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Samsung Electronics

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
K4E640811D		Samsung Electronics	8M x 8-Bit CMOS Dynamic RAM with Extended Data Out Data Sheet	Original	PDF	422.18KB	21

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K4E640811D Abstract: K4E660811D Contextual Info: K4E660811D,K4E640811D CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-50 or -60), package type (SOJ or TSOPII) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.	Original	k4e660811d k4e640811d k4e660811d-jc 400mil	PDF

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K4E640811D

Abstract: K4E660811D
Contextual Info: K4E660811D,K4E640811D CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-50 or -60), package type (SOJ or TSOPII) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.

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k4e660811d k4e640811d k4e660811d-jc 400mil

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