M628128 Search Results

Contextual Info: 52E Gl D • 003Ö13E S G S -T H O M S O N TflO ■ S G T H s 6 T ¡*f s - thohson M628128 VERY FAST CMOS 1 Megabit 128K x 8 SRAM WITH OUTPUT ENABLE ■ 128K x 8 CMOS FAST SRAM WITH OUTPUT ENABLE • EQUAL CYCLE AND ACCESS TIMES: 15, 17, 20,25ns ■ LOW Vcc DATA RETENTION: 2V

B628

Abstract: 1 megabit 128K x 8 SRAM
Contextual Info: M628128 1 Megabit 128K x 8 VERY FAST SRAM WITH OUTPUT ENABLE DATA BRIEFING 128K x 8 VERY FAST SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 15, 20ns LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O JEDEC PLASTIC SOJ, 400 mil PACKAGE 32 1 SOJ32 (E)

Contextual Info: S G S -1H 0M S 0N M628128 ^ 7 # RfflDMSItLIÊTnSORDDÊi VERY FAST CMOS 1 Megabit 128K x 8 SRAM WITH OUTPUT ENABLE • 128K x 8 CMOS FAST SRAM WITH OUTPUT ENABLE ■ EQUAL CYCLE AND ACCESS TIMES: 15, 17, 20, 25ns ■ LOW Vcc DATA RETENTION: 2V ■ TRI-STATE COMMON I/O

M628128

Abstract: SOJ32
Contextual Info: M628128 1 Megabit 128K x 8 VERY FAST SRAM WITH OUTPUT ENABLE 128K x 8 VERY FAST SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 15, 20ns LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O JEDEC PLASTIC SOJ, 400 mil PACKAGE 32 1 SOJ32 (E) 400 mils DESCRIPTION

Contextual Info: Æ T r S G S - T H O M S O N * 7 # . [ « » ilL IM M IK ê a M628128 1 Megabit 128K x 8 VERY FAST SRAM WITH OUTPUT ENABLE 128Kx 8 VERY FAST SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 15,20ns LOW Vcc DATA RETENTION: 2V TRI-STATE COMMON I/O JEDEC PLASTIC SOJ, 400 mil PACKAGE

Contextual Info: /T T S G S -T H O M S O N ^7# «»IILIIgTMDtg® M628128 1 Megabit 128K x 8 VERY FAST SRAM WITH OUTPUT ENABLE • 128K x 8 VERY FAST SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 15,20ns ■ LOW Vcc DATA RETENTION: 2V ■ TRI-STATE COMMON I/O

628128

Contextual Info: n Z J ^ 7 # S G S -T H O M S O N M628128 []^ o g ^ s [E L i ^ © i]a © i VERY FAST CMOS 1 Megabit (128K x 8) SRAM WITH O UTPUT ENABLE • 128K x 8 CMOS FAST SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 15, 17, 20,25ns ■ LOW Vcc DATA RETENTION: 2V

628128

Abstract: 628128 SRAM
Contextual Info: SGS-1H0 MS0 N \m M628128 VERY FAST CMOS 1 Megabit 128K x 8 SRAM WITH OUTPUT ENABLE • 128K x 8 CMOS FAST SRAM WITH OUTPUT ENABLE ■ EQUAL CYCLE AND ACCESS TIMES: 15, 17, 20, 25ns ■ LOW Vcc DATA RETENTION: 2V ■ TRI-STATE COMMON I/O ■ JEDEC PLASTIC SOJ, 400 mil PACKAGE

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

HM628128LP-10

Abstract: HM628128LP-8 HM628128LFP-7 ah41 hm628128-10 HM628128T-7 M628128 DP-32 HM628128 HM628128FP-10
Contextual Info: M628128 Series - 13 10 72 -w o rd x 8 -b it H ig h S p eed C M O S S ta tic RAM The Hitachi HM 628128 is a CMOS static RAM organized 128-kword x 8-bit. It realizes higher d en sity, h igh er perform ance and low pow er consum ption by em ploying 0.8 Jim Hi-CMOS

