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    20N120B Price and Stock

    IXYS Corporation

    IXYS Corporation IXGP20N120B3

    Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IXGP20N120B3 34 1
    • 1 $8.12
    • 10 $8.12
    • 100 $4.13
    • 1000 $3.55
    • 10000 $3.55
    		Buy Now
    Mouser Electronics IXGP20N120B3
    • 1 -
    • 10 -
    • 100 -
    • 1000 $4.24
    • 10000 $4.24
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    TTI IXGP20N120B3 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $4.38
    • 10000 $4.38
    		Buy Now

    IXYS Corporation IXYX120N120B3

    Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IXYX120N120B3 18 1
    • 1 $31.46
    • 10 $25.02
    • 100 $22.61
    • 1000 $22.61
    • 10000 $22.61
    		Buy Now
    Mouser Electronics IXYX120N120B3
    • 1 -
    • 10 -
    • 100 -
    • 1000 $29.88
    • 10000 $29.88
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    TTI IXYX120N120B3 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $29.76
    • 10000 $29.76
    		Buy Now

    IXYS Corporation IXGK120N120B3

    Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IXGK120N120B3 1
    • 1 $40.10
    • 10 $31.95
    • 100 $28.71
    • 1000 $28.71
    • 10000 $28.71
    		Get Quote
    Mouser Electronics IXGK120N120B3
    • 1 -
    • 10 -
    • 100 -
    • 1000 $48.12
    • 10000 $48.12
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    TTI IXGK120N120B3 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $46.86
    • 10000 $46.86
    		Buy Now

    IXYS Corporation IXGA20N120B3-TRL

    Transistor: IGBT; 1.2kV; 36A; 180W; D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IXGA20N120B3-TRL 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.81
    • 10000 $3.81
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    Mouser Electronics IXGA20N120B3-TRL
    • 1 -
    • 10 -
    • 100 -
    • 1000 $4.42
    • 10000 $4.42
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    IXYS Corporation IXYP20N120B4

    Transistor: IGBT; 1.2kV; 76A; 375W; TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IXYP20N120B4 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.98
    • 10000 $2.98
    		Get Quote
    Mouser Electronics IXYP20N120B4
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.60
    • 10000 $3.60
    		Get Quote
    TTI IXYP20N120B4 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.60
    • 10000 $3.60
    		Buy Now
    Find more 20N120B price and stock on Findchips.com

    20N120B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    20n120

    Abstract: induction heating cooker igbt induction cooker siemens igbt 20A 20N120BD1 induction cooker application notes
    Contextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGP 20N120B IXGP 20N120BD1 = 1200 = 40 = 3.4 = 160 tfi(typ) Preliminary Data Sheet V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		20n120b20n120bd1ic110o-220+66a/dsec16-06a20n120induction heating cookerigbt induction cookersiemens igbt 20ainduction cooker application notes PDF

    Contextual Info: Advanced Technical Data High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE sat = 1200 = 40 = 3.4 = 160 tfi(typ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient


    Original     		20n120bo-268o-247728b1+2123b1065b1 PDF

    Contextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		20n120bd1ic110o-247ado-268+2o-247fea140 PDF

    IXGH20N120BD1

    Abstract: IXGH 20N120BD1
    Contextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		20n120bd1ic110o-247ado-268+4o-247fea140ixgh20n120bd1ixgh 20n120bd1 PDF

    20N120BD1

    Abstract: ixys dsep 8-12a
    Contextual Info: High Voltage IGBT with Diode IXGP 20N120B IXGP 20N120BD1 VCES IC25 VCE sat Designed for induction heating applications = 1200 = 40 = 3.4 = 160 tfi(typ) V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		20n120b20n120bd1ic110o-220+4728b1123b1065b1ixys dsep 8-12a PDF

    Contextual Info: High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE sat tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V Maximum Ratings


    Original     		20n120bic110o-268o-247+1728b1 PDF

    Contextual Info: High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE sat tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V Maximum Ratings


    Original     		20n120bo-268ic110728b1+2123b1065b1 PDF

    Contextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGQ 20N120B IXGQ 20N120BD1 = 1200 = 40 = 3.4 = 160 tfi(typ) V A V ns BD1 Maximum Ratings TO-3P (IXGQ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES


    Original     		20n120b20n120bd1ic110728b1+2123b1065b1 PDF

    Contextual Info: Advanced Technical Data High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 = 1200 = 40 = 3.4 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES


    Original     		20n120bd1o-247ado-268o-247ad/to-268 PDF

    igbt for induction heating

    Abstract: 15v140
    Contextual Info: High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE sat tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V Maximum Ratings


    Original     		20n120bo-268ic110o-247+5728b1123b1065b1igbt for induction heating15v140 PDF

    igbt induction cooker

    Abstract: induction cooker application notes induction heating cooker siemens induction cooker
    Contextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGQ 20N120B IXGQ 20N120BD1 = 1200 = 40 = 3.4 = 160 tfi(typ) V A V ns BD1 Maximum Ratings TO-3P (IXGQ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES


    Original     		20n120b20n120bd1ic110728b1+6123b1065b1igbt induction cookerinduction cooker application notesinduction heating cookersiemens induction cooker PDF

    igbt for induction heating ic

    Contextual Info: Advanced Technical Information High Voltage IGBT Designed for inductive heating applications IXGQ 20N120B VCES IXGP 20N120B IC25 VCE sat Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V


    Original     		20n120bic110o-220igbt for induction heating ic PDF

    igbt induction cooker

    Abstract: induction heating cooker IXGH20N120BD1
    Contextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		20n120bd1ic110o-2680-12a/dsec+40-12aigbt induction cookerinduction heating cookerixgh20n120bd1 PDF

    Contextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		20n120bd1ic110o-2680-12a/dsec+10-12a PDF

    7N60B equivalent

    Abstract: 60N60B2-7Y 7N60C-2X 7N60B-2X 10n60b ixgd 28N12 60N60C2-7Y 20N120 16N60C2
    Contextual Info: Chip-Shortform2004.pmd Insulated Gate Bipolar Transistors G-Series Type VCES VCE sat @ IC Chip type Chip size dimensions 6 TJM = 150°C V V A mm mils Source bond wire Equivalent device recommended data sheet 26.10.2004, 12:44 High Gain High Gain High Gain


    Original     		7n60b-2x7n60c-2x16n60b2-3x16n60c2-3x+1230n60b2-4x30n60c2-4x40n60b2-5y40n60c2-5y60n60b2-7y60n60c2-7y7n60b equivalent10n60bixgd28n1220n12016n60c2 PDF