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    HY51V16404B Search Results

    HY51V16404B Datasheets (18)

    Hyundai
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    HY51V16404BJ60
    Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF 555.43KB 18
    HY51V16404BJ70
    Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF 555.43KB 18
    HY51V16404BJ80
    Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF 555.43KB 18
    HY51V16404BR60
    Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF 555.43KB 18
    HY51V16404BR70
    Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF 555.43KB 18
    HY51V16404BR80
    Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF 555.43KB 18
    HY51V16404BSLJ60
    Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF 555.43KB 18
    HY51V16404BSLJ70
    Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF 555.43KB 18
    HY51V16404BSLJ80
    Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF 555.43KB 18
    HY51V16404BSLR60
    Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF 555.43KB 18
    HY51V16404BSLR70
    Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF 555.43KB 18
    HY51V16404BSLR80
    Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF 555.43KB 18
    HY51V16404BSLT60
    Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF 555.43KB 18
    HY51V16404BSLT70
    Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF 555.43KB 18
    HY51V16404BSLT80
    Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF 555.43KB 18
    HY51V16404BT60
    Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF 555.43KB 18
    HY51V16404BT70
    Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF 555.43KB 18
    HY51V16404BT80
    Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF 555.43KB 18

    HY51V16404B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: - H Y U N D A I • HYM5V72A804B K-Series Unbuffered 8Mx72 bit EDO DRAM MODULE based on 4Mx4 DRAM, with ECC, 3.3V, 4K-Refresh GENERAL DESCRIPTION The HYM 5V72A804B K-Series is a 8Mx72-bit Extended Data Out mode CMOS DRAM m odule consisting of thirty-six HY51V16404B in 24/26 pin TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed


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    hym5v72a804b8mx725v72a804b8mx72-bit+5hy51v16404bhym5v72a804btkg168-pin2su25ci79-f PDF

    DG37

    Contextual Info: -H Y U H D A I • HYM5V72A804B N-Series Buffered 8Mx72 bit EDO DRAM MODULE based on 4Mx4 DRAM, with ECC, 3.3V, 4K-Refresh GENERAL DESCRIPTION The HYM 5V72A804B N-Series is a 8Mx72-bit Extended Data Out mode CMOS DRAM m odule consisting of thirty-six HY51V16404B in 24/26 pin TSOP-II and two 16-bit BiCMOS line driver in TSSO P on a 168 pin


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    hym5v72a804b8mx725v72a804b8mx72-bit+6hy51v16404b16-bit5v72a804btng168-pin250f6dg37 PDF

    Contextual Info: HYM5V72A804B K-Series Unbuffered 8Mx72 bit EDO DRAM MODULE based on 4Mx4 DRAM, with ECC, 3.3V, 4K-Refresh GENERAL DESCRIPTION The HYM5V72A804B K-Series is a 8Mx72-bit Extended Data Out mode CMOS DRAM module consisting of thirty-six HY51V16404B in 24/26 pin TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed


    Original
    hym5v72a804b8mx728mx72-bithy51v16404b+2hym5v72a804btkg168-pin PDF

    HY51V16404B

    Abstract: HY51V16404BR60 si17 MH-750
    Contextual Info: •HYUNDAI HY51V16404B Series 4M x 4-bit CMOS DRAM with Extended Data Out DESCRIPTION HY51V16404B is the new generation and fast dynamic RAM organizecU,194,304 x 4-bit. The HY51V16404B utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating


    OCR Scan
    hy51v16404bthehy51v16404b1ad51-10-may95+64b75dflflhy51v16404bjhy51v16404bsljhy51v16404br60si17mh-750 PDF

    hyundai hy 214

    Abstract: UL-96 SH17 wl33
    Contextual Info: • HYUNDAI HY51V17404B, HY51V16404B 4M x 4-bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION T his fa m ily is a 16M bit dynam ic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out m ode CM O S DRAMs. Extended Data Out mode


    OCR Scan
    hy51v17404bhy51v16404bhy51v17404bjhy51v17404bslj+10hy51v17404bthy51v17404bslthy51v16404bjhy51v16404bsljhy51v16404bthy51v16404bslthyundai hy 214ul-96sh17wl33 PDF

    Contextual Info: HYM5V64404B K-Series Unbuffered 4Mx64 bit EDO DRAM MODULE based on 4Mx4 DRAM, 3.3V, 4K-Refresh GENERAL DESCRIPTION The HYM5V64404B K-Series is a 4Mx64-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY51V16404B in 24/26 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy


    Original
    hym5v64404b4mx644mx64-bithy51v16404b+2hym5v64404bkg/btkg168-pin PDF

    Contextual Info: HYM5V72A404B N-Series Buffered 4Mx72 bit EDO DRAM MODULE based on 4Mx4 DRAM, with ECC, 3.3V, 4K-Refresh GENERAL DESCRIPTION The HYM5V72A404B N-Series is a 4Mx72-bit Extended Data Out mode CMOS DRAM module consisting of eighteen HY51V16404B in 24/26 pin SOJ or TSOP-II and two 16-bit BiCMOS line driver in TSSOP on a 168


