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MGW40N60U Abstract: TO247AE Contextual Info: MOTOROLA SEMICONDUCTOR o TECHNICAL Order this document by MGW40N60UID DATA F Product Preview Data Sheet insulated Gate Bipolar mansistor N-Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high	Original	mgw40n60uid 340f43 o-247ae 14wi-2m7 +5k2-2m29298 2phxm71m mgw40n60u/d mgw40n60u to247ae	PDF

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MGW40N60U

Abstract: TO247AE
Contextual Info: MOTOROLA SEMICONDUCTOR o TECHNICAL Order this document by MGW40N60UID DATA F Product Preview Data Sheet insulated Gate Bipolar mansistor N-Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high

Original

mgw40n60uid 340f43 o-247ae 14wi-2m7 +5

PDF