FM20L08 Search Results

FM18L08

Abstract: FM20L08 FM20L08-60-TG
Contextual Info: Preliminary FM20L08 1Mbit Bytewide FRAM Memory – Extended Temp. Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process

Contextual Info: Preliminary FM20L08 1Mbit Bytewide FRAM Memory – Extended Temp. Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process

TCA 290

Abstract: FM20L08-60-TG1 FM20L08-60 FM18L08 FM20L08 FM20L08-60-TG
Contextual Info: Preliminary FM20L08 1Mbit Bytewide FRAM Memory – Industrial Temp. Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process

Contextual Info: Preliminary FM20L08 1Mbit Bytewide FRAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

Contextual Info: Preliminary FM20L08 1Mbit Bytewide FRAM Memory – Extended Temp. Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process

FM18L08

Abstract: FM20L08 FM20L08-60-TG
Contextual Info: Preliminary FM20L08 1Mbit Bytewide FRAM Memory – Extended Temp. Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process

FM20L08-60-TGC

Abstract: FM18L08 FM20L08
Contextual Info: Preliminary FM20L08 1Mbit Bytewide FRAM Memory – Extended Temp. Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process

FM28V100

Abstract: 28V100 AN109 FM20L08
Contextual Info: AN109 Differences in FM20L08 and FM28V100 Applies to 1Mb Parallel F-RAM Devices DESCRIPTION This document points out the differences the FM20L08 and FM28V100 parallel F-RAM devices. For most designs, the FM28V100 device can be considered equivalent or better than the FM20L08. The two

FM20L08

Abstract: AN-106 FM28V100 pin diagram of 32
Contextual Info: AN-106 Migrating from FM20L08 to FM28V100 How to Create a PCB for Compatibility DESCRIPTION The FM20L08 128Kx8 and FM28V100 (128Kx8) devices are offered in the 32-pin TSOP-I package. The package body size is 8.0 x 13.4 mm and the pin pitch is 0.5 mm. The two devices are not pin

Contextual Info: Preliminary FM20L08 1Mbit Bytewide FRAM Memory – Commercial Temp. Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process

Contextual Info: Preliminary FM20L08 1Mbit Bytewide FRAM Memory – Commercial Temp. Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process

FM28V100-TG

Abstract: FM28V100-TGTR tca 335 A
Contextual Info: FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8  High Endurance 100 Trillion 1014 Read/Writes  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process

FM20L08

Abstract: FM22L16 FM22L16-55-TG FM22L16-5 e1 fram
Contextual Info: Preliminary FM22L16 4Mbit FRAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process

FM22L16-55-TG

Abstract: FM20L08 FM22L16 MS-024g TSOP-II 44 Recommended PCB Footprint
Contextual Info: Preliminary FM22L16 4Mbit FRAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process

FM28V100

Contextual Info: Preliminary FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • High Endurance 100 Trillion 1014 Read/Writes • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process

FM22LD16-55-BGTR

Abstract: FM22LD16-55-BG
Contextual Info: FM22LD16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16  Configurable as 512Kx8 Using /UB, /LB  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation to 40MHz  Advanced High-Reliability Ferroelectric Process

Contextual Info: Pre-Production FM21L16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16 • Configurable as 256Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay™ Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process

FM20L08

Abstract: FM22LD16 FM22LD16-55-BG
Contextual Info: Preliminary FM22LD16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process

FM28V100-TG

Abstract: FM28V100 FM28V100-T FM18L08 FM20L08 A16-A3
Contextual Info: Preliminary FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • High Endurance 100 Trillion 1014 Read/Writes • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process

"Ferroelectric RAM"

Abstract: FM20L08 "content addressable memory" array memory blocks
Contextual Info: 28 the machinist oct 2006 DesignTechnology Technical memory Mike Alwais reviews the design considerations in implementing a single-chip memory environment esign engineers working on embedded systems usually select memories based on the intended memory contents: A simple division of

FM21L16-60-TG

Abstract: FM21L16-60-TGTR FM18L08 FM20L08 FM21L16 JESD22-A114-F
Contextual Info: Pre-Production FM21L16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16 • Configurable as 256Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process

FM21L16

Abstract: FM18L08 FM20L08 FM21L16-60-TG
Contextual Info: Preliminary FM21L16 2Mbit FRAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16 • Configurable as 256Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process