M27C64A Search Results

st m27c64a

Abstract: 1N914 M27C64A PLCC32 AN620
Contextual Info: M27C64A 64 Kbit 8Kb x8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 150ns ■ LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA ■ PROGRAMMING VOLTAGE: 12.5V ± 0.25V ■ HIGH SPEED PROGRAMMING

1N914

Abstract: M27C64A PLCC32 132A-6 STMicroelectronics DATE CODE m27c64a
Contextual Info: M27C64A 64 Kbit 8Kb x8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 150ns ■ LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA ■ ■ ■ 28 PROGRAMMING VOLTAGE: 12.5V ± 0.25V

1N914

Abstract: M27C64A PLCC32 m27c64
Contextual Info: M27C64A 64K 8K x 8 UV EPROM and OTP EPROM FAST ACCESS TIME: 150ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.5V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING HIGH SPEED PROGRAMMING (less than 1 minute)

Contextual Info: M27C64A 64K 8K x 8 UV EPROM and OTP EPROM DATA BRIEFING FAST ACCESS TIME: 150ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.5V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING HIGH SPEED PROGRAMMING

st m27c64a

Abstract: M27C64A 1N914 JESD97 PLCC32
Contextual Info: M27C64A 64 Kbit 8Kb x8 UV EPROM and OTP EPROM Feature summary • 5V ± 10% supply voltage in Read operation ■ Access time: 100ns ■ Low power “CMOS” consumption: – Active Current 30mA – Standby Current 100µA ■ Programming voltage: 12.5V ± 0.25V

st m27c64a

Abstract: M27C64A PLCC32
Contextual Info: SGS-THOMSON * 7 # . M27C64A ü CMOS 64K 8K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 150ns ■ C O M PATIBLE W ITH HIGH SPEED M IC R O ­ PROCESSORS, ZER O W AIT STATE ■ LOW POWER "CMOS” CONSUMPTION: - Active Current 30mA - Standby C urrent 100p.A

1N914

Abstract: M27C64A PLCC32 PLCC32 package
Contextual Info: M27C64A 64 Kbit 8Kb x 8 UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 150ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.5V ± 0.25V HIGH SPEED PROGRAMMING

st m27c64a

Abstract: M27C64A STMicroelectronics date CODE m27c64a 1N914 PLCC32 FDIP28W
Contextual Info: M27C64A 64 Kbit 8Kb x8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 100ns ■ LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA ■ PROGRAMMING VOLTAGE: 12.5V ± 0.25V ■ HIGH SPEED PROGRAMMING

27C64A ROM

Abstract: 12V fluo 27C64A 27C64a sgs
Contextual Info: * 7 in SGS-THOMSON M27C64A CMOS 64K 8K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIM E: 150ns ■ CO M PATIBLE W ITH HIGH SPEED M IC R O ­ PROCESSORS, ZER O W AIT STATE ■ LOW POWER “C M O S” CONSUMPTION: - Active Current 30m A - Standby Current 100(iA

M27C64A

Abstract: PLCC32 EPROM 64kbit tra7
Contextual Info: M27C64A 64 Kbit 8Kb x 8 UV EPROM and OTP EPROM DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 100ns LOW POWER CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.5V ± 0.25V HIGH SPEED PROGRAMMING

1N914

Abstract: M27C64A PLCC32
Contextual Info: M27C64A 64K 8K x 8 UV EPROM and OTP ROM VERY FAST ACCESS TIME: 150ns COMPATIBLE with HIGH SPEED MICROPROCESSORS, ZERO WAIT STATE LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.5V ELECTRONIC SIGNATURE for AUTOMATED

1N914

Abstract: M27C64A PLCC32
Contextual Info: M27C64A 64K 8K x 8 UV EPROM and OTP EPROM FAST ACCESS TIME: 150ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.5V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING HIGH SPEED PROGRAMMING (less than 1 minute)

1T4 tube

Abstract: 1N914 M27C64A
Contextual Info: SG S -TH O M S O N ^7#» M27C64A liii]0 [S©ElLi §TO(S R!]0©S 64K (8K x 8) UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 150ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS’ CONSUMPTION: - Active Current 30mA - Standby Current 1OOjaA

