KM681OOO Search Results

Contextual Info: KM681OOOBLI/BLI-L CMOS SRAM 131,072 W O RD x 8 Bit C M O S Static RAM<mdustnai Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85° C • Fast Access Time: 7 0 ,100ns max.) • Low Power Dissipation Standby (CMOS) : 550;<W(max.)

Contextual Info: CM O S SRAM KM681OOOBLI/BLI-L 1 3 1 ,0 7 2 W O fíD X 8 B it C M O S S ts tic R A M industriai Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85° C • Fast Access Time: 7 0 ,100ns(max.) • Low Power Dissipation

KM681000AL-L

Abstract: KM681000ALT
Contextual Info: CMOS SRAM KM681000AL/KM681OOOAL-L 128K X8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55,70,85,100,120ns max. • Low Power Dissipation Standby (CMOS): 1 0/j W (typ.) L-Version 5piW (typ.) LL-Version O perating : 35m W (typ.) • Single 5 V ± 1 0 % Power Supply

Contextual Info: CMOS SRAM KM681OOOALPI/ALGI 128Kx8 Bit Static RAM Industrial Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range: - 4 0 to 85°C • Fast Access Time: 70,100 ns (Max.) • Low Power Dissipation Standby (C M O S ): 550/xW (Max.) LAfer.

Contextual Info: CMOS SRAM KM681OOOBL/BL-L 131,072 WORD x 8 Bit CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast A c c e s s T im e : 55, 70, 85, 100ns M ax. • L o w P o w e r D issipation S ta n d b y (C M O S ) : 10.«W(Typ.) L-Version 5/i WfTyp.) LL-Version O p era tin g

0820R

Abstract: KM62256B
Contextual Info: KM681OOOBLI/BLI-L ~l3 1 , 0 V2 W O R D X CMOS SRAM 8 B it C M O S S ts tic R A M Industrial Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85° C • Fast Access Time: 7 0 ,100ns(max.) • Low Power Dissipation

km681000Alp

Abstract: KM681000A
Contextual Info: CMOS SRAM KM681000AL/KM681OOOAL-L 1 2 8 K X 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 70,85,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10|iW (typ.) L-Version 5(jW (typ.) LL-Version Operating : 35mW (typ.) • Single 5 V ± 10% Power Supply

Contextual Info: SAMSUNG ELECTRONICS INC L.7E D • 7 ^ 4 1 4 2 0017S12 bSR «SMf iK ADVANCE INFORMATION KM681000BL/KM681OOOB L-L CMOS SRAM 131,072 WORD X 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 55, 70, 85, 100ns max. • Low Power Dissipation

csi-2

Abstract: 256X8
Contextual Info: KM681OOOALPI/ALGI CMOS SRAM 128Kx8 Bit Static RAM Industrial Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range: - 4 0 to 8 5 ° C • Fast Access Tim e: 70,100 ns (Max.) • Low Power D issipation Standby (CMOS) : 550MW (M ax.) L-\fer.

132SA

Abstract: km681000a
Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7'ìt.mMS 0 0 1 4 G 1 5 Ü61 ■ SMGK KM681OOOALI/ALI-L CMOS SRAM 131,072 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range: - 40 to 85°C • Fast Access Time: 70, 100ns Max. • Low Power Dissipation

TAA 310A

Abstract: KM681000BLP-7L 128k x8 SRAM TSOP km681000blp-7 KM681000B KM681000BL KM681000BLE KM681000BL-L
Contextual Info: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 um CMOS • Organization : 128K x 8 • Power Supply Voltage : Single 5V +/-10% • Low Data Retention Voltage : 2V Min • Three state output and TTL Compatible

68 1103

Abstract: KM681000BL A14F
Contextual Info: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION The KM 681000BUBL-L is a 1,048,576-bit high-speed Static Random Access Memory organized as131,072 words by 8 bits. The device is fabricated using Samsung's advanced

Contextual Info: KM681000BLE / BLE-L CMOS SRAM 128Kx8 Bit Extended Temperature Range Operating SRAM FEATURES GENERAL DESCRIPTION • Extended Temperature Range : -25 to 85°C • Fast Access Time : 70,100 ns Max. • Low Power Dissipation Standby (CM O S): 550nW(Max.)L-Ver.

