FM18L08 Search Results

Contextual Info: FM18L08 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 10 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Superior to Battery-Backed SRAM

28v020

Abstract: FM28V020 AN108 FM18L08
Contextual Info: AN108 Differences in FM18L08 and FM28V020 Applies to 256Kb Parallel F-RAM Devices DESCRIPTION This document points out the differences the FM18L08 and FM28V020 parallel F-RAM devices. For most designs, the FM28V020 device can be considered equivalent or better than the FM18L08. The two

FM18L08-70-SG

Abstract: FM18L08 FM18L08-70-P FM18L08-70-S FM18L08-70-TG FM18L08-70 FM18L08-70-PG
Contextual Info: FM18L08 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 45 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process SRAM & EEPROM Compatible

FM18L08-70-S

Abstract: 1E16 FM18L08 FM18L08-70-P MS-013
Contextual Info: Preliminary FM18L08 256Kb 2.7-3.6V Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 10 year data retention at 85° C • Unlimited read/write cycles • NoDelay write • Advanced high-reliability ferroelectric process

FM18L08-70-S

Abstract: 32kx8 sram FM18L08 FM18L08-70-P MS-011 MS-013
Contextual Info: Product Preview FM18L08 256Kb 3V Bytewide FRAM Memory Features 256K bit Ferroelectric NonVolatile RAM • Organized as 32,768 x 8 bits • 10 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: Product Preview FM18L08 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric NonVolatile RAM • Organized as 32,768 x 8 bits • 10 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

AN103

Abstract: AN-103 FM18L08 FM20L08 TSOP32 TSOPI
Contextual Info: AN-103 32-pin TSOP Pinouts Applies to FM18L08 and FM20L08 Devices DESCRIPTION The FM18L08 32Kx8 and FM20L08 (128Kx8) devices are offered in the 32-pin TSOP-I package. The package body size is a 8.0 x 13.4 mm and the pin pitch is 0.5 mm. The two devices are not pin compatible

fram

Abstract: FM1808 FM1608 FM18L08
Contextual Info: Application Note Replacing SRAM with FRAM Parallel FRAM Design Considerations Ramtron offers three FRAM devices that are pin compatible with industry standard bytewide x8 SRAMs. The FM1608 is an 8Kx8 and the FM1808 and FM18L08 are 32Kx8 devices, all of which may be used

FM18L08-70-SG

Abstract: fm18L08-70sg tsop package MSL FM18L08-70-S FM18L08 FM18L08-70-P FM18L08-70-TG FM18L0870SG FM18L08-70
Contextual Info: FM18L08 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 45 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Superior to Battery-Backed SRAM

Contextual Info: FM18L08 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 10 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Superior to Battery-Backed SRAM

FM18L08-70-S

Abstract: TCA 700 FM18L08 FM18L08-70-P FM18L08-70-SG
Contextual Info: FM18L08 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 10 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process SRAM & EEPROM Compatible

Contextual Info: Preliminary Data Sheet FM18L08 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric NonVolatile RAM • Organized as 32,768 x 8 bits • 10 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM18L08

Abstract: FM18L08-70-P FM18L08-70-S MS-011 MS-013 BBSRAM
Contextual Info: FM18L08 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 10 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Superior to Battery-Backed SRAM

FM18L08-70-S

Abstract: ttl cmos advantages disadvantages FM18L08 FM18L08-70-P MS-011 MS-013 FM18L08-70
Contextual Info: Product Preview FM18L08 256Kb Bytewide 3V FRAM Memory Features 256K bit Ferroelectric NonVolatile RAM • Organized as 32,768 x 8 bits • 10 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM28V100-TG

Abstract: FM28V100-TGTR tca 335 A
Contextual Info: FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8  High Endurance 100 Trillion 1014 Read/Writes  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process

Contextual Info: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

FM18L08

Abstract: FM20L08 FM20L08-60-TG
Contextual Info: Preliminary FM20L08 1Mbit Bytewide FRAM Memory – Extended Temp. Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process

Contextual Info: Preliminary FM20L08 1Mbit Bytewide FRAM Memory – Extended Temp. Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process

FM22L16-55-TG

Abstract: FM20L08 FM22L16 256KX16
Contextual Info: Preliminary FM22L16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process

FM28V020-SG

Abstract: FM28V020-SGTR FM28V020 FM18L08
Contextual Info: Preliminary FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32Kx8 • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

FM18L08

Abstract: FM20L08 FM20L08-60-TG
Contextual Info: Preliminary FM20L08 1Mbit Bytewide FRAM Memory – Industrial Temp. Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process

Contextual Info: Preliminary FM20L08 1Mbit Bytewide FRAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

Contextual Info: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

Contextual Info: FM22L16 4Mbit Asynchronous F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process