MJW16212 Search Results

EQUIVALENT FOR mjf18004

Abstract: MOTOROLA MJW16212 MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004
Contextual Info: MOTOROLA Order this document by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors

transistor rc 3866

Abstract: t 3866 power transistor t 3866 transistor equivalent transistor transistor 3866 s t 3866 transistor 3866 transistor c 3866 transistor transistor 3866 transistor t 3866 3866 power transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JP tM M IM M A IM M M F 1 M M l* aa M JI1M 04) • W f U M H w H M llD N I M P I M M U m M JM M M I SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors M JW 16212* The MJW16212 is a state-of-the-art SWITCHMODE™ bipolar power transistor. It

MC1391

Abstract: MJW16212 transistor mjw16212 2N5337 2N6191 MC7812 MJF16212 MJH16212 MR856
Contextual Info: ON Semiconductort MJW16212 * SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors *ON Semiconductor Preferred Device POWER TRANSISTOR 10 AMPERES 1500 VOLTS – VCES 50 AND 150 WATTS The MJW16212 is a state–of–the–art SWITCHMODE bipolar

transistor rc 3866

Abstract: t 3866 to220 power transistor t 3866 transistor equivalent transistor EQUIVALENT FOR mjf18004 bs170 replacement EIA/transistor rc 3866 pin configuration transistor bd140 TRANSISTOR REPLACEMENT table for transistor transistor cross reference BU108
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors MJW16212* The MJW16212 is a state–of–the–art SWITCHMODE bipolar power transistor. It

Contextual Info: MOTOROLA Order this document by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors

A 3131 IC

Abstract: MJW16212 22a ic X10-4
Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: MJW16212 PH: 561 283-4500 FAX: (561)286-8914 Website: http://www.semi -tech-inc.com CASE OUTLINE: TO-247 NPN SILICON HIGH VOLTAGE POWER TRANSISTOR ABSOLUTE MAXIMUM RATING:

BS170 MOTOROLA

Abstract: MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004 MJF18006
Contextual Info: MOTOROLA Order this document by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

Contextual Info: MOTOROLA Order this document by MUR10150E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M U R 10150E SCANSWITCH™ Power R ectifier For Use As A Damper Diode In High and Very High Resolution Monitors Motorola Preferred Device The MUR10150E is a state-of-the-art Power Rectifier specifically designed for use as a

transistor marking code 12W SOT-23

Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp
Contextual Info: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes

2N5631 equivalent

Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —

BD179-10 equivalent

Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

sec tip41c

Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power

TRANSISTOR BC 384

Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required

Transistor 2sC1060

Abstract: 2SD460 2SC143 All similar transistor 2sa715 BU108 MJ410 2SD404 BD241C BUT56 BDW59
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Complementary Silicon Power Transistors PNP BDW46 BDW47* . . . designed for general purpose and low speed switching applications. • High DC Current Gain – hFE = 2500 typ. @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc:

MJ11017 equivalent

Abstract: BU108 MJ11021 BU326 BU100 MJE3055T
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ11017 MJ11021* NPN MJ11018* Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJ11022 • High dc Current Gain @ 10 Adc — hFE = 400 Min All Types