40N60 Search Results

40N60 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TK040N60Z1		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 600 V, 52 A, 0.04 Ω@10 V, TO-247	Datasheet

40N60 Datasheets (4)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
40N60A	IXYS	Low Vce(sat) IGBT High Speed IGBT	Original	PDF	94.08KB	6
40N60B3	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	29.6KB	1
40N60SCD1	IXYS	CoolMOS Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode in High Voltage ISOPLUS i4-PACTM	Original	PDF	34.31KB	2
40N60SCD1	IXYS	CoolMOS Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode in High Voltage ISOPLUS i4-PACTM	Original	PDF	34.31KB	2

40N60 Price and Stock

Filter by Manufacturer

Select Manufacturer


Vishay Siliconix SIHD240N60E-GE3 MOSFET N-CH 600V 12A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHD240N60E-GE3	Tube	3,866		1	1 $2.78 10 $1.78 100 $1.21 1000 $1.03 10000 $1.03	Buy Now
Vishay Siliconix SIHH240N60E-T1-GE3 MOSFET N-CH 600V 12A PPAK 8 X 8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	SIHH240N60E-T1-GE3	Digi-Reel	1,484		1	1 $2.84 10 $2.15 100 $1.74 1000 $1.54 10000 $1.54	Buy Now
	SIHH240N60E-T1-GE3	Cut Tape	1,484		1	1 $2.84 10 $2.15 100 $1.74 1000 $1.54 10000 $1.54	Buy Now
New Advantage Corporation	SIHH240N60E-T1-GE3		6,000		1	1 - 10 - 100 - 1000 - 10000 $1.98	Buy Now
Infineon Technologies AG IKW40N60H3FKSA1 IGBT TRENCH FS 600V 80A TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IKW40N60H3FKSA1	Tube	983		1	1 $4.84 10 $4.84 100 $2.70 1000 $1.88 10000 $1.75	Buy Now
Avnet Americas ()	IKW40N60H3FKSA1	Tube	240	19 Weeks	30	1 - 10 - 100 $2.00 1000 $2.00 10000 $2.00	Buy Now
	IKW40N60H3FKSA1	Bulk			1	1 $3.99 10 $3.42 100 $2.10 1000 $2.10 10000 $2.10	Buy Now
Newark	IKW40N60H3FKSA1	Bulk	431		1	1 $5.73 10 $4.90 100 $2.96 1000 $2.69 10000 $2.69	Buy Now
Rochester Electronics	IKW40N60H3FKSA1		210		1	1 - 10 - 100 $2.20 1000 $1.97 10000 $1.86	Buy Now
Chip One Stop	IKW40N60H3FKSA1	Tube	197	0 Weeks, 1 Days	1	1 $4.74 10 $4.16 100 $2.53 1000 $2.50 10000 $2.24	Buy Now

Chip Stock	IKW40N60H3FKSA1		18,070			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	IKW40N60H3FKSA1		14,570			1 - 10 - 100 $2.39 1000 $2.05 10000 $2.05	Buy Now
onsemi FGH40N60UFDTU IGBT FIELD STOP 600V 80A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FGH40N60UFDTU	Tube	893		1	1 $4.09 10 $4.09 100 $2.25 1000 $1.55 10000 $1.40	Buy Now
Mouser Electronics	FGH40N60UFDTU		558			1 $4.18 10 $2.30 100 $2.30 1000 $1.54 10000 $1.39	Buy Now
Newark	FGH40N60UFDTU	Bulk	384		1	1 $4.86 10 $4.25 100 $2.82 1000 $2.62 10000 $2.62	Buy Now
Richardson RFPD	FGH40N60UFDTU				450	1 - 10 - 100 - 1000 $1.40 10000 $1.40	Buy Now
Avnet Asia	FGH40N60UFDTU			12 Weeks	450	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Avnet Silica	FGH40N60UFDTU			13 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip Stock	FGH40N60UFDTU		8,700			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Flip Electronics	FGH40N60UFDTU		598			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi FGH40N60SMD IGBT FIELD STOP 600V 80A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FGH40N60SMD	Tube	882		1	1 $5.65 10 $5.65 100 $3.19 1000 $2.25 10000 $2.16	Buy Now
Mouser Electronics	FGH40N60SMD		12,321			1 $4.93 10 $2.80 100 $2.80 1000 $2.24 10000 $2.16	Buy Now
TME	FGH40N60SMD		96		1	1 $4.82 10 $4.03 100 $3.34 1000 $3.08 10000 $3.08	Buy Now
Richardson RFPD	FGH40N60SMD				450	1 - 10 - 100 - 1000 $2.16 10000 $2.16	Buy Now
Avnet Silica	FGH40N60SMD			10 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Chip Stock	FGH40N60SMD		23,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Find more 40N60 price and stock on Findchips.com

40N60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TO247AD Abstract: TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247 Contextual Info: IXKR 40N60C CoolMOS Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base VDSS ID25 RDS on 600 V 38 A Ω 70 mΩ D G Preliminary data S ISOPLUS 247TM E153432 MOSFET Conditions	Original	40N60C ISOPLUS247TM 247TM E153432 TO247AD TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247	PDF
IXGR40N60 Abstract: 40n60 40N60c 40N60CD1 IXGR40N60CD1 Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60C IXGR 40N60CD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 75 A = 2.5 V = 75 ns Preliminary Data Sheet (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	ISOPLUS247TM 40N60C 40N60CD1 IC110 E153432 728B1 IXGR40N60 40n60 40N60c IXGR40N60CD1	PDF
40n60 Abstract: 40N60B2D1 40N60B2 Contextual Info: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE sat tfi typ IXGR 40N60B2 IXGR 40N60B2D1 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) = 600 V = 75 A = 1.9 V = 82 ns Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching	Original	ISOPLUS247TM 40N60B2 40N60B2D1 IC110 065B1 728B1 123B1 40n60 40N60B2D1	PDF
Contextual Info: IXKC 40N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 28 A RDS on) max = 95 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 Features	Original	40N60C ISOPLUS220TM E72873 20080523a	PDF
40n60c Abstract: mosfet 4800 E72873 Contextual Info: IXKC 40N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 28 A RDS on) max = 95 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873	Original	40N60C ISOPLUS220TM E72873 20080523a 40n60c mosfet 4800 E72873	PDF
IXGR40N60C2D1 Abstract: 40n60c2 ixgr 40n60c2d1 40n60c2d1 40n60c ixgr40n60c2 40n60 074K Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM IXGR 40N60C2 IXGR 40N60C2D1 = = VCE SAT = tfi(typ = VCES IC25 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_C2 IXGR_C2D1 ISOPLUS 247TM (IXGR) Symbol Test Conditions VCES TJ = 25°C to 150°C	Original	ISOPLUS247TM 40N60C2 40N60C2D1 247TM IC110 ID110 40N60C2D1) IXGR40N60C2D1 40n60c2 ixgr 40n60c2d1 40n60c2d1 40n60c ixgr40n60c2 40n60 074K	PDF
40n60c2 Contextual Info: HiPerFASTTM IGBT C2-Class High Speed IGBTs VCES IC25 VCE sat tfi typ IXGH 40N60C2 IXGT 40N60C2 = 600 V = 75 A = 2.7 V = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V	Original	40N60C2 O-268 IC110 O-247 40n60c2	PDF
Contextual Info: IXSK 40N60BD1 IXSX 40N60BD1 IGBT with Diode PLUS247 TM package Short Circuit SOA Capability VCES IC25 VCE sat tfi(typ) = 600 = 75 = 2.2 = 120 V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	PLUS247 40N60BD1 40N60BD1 247TM	PDF
Contextual Info: Advanced Technical Information IXSR 40N60BD1 IGBT with Diode ISOPLUS 247TM VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600	Original	247TM 40N60BD1	PDF
Contextual Info: IXSR 40N60CD1 IGBT with Diode ISOPLUS247TM VCES IC25 = 600 = 62 = 2.5 = 70 VCE SAT tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR	Original	ISOPLUS247TM 40N60CD1	PDF
43N60 Abstract: 40N60 max4340 MOSFET 40A 600V Contextual Info: ADVANCE INFORMATION HiPerFETTM Power MOSFET IXFN 43N60 IXFN 40N60 IXFK 43N60 IXFK 40N60 Single MOSFET Die VDSS I D25 RDS on trr 600V 600V 600V 600V 43A 40A 43A 40A 0.13W 0.15W 0.13W 0.15W 200ns 200ns 200ns 200ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings	Original	200ns 200ns 43N60 40N60 40N60 O-264 max4340 MOSFET 40A 600V	PDF
Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM IXGR 40N60B2 IXGR 40N60B2D1 C2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi typ = 600 V = 75 A = 1.9 V = 82 ns Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet	Original	ISOPLUS247TM 40N60B2 40N60B2D1 IC110 ISOPLUS247 E153432 IF110 2x31-06B	PDF
Contextual Info: HiPerFASTTM IGBT C2-Class High Speed IGBTs IXGH 40N60C2 IXGT 40N60C2 VCES IC25 VCE sat tfi typ = 600 V = 75 A = 2.7 V = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V	Original	40N60C2 O-268 IC110 O-247	PDF
B1116 Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1 Contextual Info: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40	OCR Scan	O-220 O-263 O-247 O-2680XST) 16N60 24N60 30N60 40N60 25N100 B1116 b1104 N60A B1118 10N120 B1102 B1126 35N120U1	PDF

40N60SCD1 Abstract: ixkf40n60scd1 IXYS DS 145 Contextual Info: IXKF 40N60SCD1 CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 41 A RDS on) typ. = 60 mΩ trr = 70 ns with Series Schottky Diode and Ultra Fast Antiparallel Diode in High Voltage ISOPLUS i4-PAC™ ISOPLUS i4-PAC™ 5 DS Preliminary data 1 DF 1 T 2 5 E72873	Original	40N60SCD1 E72873 20110201b 40N60SCD1 ixkf40n60scd1 IXYS DS 145	PDF
40N60C Contextual Info: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 40N60C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage, MOSFET Symbol Test Conditions Maximum Ratings VDSS = 600 V ID25 = 28 A Ω RDS(on) = 96 mΩ	Original	ISOPLUS220TM 40N60C 728B1 065B1 123B1 40N60C	PDF
diode b34 Abstract: b34 diode b34 datasheet b34 844 PLUS247 B34 on B34 transistor 40N60BD1 C110 Contextual Info: Advanced Technical Information HiPerFAST TM IGBT with Diode IXGX 40N60BD1 VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient	Original	40N60BD1 PLUS247 diode b34 b34 diode b34 datasheet b34 844 PLUS247 B34 on B34 transistor C110	PDF
40N60BD1 Abstract: 40N60B 40N60 IXGR40N60BD1 IXGR40N60 Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60B IXGR 40N60BD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 70 A = 2.1 V = 180 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	ISOPLUS247TM 40N60B 40N60BD1 lead40N60BD1) 728B1 40N60B 40N60 IXGR40N60BD1 IXGR40N60	PDF
40n60c2d1 Abstract: *40n60c2d1 IXGH40N60C2D1 transistor kf 508 40N60 diode fr 307 40N60C2D Contextual Info: Advance Technical Data HiPerFASTTM IGBT with Diode VCES IC25 IXGH 40N60C2D1 IXGT 40N60C2D1 IXGJ 40N60C2D1 = 600 V = 75 A = 2.5 V = 32 ns VCE SAT tfi(typ) C2-Class High Speed IGBTs TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C	Original	40N60C2D1 O-247 IC110 40n60c2d1 *40n60c2d1 IXGH40N60C2D1 transistor kf 508 40N60 diode fr 307 40N60C2D	PDF
TO-264 Abstract: 40N60BD1 PLUS247 Contextual Info: IXSK 40N60BD1 IXSX 40N60BD1 IGBT with Diode TM PLUS247 package Short Circuit SOA Capability VCES IC25 VCE sat tfi(typ) = 600 = 75 = 2.2 = 120 V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	40N60BD1 PLUS247 TO-264 40N60BD1 PLUS247	PDF
40N60BD1 Contextual Info: IGBT with Diode ISOPLUS 247TM IXSR 40N60BD1 VCES IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 70 A = 2.2 V = 120 ns Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600	Original	247TM 40N60BD1 728B1	PDF
43N60 Abstract: 40n60 IXFN40N60 IXFK40N60 IXFK43N60 IXFN43N60 Contextual Info: ADVANCE INFORMATION HiPerFETTM Power MOSFET IXFN 43N60 IXFN 40N60 IXFK 43N60 IXFK 40N60 Single MOSFET Die VDSS I D25 RDS on trr 600V 600V 600V 600V 43A 40A 43A 40A 0.13W 0.15W 0.13W 0.15W 200ns 200ns 200ns 200ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings	Original	43N60 40N60 200ns O-264 43N60 40n60 IXFN40N60 IXFK40N60 IXFK43N60 IXFN43N60	PDF
Contextual Info: CoolMOSTM Power MOSFET IXKC 40N60C in ISOPLUS220TM Package Electrically Isolated Back Surface Low RDS on , High Voltage, CoolMOSTM Superjunction MOSFET VDSS = 600 V ID25 = 24 A Ω RDS(on) = 96 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings	Original	40N60C ISOPLUS220TM E153432 405B2	PDF
IXGR40N60C2D1 Abstract: 40N60C2 40N60c2d1 ixgr 40N60c2d1 Contextual Info: Advance Technical Data IXGR 40N60C2 IXGR 40N60C2D1 HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 = 600 V = 60 A = 2.7 V = 32 ns VCE SAT tfi(typ) Lightspeed 2TM Series (Electrically Isolated Back Surface) PLUS 247TM (IXFX) IXGR_C2 IXGR_C2D1 Symbol Test Conditions	Original	40N60C2 40N60C2D1 ISOPLUS247TM 247TM 728B1 123B1 728B1 065B1 IXGR40N60C2D1 40N60C2 40N60c2d1 ixgr 40N60c2d1	PDF

40N60 Search Results

40N60 Result Highlights (1)

40N60 Datasheets (4)

40N60 Price and Stock

Vishay Siliconix SIHD240N60E-GE3

Vishay Siliconix SIHH240N60E-T1-GE3

Infineon Technologies AG IKW40N60H3FKSA1

onsemi FGH40N60UFDTU

onsemi FGH40N60SMD

40N60 Datasheets Context Search

TO247AD

IXGR40N60

40n60

40n60c

IXGR40N60C2D1

40n60c2

43N60

B1116

40N60SCD1

40N60C

diode b34

40N60BD1

40n60c2d1

TO-264

40N60BD1

43N60

IXGR40N60C2D1