BQ4013 Search Results

Contextual Info: bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 128 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles

bq4013MA-120

Abstract: bq4013Y bq4013YMA-120 bq4013
Contextual Info: bq4013/Y 128Kx8 Nonvolatile SRAM Features General Description ➤ Data retention for at least 10 years without power The CMOS bq4013/Y is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy

Contextual Info: bq4013/bq4013Y BENCHMARQ 128Kx8 Nonvolatile SRAM Features General Description > Data retention in the absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The in teg ral control circuitry and lithium energy source provide reli­

Contextual Info: Not Recommended For New Designs bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 128 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During

bq4013

Abstract: bq4013Y
Contextual Info: bq4013/Y 128Kx8 Nonvolatile SRAM Features ➤ Data retention for at least 10 years without power ➤ Automatic write-protection during power-up/power-down cycles ➤ Conventional SRAM operation, including unlimited write cycles ➤ Internal isolation of battery before power application

bq4013YMA-120N

Abstract: bq4013 bq4013Y Benchmarq BENCHMARQ MICROELECTRONICS bq4013ma
Contextual Info: bq4013/bq4013Y 128Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy

bq4013

Abstract: bq4013MA-120 bq4013Y bq4013YMA-120
Contextual Info: bq4013/Y 128Kx8 Nonvolatile SRAM Features General Description ➤ Data retention for at least 10 years without power The CMOS bq4013/Y is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy

Contextual Info: Not Recommended For New Designs bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 128 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During

BO42

Contextual Info: bq4013/bq4013Y BENCHMARQ h 128Kx8 Nonvolatile SRAM Features General Description > Data retention in the absence of power The CMOS bq40l3 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy

Contextual Info: bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 128 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles

Contextual Info: bq4013/Y 128Kx8 Nonvolatile SRAM Features General Description ➤ Data retention for at least 10 years without power The CMOS bq4013/Y is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy

bq4013

Abstract: bq4013LY bq4013MA-120 bq4013MA-85 bq4013Y bq4013YMA-70 bq4013YMA-85
Contextual Info: bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 128 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles

Contextual Info: benchuarû bflE D microelec • 137flfllci DDOlSai 135 « B E N b q 4 0 1 3 /bq 4 0 1 3 Y BENCHMARQ 128Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized

Contextual Info: bq4013/bq4013Y BENCHMARQ 128Kx8 Nonvolatile SRAM Features > Data retention in the absence of power >- Automatic write-protection during power-uj/power- down cycles >• Industry-standard 32-pin 128K x 8 pinout >- Conventional SRAM operation; unlimited write cycles

Contextual Info: bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 128 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles

Contextual Info: bq4013 /bq4013 Y fa BENCHMARQ 128Kx8 Nonvolatile SRAM Features General Description ► D ata retention in the absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. Ih e integral control circuitry and lithium energy

bq4013ma

Contextual Info: bq4013/bq4013Y 128Kx8 Nonvolatile SRAM Features General Description > D ata retention in th e absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy

Contextual Info: bq4013/bq4013Y BENCHMARQ 128Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy

Contextual Info: bq4013/bq4013Y 128Kx8 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The in te g r a l co n tro l c irc u itry an d

Contextual Info: bq4013/Y ili U N IT R O D E - 128Kx8 Nonvolatile SRAM Features General Description >• D ata rete n tio n for a t le a st 10 years without power The CMOS bq4013/Y is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral

bq4013

Abstract: bq4013Y
Contextual Info: bq4013/Y 128Kx8 Nonvolatile SRAM Features ➤ Data retention for at least 10 years without power ➤ Automatic write-protection during power-up/power-down cycles ➤ Conventional SRAM operation, including unlimited write cycles ➤ Internal isolation of battery before power application

bq4013

Abstract: bq4013LY bq4013MA-120 bq4013MA-85 bq4013Y bq4013YMA-70 bq4013YMA-85
Contextual Info: bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 128 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles

Contextual Info: Not Recommended For New Designs bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 128 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During

Contextual Info: b bq4013/bq4013Y BENCHMARQ. 128Kx8 Nonvolatile SRAM Features General Description ► D ata retention in the absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 b its. The i n t e g r a l c o n tr o l c ir c u it r y a n d