605MW Search Results

TC5117800bnt-60

Abstract: TC5117800B
Contextual Info: TOSHIBA TC5117800BNJ/BNT-60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM Description The TC5117800BNT is the fast page dynamic RAM organized 2,097,152 words by 8 bits. The TC5117800BNT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,

TC514265DJ

Abstract: TC514265D TC514265 SOJ40-P-400
Contextual Info: TOSHIBA TC514265DJ/DFT-50/60/70 PRELIMINARY 262,144 WORD X 16 BIT EDO HYPER PAGE DYNAMIC RAM Description TheTC514265DJ/DFT is an EDO (hyper page) dynamic RAM organized as 262,144 words by 16 bits. TheTC514265DJ/ DFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide oper­

MSM5117400

Contextual Info: O K I Semiconductor MSM5117400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESC R IPTIO N T he M SM 5117400 is a n ew gen eratio n d yn am ic org an ized as 4,194,304-word x 4-bit. T he technology used to fabricate the M SM 5 1 17400 is O K I's C M O S silicon gate process technology.

HY5116100B

Contextual Info: HY5116100B Series -HYUNDAI 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100B is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. TheHY5116100B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: HY5116400A Series •{HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating

Contextual Info: H Y 5 1 1 6 1 O O A •HYUNDAI S e r ie s 16Mx 1-bit CMOS DRAM DESCRIPTION The HY51161 OOA is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51161 OOA utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: • • H Y U N D A I H Y 5 1 1 7 8 1 0 S e r ie s 2 M x 8-bit CMOS DRAM with WPB DESCRIPTION The HY5117810 is the new generation and fast dynamic RAM organized 2,097,152 x 8-bit. The HY5117810 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: TOSHIBA ' m ^0^7240 0020 34 1 R7b • TC5117800BNJ/BNT-60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM DRAM Description Features Key Parameters 2,097,152 word by 8 bit organization Fast access time and cycle time Single power supply of 5V±10% with a built-in VBB generator

GG41

Contextual Info: April 1993 Edition 2.1 FUJITSU DATA S H E E T M B 8 1 8 2 5 1 -70/-80 2097,152 Bits 262,144 x 8 Bits Multi-port CMOS Dynamic RAM The Fujitsu MB818251 is a fully decoded dual port CMOS Dynamic RAM (DRAM) organized as 262,144 words by 8 bits dynamic RAM port and 512 words by 8 bits serial

Contextual Info: FUJITSU March 1992 Edition 1.0 DATA SHEET M B 8 1 4 1 O O A -6 0 /-7 0 /-8 0 CMOS 4M x 1 BIT FAST PAGE MODE DRAM CMOS 4,194,304 x 1 BIT FAST PAGE MODE DYNAMIC RAM The Fujitsu MB814100A is a fully decoded CMOS Dynamic RAM DRAM that contains a total of 4,194,804 memory cells in a x1 configuration. The MB814100A features a “fast

MSM5117800

Abstract: MSM5117800C SOJ28
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

MSM5117800

Abstract: SOJ28
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

TASC 20-5

Abstract: M5M44265CJ M5M44265C-6
Contextual Info: MITSUBISHI LSIs MITSUBISHI LSIs M5M44265CJ,TP-5,-6,-7, M5M44265CJ,TP-5,-6,-7,-5S,-6S,-7S -5S,-6S,-7S EDO HYPER PAGE MODE 4194304-BIT (262144-WORD 16-BIT) DYNAMIC RAM EDO (HYPER PAGE MODE) 4194304-BIT (262144-WORD BY BY 16-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262144-word by 16-bit dynamic RAMs with

mb8117400

Contextual Info: FUJITSU Sepi zeliti Edition 2.0 DATA SHEET MB8117400-60/-70/-80 CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM The Fujitsu MB8117400 is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessfcle in 4-bit increments. The MB8117400 features a ’ fast page’ mode of

Contextual Info: HY5117404B,HY5116404B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

MSM5416125A

Contextual Info: E2L0049-17-Y1 ¡ Semiconductor MSM5416125A ¡ Semiconductor This version: Jan. 1998 MSM5416125A Previous version: Dec. 1996 131,072-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The OKI MSM5416125A is a 128K-word ¥ 16-bit dynamic RAM fabricated in OKI's CMOS silicon

KM418C256/L/SL-7

Contextual Info: SAMSUNG ELECTRONICS INC bME D KM418C256/L/SL • 7 T b 4 m 2 GGlBMTb 12=5 « S U G K CMOS DRAM 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM418C256/L/SL is a C MOS high speed 262,144 b it x 18 D ynam ic Random A ccess M em ory. Its

Contextual Info: CMOS DRAM KM418C256LL 256K x18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM418C256LL is a CMOS high speed 262,144 b it x 18 D ynam ic Random A cce ss M em ory. Its de sig n is o p tim ized fo r high perform ance ap p lica tio n s

km418c256

Contextual Info: KM418C256/USL CMOS DRAM 2 5 6 K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418C256/L/SL is a CMOS high speed 262,144 bit x 18 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: 512K x 8 SRAM MODULE SYS8512FKX - 55/70 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Description The SYS8512FKX is plastic 4M Static RAM Module housed in a standard 32 pin Dual-In-Line Low Profile package, organised as 512K x 8. The

Contextual Info: SYntaq limited 512K x. 8 SRAM MODULE SYS8512FK-55/70 Elm Road, West Chirton Industrial Estate, North Shields, NE29 8SE, ENGLAND. TEL +441912930519. FAX +441912590997 Issue 1.5 : May 1996 Description Features The SYS8512FK is plastic 4M Static RAM Module housed in a standard 32 pin Dual-ln-Line package

Contextual Info: ADS5481 ADS5482 ADS5483 www.ti.com. SLAS565C – JUNE 2008 – REVISED OCTOBER 2009 16-Bit, 80/105/135-MSPS Analog-to-Digital Converters

MSM5117180-70

Abstract: MSM5117180-80
Contextual Info: O K I Semiconductor MSM5 1 17180 _ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117180 is OKI's CMOS silicon gate process technology.

Contextual Info: December 2003 AS7C513B 5V 32Kx16 CMOS SRAM Features • Compatible to AS7C513A • Industrial and commercial temperature • Organization: 32,768 words × 16 bits • Center power and ground pins • High speed • 10/12/15/20 ns address access time • 5, 6, 7, 8 ns output enable access time