KM681000A Search Results

Contextual Info: KM681000ALPI/ALGI CMOS SRAM 128Kx8 Bit Static RAM Industrial Temperature Range Operation FEATURES GENERAL DESCRIPTION • In d ustria l Tem perature Range: - 4 0 to 85°C • Fast A ccess Tim e: 70,100 ns (Max.) • Low Power D issip a tio n Standby (C M O S ): 550/jW (Max.) L-\fer.

KM681000AL-L

Abstract: KM681000ALT
Contextual Info: CMOS SRAM KM681000AL/KM681OOOAL-L 128K X8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55,70,85,100,120ns max. • Low Power Dissipation Standby (CMOS): 1 0/j W (typ.) L-Version 5piW (typ.) LL-Version O perating : 35m W (typ.) • Single 5 V ± 1 0 % Power Supply

Contextual Info: S A M S UN G E L E C T R O N I C S INC b4E D • 7 * ^ 4 1 4 2 0 0 1 4 0 2 4 OT4 ■ SMGK KM681000ALV CMOS SRAM 131,072 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Extended Operating Voltage: 2 . 7 - 5.5V • Fast Access Time 3V Operation: 240ns Max.

cs1g

Contextual Info: KM681000ALI/ALI-L CM O S SRAM 131,072 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range: - 4 0 to 85°C The KM 681000ALI/ALI-L is a 1,048,576-bit high-speed S ta tic R and o m A c c e s s M em ory o rganized as 131,072

Contextual Info: KM681000AL/KM681000AL-L CMOS SRAM 128KX8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access T im * 70,85,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10pW (typ.) L-Version 5|iW (typ.) LL-Version Operating : 35mW (typ.) • Single S V ±10 % Power Supply

Contextual Info: KM681000AL-V CMOS SRAM 1 2 8 K x 8 Bit Static R A M W ide Voltage Range Operation FEATURES GENERAL DESCRIPTION • Extended Operating Voltage: 2.7-5.5V • Fast Access Time — 3V Operation: 240ns (Max.) — 5V Operation: 120ns (Max.) • Low Power Dissipation Standby/Operating

km681000alt

Contextual Info: SAMSUNG EL EC T R O N I C S INC b7E D • 7^4145 KM681000AL/KM681000AL-L QÜ17SDS 70T « S r i G K CMOS SRAM 1 2 8 K X 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55,70,85,100,120ns max. • Low Power Dissipation Standby (CMOS): 1 0/jW (typ.) L-Version

km681000Alp

Abstract: KM681000A
Contextual Info: CMOS SRAM KM681000AL/KM681OOOAL-L 1 2 8 K X 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 70,85,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10|iW (typ.) L-Version 5(jW (typ.) LL-Version Operating : 35mW (typ.) • Single 5 V ± 10% Power Supply

KM681000ALT

Abstract: km681000Alp 681000
Contextual Info: KM681000AL/KM681000AL-L CMOS SRAM 1 2 8 K X 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 70,85,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10^W (typ.) L-Version 5^W (typ.) LL-Version Operating : 35m W (typ.) • Single 5 V ± 10% Power Supply

KM681000AL-V

Abstract: KM681000ALP-V KM681000ALT KM68100al
Contextual Info: KM681000AL-V CMOS SRAM 131.072 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Extended Operating Voltage: 2.7 - 5.5V • Fast Access Time 3V Operation: 240ns Max. 5V Operation: 120ns (Max.) • Low Power Dissipation Standby/Operating 3V Operation: 2.4iiW/1.2mW (Typ.)

toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258

TC551001a

Abstract: CXK584000 Fujitsu FLL 100 SRM2264 cxk58527 uPD434000 lh5168 km6264 M5M51008 SRM20256
Contextual Info: 8K X 8 HYUNDAI MITSUBISHI MOSEL S-MOS SAMSUNG SHARP SONY TOSHIBA 32K X HY6264A M5M5165P MS6264 SRM2264 KM6264 LH5168 CXK5864B TC5565 70/85/100/120 70/100/120/150 70/100 100/120 70/100/120 80/100 70/100 100/120/150 P-## P-## L-##PC LC-## A-##P -##L P-## ALP-##

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

KM6264BL-10

Abstract: samsung CMOS SRAM KMM591000 KM75C01 KM75C01AP80 KM75C03AJ-50 KM6264BL7 KM75C01AP-20 KM75C01AP-25 KM75C01AP-80
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAIM »¡SAMSUNG Electronics 11 MEMORY ICs »SElectronics SAMSUNG FUNCTION GUIDE MEMORY ICS sgSAMSUNG Electronics FUNCTION GUIDE 13 MEMORY ICs FUNCTION GUIDE *: N ew Product f: P relim inary P roduct f t : U nder D evelopm ent

Contextual Info: CMOS SRAM KM681OOOALPI/ALGI 128Kx8 Bit Static RAM Industrial Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range: - 4 0 to 85°C • Fast Access Time: 70,100 ns (Max.) • Low Power Dissipation Standby (C M O S ): 550/xW (Max.) LAfer.

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

KMG81000-12L

Abstract: C4122 KM681000-10L lh511000 M5M51008a M628128 TR10L KM681000-7L M5M51008A-55L Hitachi Scans-001
Contextual Info: - 1481M CMOS X M £ tt * OC TAAC •ax ns) TCAC max (n s ) 'f TOE nax (n s ) «y TOH a in (ns) S t a t i c + TOD (ns) y / TWP tin (n s ) R A M (1 3 1 , 0 7 2 x 8 ) TDS min (ns) 3 2 PIN M tt TDH min (ns) TWD ■ in (n s ) TWR fiax (n s ) V D D or V C C (V)

PE 8001A

Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1

KM424C256Z

Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100

KM68512

Abstract: 12BKX8 km6865b
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM CMOS n— — 256K bit 1M bit 105 ELECTRONICS MEMORY ICs — FUNCTION GUIDE 4M bit 106 ELECTRONICS MEMORY ICs FUNCTION GUIDE 107 ELECTRONICS MEMORY ICs FUNCTION GUIDE CM O S 108 ELECTRONICS MEMORY ICs

csi-2

Abstract: 256X8
Contextual Info: KM681OOOALPI/ALGI CMOS SRAM 128Kx8 Bit Static RAM Industrial Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range: - 4 0 to 8 5 ° C • Fast Access Tim e: 70,100 ns (Max.) • Low Power D issipation Standby (CMOS) : 550MW (M ax.) L-\fer.

KM416C256-7

Abstract: KM6264BL-10 KM416C256-10 KM75C01AP80 KM62256BL-10 KM75C02AJ-20 KM75C01AP-35 KM41C4000A KM68512L-7/7L
Contextual Info: MEMORY ICS 1. INTRODUCTION 1.1 Dynamic RAM iS SAM SUNG FUNCTION GUIDE MEMORY ICs — FUNCTION GUIDE 4M bit 4M X 1 KM41C4000A-7 - — KM41C4000AL-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-8 KM41C4000AL-10 KM41C4000ASL-7- KM41C4000ASL-8— KM41C4000ASL-10

132SA

Abstract: km681000a
Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7'ìt.mMS 0 0 1 4 G 1 5 Ü61 ■ SMGK KM681OOOALI/ALI-L CMOS SRAM 131,072 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range: - 40 to 85°C • Fast Access Time: 70, 100ns Max. • Low Power Dissipation

KMM591000AN

Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
Contextual Info: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC