HY5116404B Search Results

Contextual Info: HY5117404B,HY5116404B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

HY5116404B

Abstract: HYM564404B HYM564404BNG HYM564404BTNG
Contextual Info: HYM564404B N-Series Buffered 4Mx64 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 4K-Refresh GENERAL DESCRIPTION The HYM564404B N-Series is a 4Mx64-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY5116404B in 24/26 pin SOJ or TSOP-II and two 16-bit BiCMOS line driver in TSSOP on a 168

Contextual Info: HY5116404B Series »HYUNDAI 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5116404B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116404B utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating

s69 lf

Abstract: 0h07 DHR38
Contextual Info: •HYUNDAI HY5116404B Series 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION T h e H Y 5 1 1 6 4 0 4 B is th e new g e n e ra tio n and fa s t d y n a m ic R A M o rg a n iz e d 4 ,1 9 4 ,3 0 4 x 4 -b it. T h e H Y 5 1 1 6 4 0 4 B u tiliz e s H y u n d a i’s C M O S silic o n g a te p ro c e s s te c h n o lo g y a s a d v a n c e d c ircu it te c h n iq u e s to p ro v id e w id e o p eratin g

HY5117404

Contextual Info: “H Y U N D A I HY5117404B, HY5116404B 4M x 4-bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION T his fa m ily is a 16M bit dynam ic RAM organized 4,194,304 x 4 -b it configuration with Extended Data O ut m ode C M O S DRAMs. Extended Data Out m ode

BEDO RAM

Abstract: hy5118160b HY512264 HY5117404 HY5118164B
Contextual Info: TABLE OF CONTENTS •H Y U N D A I 1. TABLE OF CONTENTS Index . 1 2. PRODUCT QUICK REFERENCE GUIDE

116404B

Abstract: HY5117404BT
Contextual Info: - H Y U N D A I • HY5117404B,H Y5116404B 4Mx4, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

HY5116400BT

Abstract: HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ HY531000AJ hy51v65804 HY5117400BJ
Contextual Info: • « Y U MD Al DRAM ORDERING INFORMATION 1M bit 1Mx1 HY531000AJ HY531000ALJ 60/70/80 1M bit (256KX4) HY534256AJ HY534256ALJ 45/50/60 2M bit (128KX16) HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC HY512264SLTC

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

HY514260

Abstract: HY5117404A 164-04A 4m 300mil
Contextual Info: I' PRODUCT AVAILABILITY DRAM PRODUCT 1Mbit 2M bit 4Mbit DESCRIPTION PACKAGE OPTION ACCESS TIME ns - As of '96.3Q OPERATI!« CURRENT (mA,MAX) STA»IDBY CURI*ENT (rtiA, MAX) TTL CMOS AVAILABILITY 1M x 1 F a s t Pa ge HY531000A SOJ 60/7 0/80 85/7 5/65 2 1

AUO-PL321.60

Abstract: HY51V18164B HY514264 HY514260
Contextual Info: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP

Contextual Info: •HYUNDAI H Y 5 1 1 7 4 0 4 B ,H Y 5 1 1 6 4 0 4 B 4Mx4, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 4,194,304 x 4-bit configuration w ith Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode w hich is useful for the read operation. The circuit and process

IBM025161LG5D60

Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
Contextual Info: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.

HY51V18164

Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
Contextual Info: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC