0820R Search Results

K6X1008C2D-GF55

Abstract: K6X1008C2D-TF55 K6X1008C2D-TB55 K6X1008C2D-F samsung k6x1008c2d K6X1008C2D-TF70
Contextual Info: Preliminary CMOS SRAM K6X1008C2D Family Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 15, 2002 Preliminary 0.1 Revised - Deleted 32-TSOP1-0820R Package Type. - Added Commercial product.

K6X1008

Abstract: K6X1008T2D K6X1008T2D-B K6X1008T2D-F K6X1008T2D-Q SAMSUNG K6X1008T2D-TF70 K6X1008T2D-PF70
Contextual Info: K6X1008T2D Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 15, 2002 Preliminary 0.1 Revised - Deleted 32-TSOP1-0820R, 32-TSOP1-0813.4F/R Package Type. - Added Commercial product.

K6X1008C2D-GF55

Abstract: k6x1008c2d-pf55 K6X1008C2D-GF70 k6x1008c2d-bf55 K6X1008C2D-DF55 K6X1008-C2D-BF55 K6X1008C2D-BF70 samsung k6x1008c2d K6X1008C2D-TF70 K6X1008C2D
Contextual Info: K6X1008C2D Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 15, 2002 Preliminary 0.1 Revised - Deleted 32-TSOP1-0820R Package Type. - Added Commercial product.

K6X1008C2D-GF70

Abstract: K6X1008C2D-PQ701 55ns K6X1008C2D K6X1008C2D-DF55 K6X1008C2D-GF55 K6X1008C2D-TF70 K6X1008C2D-B K6X1008C2D-F K6X1008C2D-Q
Contextual Info: K6X1008C2D Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 15, 2002 Preliminary 0.1 Revised - Deleted 32-TSOP1-0820R Package Type. - Added Commercial product.

K6X1008T2D-GF70

Abstract: K6X1008T2D-TB551 K6X1008T2D-TF70 GF551 TF85 K6X1008T2D K6X1008T2D-B K6X1008T2D-F K6X1008T2D-Q SAMSUNG K6X1008T2D-TF70
Contextual Info: Preliminary CMOS SRAM K6X1008T2D Family Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 15, 2002 Preliminary 0.1 Revised - Deleted 32-TSOP1-0820R, 32-TSOP1-0813.4F/R Package Type.

K6X1008T2D-BF852

Abstract: samsung 822 K6X1008T2D-B K6X1008T2D-F K6X1008T2D-Q K6X1008T2D 32-SOP
Contextual Info: K6X1008T2D Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 15, 2002 Preliminary 0.1 Revised - Deleted 32-TSOP1-0820R, 32-TSOP1-0813.4F/R Package Type. - Added Commercial product.

68 1103

Abstract: KM681000BL A14F
Contextual Info: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION The KM 681000BUBL-L is a 1,048,576-bit high-speed Static Random Access Memory organized as131,072 words by 8 bits. The device is fabricated using Samsung's advanced

Contextual Info: KM681OOOBLI/BLI-L CMOS SRAM 131,072 W O RD x 8 Bit C M O S Static RAM<mdustnai Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85° C • Fast Access Time: 7 0 ,100ns max.) • Low Power Dissipation Standby (CMOS) : 550;<W(max.)

Contextual Info: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. • Low Power Dissipation Standby (CMOS): 550(iW (max.) L Version 110fiW (max.) U- Version Operating : 385mW(max.) • Single 5V±10% Power Supply

Contextual Info: KM681000B Family CMOS SRAM Document Title 128K x8 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft for com m ercial product - Com mercial Product only O ctober 28th, 1992 Prelim inary 0.1 - Initial draft for Extended/Industrial Product

Contextual Info: CM O S SRAM KM681OOOBLI/BLI-L 1 3 1 ,0 7 2 W O fíD X 8 B it C M O S S ts tic R A M industriai Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85° C • Fast Access Time: 7 0 ,100ns(max.) • Low Power Dissipation

Contextual Info: Preliminary KM68FU2000, KM68FS2000, KM68FR2000 Family CMOS SRAM 256Kx8 bit Super Low Vcc High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um Full CMOS The KM68FU2000, KM68FS2000 and KM68FR2000 • Organization : 256K x 8