TOP SIDE MARKING M27C512

Contextual Info: QUALITY & RELIABILITY REPORT October 1995 to September 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

M27C512 SGS-THOMSON

Abstract: M2201 ST93C46
Contextual Info: QUALITY & RELIABILITY REPORT July 1995 to June 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

HM628128LP-10SL

Abstract: HM628128LP-10 HM628128LFP-8 HM628128LFP-8SL
Contextual Info: M628128 Series - 131072-word x 8-bit High Speed CMOS Static RAM The Hitachi M628128 is a CMOS static RAM organized 128-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 Jim Hi-CMOS process technology.

EDI88128C-100

Abstract: EDI88128C-35 EDI88128C-55 EDI88128C-70 ED188130LPS im628 ED188130C Hitachi Scans-001 ED188130CS-20 ed188130cs
Contextual Info: - IM ïSÆEffl m £ tt £ CC CMOS x TAAC •ax ns) TCAC ■ax (ns) TOE nax (ns) TOH nin (ns) RAM ( 1 3 1 , 0 7 2 x 8 ) S t a t i c * a y / TOD ■ax (ns) TffP »in (ns) m 14 TDS nin (ns) TDH sin (ns) TIW) min (ns) TttR nax (ns) VDD o r V C C (V) IW> max

256x16 eprom

Abstract: GS-2I5-D12 GS-D250M PHDIP28 GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B
Contextual Info: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SGS-THOMSON DATABOOKS ORDER CODE DB a 4 B IT MCU FAMILY ET9400 DBET9400ST/1

Contextual Info: QUALITY & RELIABILITY REPORT April 1995 to March 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

UM61256AK-15

Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

misplaced Wire Bonds

Abstract: TOP SIDE MARKING M27C512 1562Q M27C512 SGS-THOMSON
Contextual Info: QUALITY & RELIABILITY REPORT January to December 1995 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, EPROM, OTP Memory and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

um61256ak-15

Abstract: w24m257ak-15 um61256 um61256ck-20 um61256ak-12 km62256blg-7 KM68257Bp-20 W24M257AK HY6264ALP-10 w24M257
Contextual Info: ISSI Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM/NVM Serial EEPROM EPROM FLASH Static RAM SEPTEMBER 1996 CROSS REFERENCE GUIDE E2PROM ATMEL ISSI MIL PACKAGE SYMBOL PC P SC G SC GR AT93C46-10PC AT93C46-10PC-2.7 AT93C46-10SC AT93C46-10SC-2.7

KMG81000-12L

Abstract: C4122 KM681000-10L lh511000 M5M51008a M628128 TR10L KM681000-7L M5M51008A-55L Hitachi Scans-001
Contextual Info: - 1481M CMOS X M £ tt * OC TAAC •ax ns) TCAC max (n s ) 'f TOE nax (n s ) «y TOH a in (ns) S t a t i c + TOD (ns) y / TWP tin (n s ) R A M (1 3 1 , 0 7 2 x 8 ) TDS min (ns) 3 2 PIN M tt TDH min (ns) TWD ■ in (n s ) TWR fiax (n s ) V D D or V C C (V)

"Lookaside Cache"

Contextual Info: / T T SCS-THOMSON TA125 TECHNICAL ARTICLE Synchronous Burst SRAM for secondary CACHE systems Ricky Tuttle SGS-THOMSON Microelectronics Carrollton, USA The advent of high speed microprocessors and the requirement for high performance systems has opened the door to the Fast SRAM FSRAM mar­

MK45H14

Abstract: AN-211 mk48c02 M48Z09 M48Z19 ST16XY ST16xyz M48Z32Y MK45h04 M/MCMA140P1600TA
Contextual Info: GENERAL INDEX C M O S UV EPR O M & OTP M EM O R IE S . M27C64A C M O S 64K 8K x 8 UV E P R O M . 57 55 M27C256B C M O S 256K (32K x 8) UV EPRO M & OTP R O M .