128KX8 Search Results

alarm clock IC

Abstract: bq4842y
Contextual Info: bq4842Y RTC Module with 128Kx8 NVSRAM Features General Description >• I n te g r a t e d SRAM, re a l-tim e clock, CPU supervisor, crystal, pow er-fail control circuit, and battery The bq4842Y RTC Module is a non­ volatile 1,048,576-bit SRAM organ­ ized as 131,072 words by 8 bits with

FM28V100-TG

Abstract: FM28V100-TGTR tca 335 A
Contextual Info: FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8  High Endurance 100 Trillion 1014 Read/Writes  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process

TAA 310A

Abstract: KM681000BLP-7L 128k x8 SRAM TSOP km681000blp-7 KM681000B KM681000BL KM681000BLE KM681000BL-L
Contextual Info: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 um CMOS • Organization : 128K x 8 • Power Supply Voltage : Single 5V +/-10% • Low Data Retention Voltage : 2V Min • Three state output and TTL Compatible

KM68U1000B

Abstract: KM68V1000B
Contextual Info: CMOS SRAM KM68V1000B, KM68U1000B Family 128Kx8 bit Low Power & Low Vcc CMOS Static RAM GENERAL DESCRIPTION FEATURE SUMMARY • Process Technology: 0.6 um CMOS • Organization : 128Kx8 • Power Supply Voltage KM68V1000B fa m ily : 3.3V +/- 0.3V KM68U1000B family : 3.0V +/- 0.3V

68 1103

Abstract: KM681000BL A14F
Contextual Info: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION The KM 681000BUBL-L is a 1,048,576-bit high-speed Static Random Access Memory organized as131,072 words by 8 bits. The device is fabricated using Samsung's advanced

bq4013MA-120

Abstract: bq4013Y bq4013YMA-120 bq4013
Contextual Info: bq4013/Y 128Kx8 Nonvolatile SRAM Features General Description ➤ Data retention for at least 10 years without power The CMOS bq4013/Y is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy

FM18L08

Abstract: FM20L08 FM20L08-60-TG
Contextual Info: Preliminary FM20L08 1Mbit Bytewide FRAM Memory – Extended Temp. Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process

Contextual Info: High Performance 128Kx8 C M O S SRAM p i AS7C1024 AS7C1024L 128Kx8 CM O S S RAM Common I/O FEATURES • Organization: 131,072 words x 8 bits • Equal access and cycle times • High speed • Easy memory expansion with CE1, CE2, OE inputs - 10/12/15/20/25/35 ns address access time

AM29F010

Contextual Info: EDI7C32128C 128Kx32 Flash 128Kx32 High Speed Flash Module Features The EDI7C32128C is a high speed, high performance, four megabit density Flash module, organized as 512Kx32 bits, containing four 128Kx8 die mounted in a package. Four Chip Enables are provided to independently enable

EDI8L24129V

Contextual Info: EDI8L24129V 128Kx24 SRAM 3.3 Volt FEATURES The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the EDI8L24129V is ideal for creating a single chip memory solution

Contextual Info: bq4013/bq4013Y BENCHMARQ 128Kx8 Nonvolatile SRAM Features General Description > Data retention in the absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The in teg ral control circuitry and lithium energy source provide reli­

Contextual Info: W D EDI5M32128C I ELECTRONIC DESIGNS IN C. High Performance Four Megabit EEPROM Module 128Kx32 CMOS ] l fl[ EEPROM Module Features The EDI5M32128C is a high speed, high perform­ ance, four megabit density EEPROM module organized as 128Kx32 bits. The module has four 128Kx8

EDI88130CS20MI

Contextual Info: ^EDI _ EDI88130CS Beclronic Designs Inc. High Performance Megabit Monolithic SRAM 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88130CS is a high speed, high performance, monolithic Static RAM organized as 128Kx8 bits. An additional chip enable line provides system memory

Contextual Info: EDI88128C ELECTRONIC DESIGNS INC. High Performance Megabit Monolithic SRAM 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88128C is a high speed, high performance, monolithic Static RAM organized as 128Kx8 bits. The device is also available as EDI88130C with an

Contextual Info: _ EDI7F8512C ^ED I Electronic Designs Inc. High Performance Four Megabit Flash EEPROM 512Kx8 CMOS Flash EEPROM Module Features The EDI7F8512C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 512Kx8 bits, the module contains four 128Kx8 Flash Memo­

Contextual Info: bq4842Y BENCHMARQ RTC Module With 128Kx8 NVSRAM Features General Description >• I n t e g r a t e d SR A M , r e a l - t i m e clock, C PU su p erv iso r, c ry sta l, p o w er-fail c o n tro l c irc u it, a n d b attery The bq4842Y RTC Module is a non­

Contextual Info: _ EDI88130CS m o \ Bedronic Detignt Inc. High Performance Megabit Monolithic SRAM 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88130CS is a high speed, high performance, monolithic Static RAM organized as 128Kx8 bits. An additional chip enable line provides system memory

Contextual Info: WME128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES  Read Access Times of 125, 140, 150, 200, 250, 300ns  Page Write Cycle Time 10ms Max.  JEDEC Approved Packages  Data Polling for End of Write Detection  Hardware and Software Data Protection

Contextual Info: M/HITE /M ICROELECTRONICS WS128K8-XCX 128Kx8 SRAM MODULE FEATURES FIG. 1 • Access Times 25 to 45nS ■ Standard M icro circ u it Draw ing, 5962-93156 PIN CONFIGURATION TOP VIEW NCC A16C A14C A12 C A7 C A6 H A 5Ü A4 C A3 C A2 C A1C ADC i/ooC 1/01 □ 1/02C

Contextual Info: MEMORY MODULE MRAM 128Kx8-SOP 3DMR1M08VS1426 Magnetoresistive Ram MODULE 1 Mbit MRAM organized as 128Kx8 Pin Assignment Top View SOP 44 (Pitch : 0.80 mm) Features - Organized as 128Kx8. - Single +3.3V +/-0.3V power supply operation. - Symetrical high-speed read and write fast access

Contextual Info: EDI88128CS 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES  Access Times of 15*, 17, 20, 25, 35, 45, 55ns The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby

5962-96691

Abstract: WMS128K8-XXX
Contextual Info: WMS128K8-XXX HI-RELIABILITY PRODUCT 128Kx8 MONOLITHIC SRAM, SMD 5962-96691 pending FEATURES • Access Times 70, 85, 100, 120ns ■ Commercial, Industrial and Military Temperature Range ■ Revolutionary, Center Power/Ground Pinout JEDEC Approved • 32 lead Ceramic SOJ (Package 101)

ACU51

Abstract: EEPROM128KX8 128KX8
Contextual Info: New Product Release Advanced Control Unit ACU ACU51 Block EEPROM 128Kx8 Four 8-Bit Parallel Ports Power Control Two Synch. Serial Ports Four Asynch. Serial Ports Digital Interface and Control Specifications Features • Size and Weight: 1.0” x 1.4” x 0.12”, 3 grams

EM128L08

Abstract: EM128L08N EM128L08T
Contextual Info: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM128L08 Advance Information EM128L08 Family 128Kx8 Bit Ultra-Low Power Asynchronous Static RAM Overview Features The EM128L08 is an integrated memory device