M87C257 Search Results

Contextual Info: 5 7 . SGS-THOMSON M87C257 IM 0 ffi ô [SHIgM ( ô ) IM H ( 5 g AD D RESS LATCHED 256K (32K x 8) UV EPROM and OTP ROM • INTEGRATED ADDRESS LATCH ■ VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS’ CONSUMPTION:

M87C257

Abstract: 1N914 PLCC32
Contextual Info: M87C257 ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM INTEGRATED ADDRESS LATCH FAST ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED

M87C257

Abstract: FDIP28WB JESD97 PLCC32
Contextual Info: M87C257 Address Latched 256 Kbit 32Kb x8 UV EPROM and OTP EPROM Feature summary • 5V ± 10% supply voltage in Read operation ■ Integrated address latch ■ Access time: 45ns ■ Low power consumption: – Active Current 30mA – Standby Current 100µA

latched address eprom

Contextual Info: M87C257 ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM DATA BRIEFING INTEGRATED ADDRESS LATCH FAST ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED

87C257

Contextual Info: / = T SCS-THOMSON ^ 7 # M87C257 M O S M i[ L i( O T ® [ il § ADDRESS LATCHED CMOS 256K (32K x 8 UV EPROM and OTP ROM • INTEGRATED ADDRESS LATCH ■ VERY FAST ACC ESS TIME: 100ns ■ CO M PATIBLE W ITH HIGH SPEED M IC R O ­ PROCESSORS, ZER O W AIT STATE

Contextual Info: / T 7 SGS-THOMSON ^ 7 # . llD g ®llLI TO(s lfSlD(gi M87C257 ADDRESS LATCHED 256K (32K x 8) UV EPROM and OTP EPROM • INTEGRATED ADDRESS LATCH ■ FAST ACCESS TIME: 45ns ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|aA

Contextual Info: S G S -T H O M S O N G M87C257 KLC ì. LATCHED 256K 32Kx8 CMOS UV EPROM - OTP ROM • INTEGRATED ADDRESS LATCH. ■ VERY FAST ACCESS TIME : 100 ns. ■ COMPATIBLE TO HIGH SPEED MICROPRO­ CESSORS ZERO WAIT STATE. ■ LOW POWER "CMOS" CONSUMPTION : - Active Current 30mA

FDIP28WB

Abstract: JESD97 M87C257 PLCC32
Contextual Info: M87C257 Address Latched 256 Kbit 32Kb x8 UV EPROM and OTP EPROM Feature summary • 5V ± 10% supply voltage in Read operation ■ Integrated address latch ■ Access time: 45ns ■ Low power consumption: – Active Current 30mA – Standby Current 100µA

FDIP28W

Abstract: M87C257 PLCC32
Contextual Info: M87C257 ADDRESS LATCHED 256 Kbit 32Kb x 8 UV EPROM and OTP EPROM DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE in READ OPERATION INTEGRATED ADDRESS LATCH FAST ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA

Contextual Info: ¿ = 7 S C S -TH O M S O N ^ 7 # RfflflWSKLiOTriMMDSS M87C257 ADDRESS LATCHED CMOS 256K 32K x 8 UV EPROM and OTP ROM • INTEGRATED ADDRESS LATCH ■ VERY FAST AC C ESS TIME: 100ns ■ COMPATIBLE with HIGH S P EED MICROPRO­ C ESSO R S, ZERO WAIT STATE

87C257 "pin compatible"

Contextual Info: SGS-1H0MS0N m M87C257 ADDRESS LATCHED CMOS 256K 32K x 8 UV EPROM and OTP ROM ABBREVIATED DATA INTEGRATED ADDRESS LATCH VERY FAST ACCESS TIME: 100ns COMPATIBLE with HIGH SPEED MICROPRO­ CESSORS, ZERO WAIT STATE LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA

1N914

Abstract: M87C257 PLCC32
Contextual Info: M87C257 ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM INTEGRATED ADDRESS LATCH FAST ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED

256k x8 SRAM 5V

Abstract: ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A D) OTP Memory - 5V range Type M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 M27C801 Size 64K 256K 256K 512K 1 Meg 1 Meg 2 Meg 4 Meg 4 Meg 4 Meg 8 Meg Organisation Access Time ns)

Contextual Info: M87C257 Address Latched 256 Kbit 32Kb x8 UV EPROM and OTP EPROM Feature summary • 5V ± 10% supply voltage in Read operation ■ Integrated address latch ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P (

TSOP40 Flash

Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS

palce16v8 programming algorithm

Abstract: PH29EE010 ATMEL 620 93c46 EPROM NMC27C512AQ atmel 130 24c02 EP320I gal16v8 stag orbit 32 device list ph29ee010-xx gal16v8 programming
Contextual Info: Datum 18.11.1998 aus www.stagusa.com Orbit 48 Device Support List Version 25.0 Note ALL PLDs require Orbit 48 PLD Module Please consult device specific information at the end of this list. Stag Programmers Ltd. Silver Court, Watchmead, Welwyn Garden City, Herts AL7 1LT, U.K.

FDIP24W

Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS

Device-List

Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Contextual Info: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which

TOP SIDE MARKING M27C512

Contextual Info: QUALITY & RELIABILITY REPORT October 1995 to September 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

M27C512 SGS-THOMSON

Abstract: M2201 ST93C46
Contextual Info: QUALITY & RELIABILITY REPORT July 1995 to June 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

mgra

Abstract: PLCC32-32-LEAD M87C257-20F1 MGRA 21 M87C257-12F1
Contextual Info: SGS-THOMSON ILiCTtFM O O S M 87C 257 LATCHED 256K 32Kx8 CMOS UV EPROM - OTP ROM • ■ ■ ■ ■ ■ ■ INTEGRATED ADDRESS LATCH. VERY FAST ACCESS TIME : 100 ns. COMPATIBLE TO HIGH SPEED MICROPRO­ CESSORS ZERO WAIT STATE. LOW POWER "CMOS" CONSUMPTION :

PLCC32

Abstract: M27C M27W101 M27W102 M27W201 M27W401 M27W402 M27W512 M27W801 TSOP32
Contextual Info: OTP and UV EPROMs New Expanded Range ADVANCED PRODUCTS - DEPENDABLE SOLUTION The ST range of OTP and UV EPROMs is one of the widest in the world. Densities from 16 Kbit to 32 Mbit, plastic and ceramic windowed packages - both surface mounting and through hole standard 5V and low voltage, 3V, operation.

GL 6201

Abstract: PLCC32 M27C M27W101 M27W102 M27W201 M27W401 M27W402 M27W512 M27W801
Contextual Info: OTP and UV EPROMs New Expanded Range ADVANCED PRODUCTS - DEPENDABLE SOLUTION The ST range of OTP and UV EPROMs is one of the widest in the world. Densities from 16 Kbit to 32 Mbit, plastic and ceramic windowed packages - both surface mounting and through hole standard 5V and low voltage, 3V, operation.

ram 2015

Abstract: M93C56 M27256 M2764A M27C64A QRR9804 M29F105 Part Marking STMicroelectronics flash memory M87C257 m29f002
Contextual Info: QRR9804 QUALITY & RELIABILITY REPORT January 1998 to December 1998 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and