TSOPI Search Results

Contextual Info: SDRAM AS4SD2M32 512K x 32 x 4 Banks 64-Mb PIN ASSIGNMENT (Top View) Synchronous SDRAM 86-Pin TSOPII FEATURES • Full Military temp (-55°C to 125°C) processing available • Configuration: 512K x 32 x 4 banks • Fully synchronous; all signals registered on positive

16Mx8

Abstract: pc133 SDRAM DIMM W9D332647LA-333 079R 32X64 32X64 144 pin
Contextual Info: REVISIONS DATE REV I. DESCRIPTION: DESCRIPTION ZONE 6/29/01 LUISA T Ÿ W9D332647LA-333 is a 32Mx64 industry standard 168-pin PC-133 SDRAM DIMM Ÿ Manufactured with 16 16Mx8 400-mil TSOPII-54 PC-133 Synchronous DRAM devices of 12-row, 10-column, 4-bank addressing.

222k

Abstract: 079R PC-100 PC100-222 KO9018
Contextual Info: REVISION DATE REV DESCRPTION ZONE APPVD 6/26/01 III. TIMING I. DESCRIPTION: Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ W9Q316727KD-222K is a 16Mx72 industry standard 168-pin PC100-222 SDRAM ECC DIMM Manufactured with 18 NEC ELPIDA 8Mx8 400-mil TSOPII-54 100 MHz Synchronous DRAM devices of 12-row, 9-column, 4 -bank addresing.

100MHZ

Abstract: 133MHZ PC200 V827332U04S
Contextual Info: MOSEL VITELIC V827332U04S 2.5 VOLT 32M x 72 HIGH PERFORMANCE REGISTERED ECC DDR SDRAM MODULE PRELIMINARY Features Description • 184 Pin Registered 33,554,432 x 72 bit Organization DDR SDRAM Modules ■ Utilizes High Performance 16M x 8 DDR SDRAM in TSOPII-66 Packages

Contextual Info: •HYUNDAI HYM532124A W-Series 1M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532124A is a 1M x 32-bit EDO mode CMOS DRAM module consisting of two HY5118164B in 42/42 pin S O J or 44/50 pin TSOPII on a 72 pin glass-epoxy printed circuit board. Two 0.01 nF decoupling capacitors are

HYM53

Contextual Info: • HYUNDAI HYM536A810A M-Series 8M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536A81OA is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of eighteen HY5117400A in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each

Contextual Info: • HYUNDAI HYM532224A E-Series 2M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532224A is a 2M x 32-bit EDO m ode CMOS DRAM m odule consisting of four HY5117804B in 28/28 pin SOJ or TSOPII and an AND gate in 16 pin SOP on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling

Contextual Info: "HYUNDAI HYM532220A W-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220A is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of four HY5118160B in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mourtted for

Contextual Info: •HYUNDAI HYM53221OA E-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM53221 OA is a 2M x 32-bit Fast Page mode CMOS DRAM module consisting of four HY5117800B in 28/28 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for

K4E640811D

Abstract: K4E660811D
Contextual Info: K4E660811D,K4E640811D CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-50 or -60), package type (SOJ or TSOPII) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.

Contextual Info: V826616J24SC 16M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE Features Description • 184 Pin Unbuffered 16,777,216 x 64 bit Organization DDR SDRAM Modules ■ Utilizes High Performance 16M x 16 DDR SDRAM in TSOPII-66 Packages ■ Single +2.5V ± 0.2V Power Supply

100MHZ

Abstract: 133MHZ PC200 V827332K04SATG V827332K04SXXX
Contextual Info: MOSEL VITELIC V827332K04SATG 2.5 VOLT 32M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE PRELIMINARY Features Description • 184 Pin Unbuffered 33,554,432 x 72 bit Organization DDR SDRAM Modules ■ Utilizes High Performance 16M x 8 DDR SDRAM in TSOPII-66 Packages

Contextual Info: ESMT M13S128168A Operation temperature condition -40°C~85°C Revision History Revision 1.0 03 Jan. 2007 - Original Revision 1.1 (19 Mar. 2008) - Add BGA package - Modify the waveform of Power up & Initialization Sequence - Modify the θ value of TSOPII package dimension

Contextual Info: ESMT M24L416256SA Revision History Revision 1.0 04 Jul. 2007 -Original Revision 1.1 (10 Sep. 2007) - Modify Vcc (max) =3.3V to 3.6V Revision 1.2 (27 Feb. 2008) - Add 44-pin TSOPII package - Add Avoid timing Revision 1.3 (24 Mar. 2008) - Add I-grade for TSOPII package

Contextual Info: V437432E24VD 3.3 VOLT 32M x 72 HIGH PERFORMANCE REGISTERED SDRAM ECC MODULE Features Description • 168 Pin Registered ECC 33,554,432 x 72 bit Oganization SDRAM Modules ■ Utilizes High Performance 32M x 8 SDRAM in TSOPII-54 Packages ■ Fully PC Board Layout Compatible to INTEL’S

Contextual Info: V826632B24SA 256 MB 200-PIN DDR UNBUFFERED SODIMM 32M x 64 Features Description • JEDEC 200 Pin DDR Unbuffered Small-Outline, Dual In-Line memory module SODIMM ; 33,554,432 x 64 bit organization. ■ Utilizes High Performance 16M x 16 DDR SDRAM in TSOPII-66 Packages

Contextual Info: V827464N24SC 2.5 VOLT 64M x 72 HIGH PERFORMANCE REGISTERED ECC DDR SDRAM MODULE Features Description • 184 Pin Registered 67,108,864 x 72 bit Organization DDR SDRAM Modules ■ Utilizes High Performance 64M x 4 DDR SDRAM in TSOPII-66 and FBGA Package ■ Single +2.5V ± 0.2V Power Supply

Contextual Info: V826616J24SA 16M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE Features Description • 184 Pin Unbuffered 16,777,216 x 64 bit Organization DDR SDRAM Modules ■ Utilizes High Performance 16M x 16 DDR SDRAM in TSOPII-66 Packages ■ Single +2.5V ± 0.2V Power Supply

Contextual Info: V826765K24SA 1GB 184-PIN DDR UNBUFFERED DIMM 128M x 64 Features Description • 184 Pin Unbuffered 134,217,728 x 64 bit Organization DDR SDRAM Modules ■ Utilizes High Performance 64M x 8 DDR SDRAM in TSOPII packages. ■ Single +2.5V ± 0.2V Power Supply

Contextual Info: V826664K24SC 64M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE Features Description • 184 Pin Unbuffered 67,108,864 x 64 bit Organization DDR SDRAM Modules ■ Utilizes High Performance 32M x 8 DDR SDRAM in TSOPII-66 Packages ■ Single +2.5V ± 0.2V Power Supply

HYM532414

Abstract: HY5117404
Contextual Info: •HYUN D AI HYM532414 N-Series 4M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532414 is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404A in 24/26 pin TSOPII on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted

Contextual Info: 16Mx64 bits PC100 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M656B L T6 Series DESCRIPTION The HYM72V16M656B(L)T6 -Series are high speed 3.3-Volt Synchronous DRAM Modules composed of four 16Mx16 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit EEPROM on a 144-pin Zig Zag Dual pin glass-epoxy

"32Mx32" DRAM 72-pin simm

Abstract: HANBit 72-pin SIMM HMD32M32M16G 1760
Contextual Info: HANBit HMD32M32M16G 128Mbyte 32Mx32 72-pin Fast Page Mode 4K Ref. SIMM Design 5V Part No. HMD32M32M16G GENERAL DESCRIPTION The HMD32M32M16G is a 32M x 32bit dynamic RAM high-density memory module. The module consists of sixteen CMOS 16M x 4bit DRAMs in 32-pin TSOPII packages mounted on a 72-pin, double-sided, FR-4-printed circuit board. A

V43658R04VATG-75PC

Contextual Info: MOSEL VITELIC V43658R04VATG-75PC 3.3 VOLT 8M x 64 using 8M x 16 PC133 UNBUFFERED SDRAM MODULE PRELIMINARY Features Description • 168 Pin Unbuffered 8,388,608 x 64 bit Oganization SDRAM DIMM ■ Utilizes High Performance 128 Mbit, 8M x 16 SDRAM in TSOPII-54 Packages