    Original
    hym5v72a404b4mx724mx72-bithy51v16404b+316-bithym5v72a404bng/btng168-pin PDF

    Contextual Info: HYUNDAI HY51V16404B Series 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY51V16404B is the new generation and fa st dynam ic RAM organized4,194,304 x 4-bit. The HY51V16404B utilizes Hyundai’s CM OS silicon gate process technology as advanced circuit techniques to provide wide operating


    OCR Scan
    hy51v16404b4b75gflfl1ad51-10-may95hy51v16404bj+2hy51v16404bsljhy51v16404bt PDF

    HY51V17404B

    Abstract: 4mx4
    Contextual Info: HY51V17404B,HY51V16404B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    Original
    hy51v17404bhy51v16404b4mx4 PDF

    Contextual Info: HYM5V72A404B K-Series Unbuffered 4Mx72 bit EDO DRAM MODULE based on 4Mx4 DRAM, with ECC, 3.3V, 4K-Refresh GENERAL DESCRIPTION The HYM5V72A404B K-Series is a 4Mx72-bit Extended Data Out mode CMOS DRAM module consisting of eighteen HY51V16404B in 24/26 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy


    Original
    hym5v72a404b4mx724mx72-bithy51v16404b+2hym5v72a404bkg/btkg168-pin PDF

    Contextual Info: HYM5V72A804B N-Series Buffered 8Mx72 bit EDO DRAM MODULE based on 4Mx4 DRAM, with ECC, 3.3V, 4K-Refresh GENERAL DESCRIPTION The HYM5V72A804B N-Series is a 8Mx72-bit Extended Data Out mode CMOS DRAM module consisting of thirty-six HY51V16404B in 24/26 pin TSOP-II and two 16-bit BiCMOS line driver in TSSOP on a 168 pin


    Original
    hym5v72a804b8mx728mx72-bithy51v16404b+316-bithym5v72a804btng168-pin PDF

    HY51V16404B

    Abstract: WP4L CA3C1
    Contextual Info: 1 YUNDAI 4 M x 4 _bjt HY51V16404B Series CMos DRAM with Extended Data Out D E S C R IP T IO N The HY51V16404B is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. The HY51V16404B utilizes Hyundai's CM OS silicon gate process technology as advanced circuit techniques to provide wide operating


    OCR Scan
    hy51v16404b1ad51-104iay95hy51v16404bjhy51v16404bslj+4hy51v16404bthy51v16404bsltwp4lca3c1 PDF

    Contextual Info: •HYUNDAI H Y 5 1 V 1 7 4 0 4 B ,H Y 5 1 V 1 6 4 0 4 B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


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    PDF

    BEDO RAM

    Abstract: hy5118160b HY512264 HY5117404 HY5118164B
    Contextual Info: TABLE OF CONTENTS •H Y U N D A I 1. TABLE OF CONTENTS Index . 1 2. PRODUCT QUICK REFERENCE GUIDE


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    hy531000ahy534256a16-bithy5216257+7x16-bitdb101-20-may95bedo ramhy5118160bhy512264hy5117404hy5118164b PDF

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


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    cp005-1fis89c51z16c02z86e30+16zz16c03z8036z8536z8038z5380z53c80mn4117405nn5118165xl93lc46apnn514265ms6264l-10pcw24m257nn514265aw24m257ak-15hy62256alp10mhs p80c51 PDF

    HY514260

    Abstract: HY5117404A 164-04A 4m 300mil
    Contextual Info: I' PRODUCT AVAILABILITY DRAM PRODUCT 1Mbit 2M bit 4Mbit DESCRIPTION PACKAGE OPTION ACCESS TIME ns - As of '96.3Q OPERATI!« CURRENT (mA,MAX) STA»IDBY CURI*ENT (rtiA, MAX) TTL CMOS AVAILABILITY 1M x 1 F a s t Pa ge HY531000A SOJ 60/7 0/80 85/7 5/65 2 1


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    hy531000ahy534256a256kx8hy512800+10hy512264hy51206404ahy5116404bhy51v16404ahy51v16404bhy514260hy5117404a164-04a4m 300mil PDF

    Contextual Info: C "HYUNDAI • HY51V17404B.HY51 V16404B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    OCR Scan
    hy51v17404bv16404ba0-a11 PDF

    AUO-PL321.60

    Abstract: HY51V18164B HY514264 HY514260
    Contextual Info: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP


    OCR Scan
    hy531000ashy531000alshy531000ajhy531000alj+10hy534256ashy534256alshy534256ajhy534256aljhy512260jchy512260ljcauo-pl321.60hy51v18164bhy514264hy514260 PDF

    HY51V18164

    Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
    Contextual Info: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC


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    256kx4256x8128kx16hy534256aj+11hy534256aljhy512800jhy512800ljhy512800sljhy512264jchy512264ljchy51v18164hy5118164hy514260hy51v65400hy51v17804cj PDF