Contextual Info: KM681000ALPI/ALGI CMOS SRAM 128Kx8 Bit Static RAM Industrial Temperature Range Operation FEATURES GENERAL DESCRIPTION • In d ustria l Tem perature Range: - 4 0 to 85°C • Fast A ccess Tim e: 70,100 ns (Max.) • Low Power D issip a tio n Standby (C M O S ): 550/jW (Max.) L-\fer.

km681000lp

Abstract: KM681000LG KM681 km681000l
Contextual Info: KM681000L/KM681000L-L CMOS SRAM 128K X 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70, 85, 100, 120ns max. • Low Power Dissipation — Standby (CMOS): 10|jW (typ.) L-Version 5^iW(typ.) L-L Version — O perating : 110mW/MHz (max.)

"30 pin simm"

Abstract: 30-pin simm memory "16m x 8" KM68512 256K x 8 SRAM dip 30-pin SIMM RAM 30-pin SIMM 30 pin simm
Contextual Info: FUNCTION GUIDE MEMORY ICs 2.2 Dynamic RAM Module Continued Based Component 16M DRAM Base 2.3 Part Number Organization KMM53281OOV/VG/VP KMM5368100G KMM5368000H/HG KMM5368100H/HG KMM5816000T KMM5816100T KMM5916000T KMM5916100T 8Mx32 8M x 36 8Mx36 8M X 36

Contextual Info: KM681000BL/BL-L CMOS SRAM 131,072 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION Pin Nam e ? —? p ÒÒ OOp OOcolt Pin Function A 0 -A 16 Address Inputs We Write Enable input CS1, CS2 Chip Seet Input ÔE 1/01-1/08 uuuuyuyuyuuuyuuu PIN CONFIGURATION Top Views

Contextual Info: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 urn CMOS • Organization: 128K x 8 • Power Supply Voltage : Single 5V +/-10% • Low Data Retention Voltage: 2V Min • Three state output and TTL Compatible

Contextual Info: Advance Information KM681000C Family 128Kx8 bit Low Power CMOS Static RAM CMOS SRAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 uM CMOS The • Organization : 128K x 8 • Power Supply Voltage : Single 5V +/-10% SAMSUNG'S advanced CMOS process technology.

0820R

Abstract: KM681000CLG-7L KM681000CLGI-7L 32-TSOP1-R KM681000CLP-7 KM681000CLT-7L KM681000CLG
Contextual Info: PRIORITY KM681000C Family CMOS SRAM Document Titie 128K x8 bit Low Power CMOS Static RAM Revision History Revision No. History Pratt Date Remark 0.0 Initial draft November 22th 1995 Design target 0.1 First revision - Separate read and write at Icc, Icci Icc = Icci - * Read : 15mA, Write : 35mA

cs1g

Contextual Info: KM681000ALI/ALI-L CM O S SRAM 131,072 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range: - 4 0 to 85°C The KM 681000ALI/ALI-L is a 1,048,576-bit high-speed S ta tic R and o m A c c e s s M em ory o rganized as 131,072

681000CLP

Abstract: P55n 681000C 2U27 0-00C M681000CL
Contextual Info: Advance Information KM681000C Family CMOS SRAM 128Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 uM CMOS • Organization : 128Kx8 • Power Supply Voltage : Single 5V +/-10% The KM681000C family is fabricated

KM681000BLE

Contextual Info: CMOS SRAM KM681000BLE / BLE-L 128Kx8 B it Extended Temperature Range Operating SRAM GENERAL DESCRIPTION FEATURES • E x te n d e d T e m p e ra tu r e R a n g e : -2 5 to 85°C T h e K M 6 8 1 0 0 0 B L E /B L E -L is a 1 ,0 4 8 ,5 7 6 -b it h ig h -s p e e d

km681000lp

Contextual Info: SAMSUNG E L E C T R O N I C S INC b4E ]> • 7^4142 KM681000L/KM681000L-L 0 D1 3 eì cì b 521 SMGK CMOS SRAM 128K X 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70, 85, 100, 120ns max. • Low Power Dissipation -S ta n d b y (CMOS): lO^W (typ.) L-Version