VA00835

Abstract: M27C64A
Contextual Info: r=J * 7M. SGS-THOMSON K5ilD gK I[LI(gTÌ ©D!!]D(gi M27C64A CMOS 64K (8K x 8 UV EPROM ABBREVIATED DATA • VERY FAST ACCESS TIME: 150ns ■ COMPATIBLE with HIGH SPEED MICROPRO­ CESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA

M27C64A

Abstract: PLCC32 132A-6 PLCC32 package FDIP28W
Contextual Info: M27C64A 64 Kbit 8Kb x 8 UV EPROM and OTP EPROM DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 100ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.5V ± 0.25V HIGH SPEED PROGRAMMING

Contextual Info: SGS-THOMSON M27C64A ìl i 64K 8K x 8 UV EPROM and OTP EPROM FAST ACCESS TIME: 150ns LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100(1A PROGRAMMING VOLTAGE: 12.5V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING HIGH SPEED PROGRAMMING

am27c64a

Abstract: st m27c64A STMicroelectronics date CODE m27c64a
Contextual Info: M27C64A 64 Kbit 8Kb x8 UV EPROM and OTP EPROM Feature summary • 5V ± 10% supply voltage in Read operation ■ Access time: 100ns ■ Low power “CMOS” consumption: – Active Current 30mA – Standby Current 100µA ■ ■ ) s ( ct 28 u d o Programming voltage: 12.5V ± 0.25V

JESD97

Abstract: M27C64A PLCC32 st m27c64A
Contextual Info: M27C64A 64 Kbit 8Kb x8 UV EPROM and OTP EPROM Feature summary • 5V ± 10% supply voltage in Read operation ■ Access time: 100ns ■ Low power “CMOS” consumption: – Active Current 30mA – Standby Current 100µA ■ Programming voltage: 12.5V ± 0.25V

Contextual Info: *JÆ. SG S-TH O M SO N Rfilü»I[LIW H gi M27C64A 64K (8K x 8 UV EPROM and OTP EPROM • FAST ACCESS TIME: 150ns ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100pA ■ PROGRAMMING VOLTAGE: 12.5V ■ ELECTRONIC SIGNATURE for AUTOMATED

256k x8 SRAM 5V

Abstract: ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A D) OTP Memory - 5V range Type M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 M27C801 Size 64K 256K 256K 512K 1 Meg 1 Meg 2 Meg 4 Meg 4 Meg 4 Meg 8 Meg Organisation Access Time ns)

12V fluo

Contextual Info: / = T S C S -T H O M S O N * 7 # m m iiijw û im s M27C64A CMOS 64K 8K x 8 UV EPROM • VERY FAST ACCESS TIME: 150ns ■ COMPATIBLE with HIGH SPEED MICROPRO­ CESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|iA

MK48T87B24

Abstract: ST24C02CB1 MK48T18B15 M48Z32Y-100PC1 M2764AF1 MK48Z02B-20 MKI48Z12B15 ST24C01CB1 MK48Z02B-25 ST24C16CM1TR
Contextual Info: •y , . r i'. " - L. - S .• u _ NON VOLATILE MÉMBMES CMOS UV EPROM and OTP ROM Size 64K 256K Part N umber O rganisation Ucc ns Vcc Range Icc ! Stby Tem perature Range (°C) Package M27C64A-15F1 8K X 8 150 5V ± 10% 30mA / 1 00nA Oto 70 FDIP28W

ST m27c512

Abstract: TSOP44 Package SO32 m27c1001 plcc32 ST M27C256B Atmel 642 M27C4002 m27c4001 CROSS REFERENCE PLCC32 package EPROM m27c2001
Contextual Info: OTP and UV EPROM Products www.st.com/eprom Cross Reference Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions Introduction Long-term commitment STMicroelectronics will support the EPROM market in the long term with a strong commitment, guaranteeing manufacturing capability and high quality service. Continuous

1N914

Abstract: M2764A M27C64A
Contextual Info: M2764A NMOS 64 Kbit 8Kb x 8 UV EPROM NOT FOR NEW DESIGN • FAST ACCESS TIME: 180ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 35mA max ■ TTL COMPATIBLE DURING READ and PROGRAM ■ FAST PROGRAMMING ALGORITHM ■