2183A

Contextual Info: KM68V1000C, KM68U1000C Family CMOS SRAM 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4|jm CMOS • Organization : 128K x 8 • Power Supply Voltage KM68V1000C family : 3.3V ± 0.3V KM68U1000C family : 3.0V ± 0.3V

km681000clg-5l

Abstract: KM681000CLP-7 KM681000CLP-7L KM681000CLT-5L KM681000C KM681000CL KM681000CLI KM681000CL-L KM681000CLP7L
Contextual Info: PRELIMINARY KM681000C Family CMOS SRAM Document Title 128K x8 bit Low Power CMOS Static RAM Revision History History Draft Date Remark 0.0 Initial draft November 22, 1995 Design target 0.1 First revision - Seperate read and write at ICC, ICC1 ICC = ICC1 → Read : 15mA, Write : 35mA

0820R

Abstract: KM681000CLG-7L KM681000CLGI-7L 32-TSOP1-R KM681000CLP-7 KM681000CLT-7L KM681000CLG
Contextual Info: PRIORITY KM681000C Family CMOS SRAM Document Titie 128K x8 bit Low Power CMOS Static RAM Revision History Revision No. History Pratt Date Remark 0.0 Initial draft November 22th 1995 Design target 0.1 First revision - Separate read and write at Icc, Icci Icc = Icci - * Read : 15mA, Write : 35mA

KM68U1000BLG8L

Abstract: 32SOP
Contextual Info: KM68V1000B, KM68U1000B Family CMOS SRAM 128Kx8 bit Low Pow er & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6» «CMOS • Organization : 128K x8 • Power Supply Voltage KM68V1000B family: 3.3V« *0.3V KM68U1000B family: 3.0V- -0.3V

dg312

Contextual Info: KM6 8 FV 1OOO CMOS SRAM ELECTRONICS 128Kx8 bit Super Low Vcc High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um Full CMOS The KM68FV1000, KM68FS1000 and KM68FR1000 • Organization : 128K x 8 family are fabricated by SAMSUNG'S advanced Full

K6T1008C2E-GB70

Abstract: K6T1008C2E-DL70 K6T1008C2E-TB55 k6t1008c2e 0855 K6T1008C2E-DB55 K6T1008C2E-DB70 K6T1008C2E-P K6T1008C2E-F k6t1008c2 K6T1008C2EGB70
Contextual Info: K6T1008C2E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target October 12, 1998 Preliminary 1.0 Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin from industrial product.

KM681000BLE

Contextual Info: CMOS SRAM KM681000BLE / BLE-L 128Kx8 B it Extended Temperature Range Operating SRAM GENERAL DESCRIPTION FEATURES • E x te n d e d T e m p e ra tu r e R a n g e : -2 5 to 85°C T h e K M 6 8 1 0 0 0 B L E /B L E -L is a 1 ,0 4 8 ,5 7 6 -b it h ig h -s p e e d

Contextual Info: KM68V1000C, KM68U1000C Family CMOS SRAM Document Title 128K x8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. 0.0 History Initial draft Draft Data Remark July 3rd 1996 Preliminary 1.0 Finalize - Increased I s b , I dr Commercial part = 1 0 jj.A

K6L1008V2C-TF70

Abstract: KM68U1000C KM68V1000C K6L1008V2C K6L1008V2C-RB70 K6L1008V2C-TB70 STSOP
Contextual Info: K6L1008V2C, K6L1008U2C Family CMOS SRAM Document Title 128K x8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 3, 1996 Preliminary 1.0 Finalize - Increased ISB, IDR Commercial part = 10µA

62128 SRAM

Abstract: k6t1008c2 K6T1008C2C-DB70 k6t1008c2c CY62128LL-70SI HY628100BLLG-55 HY628100BLG-55 cy62128ll-55sc K6T1008C2C-GL70 RAM 62128
Contextual Info: Approved Manufacturers List for Web Parts Part Number: 100-0007 Rev ECO# A E11137 REVISION HISTORY Description of Change Date Apvd By Initial Release Approved Manufacturers: NOTE: In some cases, components under the same part number may originate from various manufacturers,

K6T1008C2E

Abstract: K6T1008C2E-DL70 K6T1008C2E-B K6T1008C2E-F K6T1008C2E-L K6T1008C2E-P k6t1008c2e-gb55 K6T1008C2E-GB70
Contextual Info: K6T1008C2E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target October 12, 1998 Preliminary 1.0 Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin from industrial product.

K6T1008U2C

Abstract: K6T1008U2C-B K6T1008V2C K6T1008V2C-B KM68U1000C KM68V1000C
Contextual Info: K6T1008V2C, K6T1008U2C Family CMOS SRAM Document Title 128K x8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 3, 1996 Preliminary 1.0 Finalize - Increased ISB, IDR Commercial part = 10µA