High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G TO-247 AD G G C E IXDH 20N120 Symbol Conditions VCES TJ = 25°C to 150°C IXDH 20N120 D1 Maximum Ratings


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    20N120 20N120 O-247 IXDH20N120D1 IC IGBT 20N120 20N120 IGBT ixys ixdh 20n120 IXDH20N120D1 20N120D1 PDF

    20n120

    Abstract: induction heating cooker igbt induction cooker siemens igbt 20A 20N120BD1 induction cooker application notes
    Contextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGP 20N120B IXGP 20N120BD1 = 1200 = 40 = 3.4 = 160 tfi(typ) Preliminary Data Sheet V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


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    20N120B 20N120BD1 IC110 O-220 6A/DSEC16-06A 20n120 induction heating cooker igbt induction cooker siemens igbt 20A 20N120BD1 induction cooker application notes PDF

    IC IGBT 20N120

    Abstract: IXDH20N120AU1 ixdh20n120au 20N120
    Contextual Info: IXDA 20N120 AS VCES = 1200 V = 34 A IC25 VCE sat typ = 2.8 V High Voltage IGBT Short Circuit SOA Capability Square RBSOA C Preliminary Data TO-263 AB G G E E Symbol Conditions VCES TJ = 25°C to 150°C Maximum Ratings 1200 VCGR TJ = 25°C to 150°C; RGE = 20 kW


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    20N120 O-263 IXDH20N120AU1 IC IGBT 20N120 IXDH20N120AU1 ixdh20n120au PDF

    Contextual Info: MOTOROLA Order this document by MGW20N 120/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M GW 20N120 In su late d G ate Bipolar T ransistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    OCR Scan
    MGW20N 120/D 20N120 MGW20N120/D PDF

    Contextual Info: Advanced Technical Data High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE sat = 1200 = 40 = 3.4 = 160 tfi(typ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient


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    20N120B O-268 O-247 728B1 123B1 065B1 PDF

    Contextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30


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    20N120BD1 20N120BD1 IC110 O-247AD O-268 O-247) Fea140 PDF

    IXGH20N120BD1

    Abstract: IXGH 20N120BD1
    Contextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30


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    20N120BD1 20N120BD1 IC110 O-247AD O-268 O-247) Fea140 IXGH20N120BD1 IXGH 20N120BD1 PDF

    20N120D1

    Abstract: IC IGBT 20N120 20n120 FII30-12E ISOPLUS247
    Contextual Info: IXER 20N120 IXER 20N120D1 NPT3 IGBT IC25 = 36 A VCES = 1200 V VCE sat typ = 2.4 V in ISOPLUS247 C ISOPLUS247™ C G G G  C E IXER 20N120 Isolated Backside E E IXER 20N120D1 G = Gate C = Collector E = Emitter Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C


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    20N120 20N120D1 ISOPLUS247TM 20080118a 20N120D1 IC IGBT 20N120 20n120 FII30-12E ISOPLUS247 PDF

    Contextual Info: Advanced Technical Information VCES IC25 VCE sat tfi(typ) IXGH 20N120 IXGT 20N120 IGBT High Voltage, Low VCE(sat) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM


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    20N120 20N120 O-268 O-247 O-268AA PDF

    MJ480

    Contextual Info: IXDA 20N120AS High Voltage IGBT IC25 = 38 A = 1200 V VCES VCE sat typ = 2.4 V Short Circuit SOA Capability Square RBSOA TAB 1 h 3 TAB Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK


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    20N120AS 20110118a MJ480 PDF

    20N120

    Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 20N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 = 1200 V = 20 A RDS on = 0.75 Ω ≤ 300 ns trr D G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


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    20N120 728B1 123B1 728B1 065B1 20N120 PDF

    20N120BD1

    Abstract: ixys dsep 8-12a
    Contextual Info: High Voltage IGBT with Diode IXGP 20N120B IXGP 20N120BD1 VCES IC25 VCE sat Designed for induction heating applications = 1200 = 40 = 3.4 = 160 tfi(typ) V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


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    20N120B 20N120BD1 IC110 O-220 728B1 123B1 065B1 20N120BD1 ixys dsep 8-12a PDF

    20N120

    Abstract: IC IGBT 20N120
    Contextual Info: IXDH 20N120 AU1 High Voltage IGBT with Diode C Short Circuit SOA Capability Square RBSOA VCES = 1200 V = 34 A IC25 VCE sat typ = 2.8 V G E Preliminary Data Symbol Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 20 kΩ


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    20N120 O-247 IXDH20N120AU1 D-68623 IC IGBT 20N120 PDF

    Contextual Info: High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE sat tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V Maximum Ratings


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    20N120B IC110 O-268 O-247 728B1 PDF

    Contextual Info: IXDH 20N120 VCES = 1200 V IXDH 20N120 D1 IC25 = 38 A VCE sat typ = 2.4 V High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G TO-247 AD G G C E IXDH 20N120 Symbol Conditions VCES TJ = 25°C to 150°C IXDH 20N120 D1 Maximum Ratings


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    20N120 20N120 O-247 IXDH20N120D1 PDF

    Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 20N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 = 1200 V = 20 A RDS on = 0.75 Ω ≤ 300 ns trr D G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C


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    20N120 OT-227 E153432 728B1 123B1 728B1 065B1 PDF

    Contextual Info: Advanced Technical Information IXFK 20N120 IXFX 20N120 HiPerFETTM Power MOSFETs VDSS ID25 = 1200 V = 20 A = 0.75 Ω RDS on trr ≤ 300 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous


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    20N120 247TM PDF

    Contextual Info: IXDA 20N120AS IC25 = 38 A = 1200 V VCES VCE sat typ = 2.4 V High Voltage IGBT Short Circuit SOA Capability Square RBSOA TAB 1 h 3 TAB Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK


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    20N120AS O-263 20110118a PDF

    Contextual Info: High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE sat tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V Maximum Ratings


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    20N120B O-268 IC110 728B1 123B1 728B1 065B1 20N120B PDF

    Contextual Info: IXDH 20N120 VCES = 1200 V = 38 A IXDH 20N120 D1 IC25 VCE sat typ = 2.4 V High Voltage IGBT with optional Diode C C Short Circuit SOA Capability Square RBSOA G G E E IXDH 20N120 Preliminary Data IXDH 20N120 D1 Symbol Conditions Maximum Ratings VCES TJ = 25°C to 150°C


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    20N120 20N120 O-247 IXDH20N120D1 D-68623 PDF

    IC IGBT 20N120

    Abstract: 20N120
    Contextual Info: IGBT IXGA 20N120 VCES IXGP 20N120 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 40 A IC90 TC = 90°C


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    20N120 O-220AB O-263 728B1 IC IGBT 20N120 PDF

    Contextual Info: □IXYS High Voltage IGBT with optional Diode IXDH 20N120 IXDH 20N120 D1 V CES ^C25 vCE sat typ 1200 V 38 A 2.4 V Short Circuit SOA Capability Square RBSOA IXDH 20N120 Preliminary Data Symbol Conditions IXDH 20N120 D1 Maximum Ratings VCES Tj = 25°C to 150°C


    OCR Scan
    20N120 20N120 PDF

    TO-247 weight

    Abstract: 20N120 20N120 IGBT
    Contextual Info: IGBT IXGH 20N120 VCES IXGT 20N120 IC25 VCE sat tfi(typ) = 1200 V = 40 A = 2.5 V = 380 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM


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    20N120 O-247 O-268 O-268 728B1 TO-247 weight 20N120 IGBT PDF

    IXDH20N120D1

    Abstract: IXDH20N120 20N120 IC IGBT 20N120 ixys ixdh 20n120 20N120 IGBT 20N120D1 200-Millimeter
    Contextual Info: IXDH 20N120 VCES = 1200 V = 38 A IXDH 20N120 D1 IC25 VCE sat typ = 2.4 V High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G TO-247 AD G G C E IXDH 20N120 Symbol Conditions VCES TJ = 25°C to 150°C IXDH 20N120 D1 Maximum Ratings


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    20N120 20N120 O-247 IXDH20N120D1 IXDH20N120D1 IXDH20N120 IC IGBT 20N120 ixys ixdh 20n120 20N120 IGBT 20N120D1 200-Millimeter PDF