475MIL Search Results

Contextual Info: 40 PIN PLASTIC ZIP 475mil A N M 1 Q 40 K F G Y V M H J W J NOTE Each lead centerline is located within 0.25 mm (0.01 inch) of its true position (T.P.) at maximum material condition. ITEM MILLIMETERS INCHES A 51.23 MAX. 2.017 MAX. F 0.50±0.10 0.020 +0.004

Contextual Info: 6.2 17.5 Unit : mm 1.6 5.8 LB - 068 Length : 523±2.0 +0.3 Thickness : 0.7−0.2 Tolerance : ±0.4 Material : Plastic with antistatic finish Applied Package Quantity 24pin Plastic ZIP (475mil) 16 40pin Plastic ZIP (475mil) 10

Contextual Info: 40 PIN PLASTIC SHRINK ZIP 475mil N 40 Y K 1 Q M A V 2°~6° J F G H M I W P40VF-70-475A NOTE Each lead centerline is located within 0.25 mm (0.010 inch) of its true position (T.P.) at maxi– mum material condition. ITEM MILLIMETERS INCHES A 36.22 MAX. 1.426 MAX.

4N500

Abstract: IC 741 cn
Contextual Info: b427555 GG42530 Tfc.7 « N E C E / / MOS INTEGRATED CIR CU IT ju P D 4 2 S 1 6 1 9 0 , 4 2 S 1 7 1 9 0 , 4 2 S 1 8 1 9 0 16 M B IT D Y N A M IC RAM FA S T PA G E M O D E & B Y T E W R IT E M O DE - P R E LIM IN A R Y -D E S C R IP T IO N

transistor sl 431

Abstract: ZIP40-P-475
Contextual Info: O K I Sem iconductor M S M 5 1 4 1 9 0 / S L _ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514190/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate theMSM51419 0 /SL is OKI's CMOS silicon gate process technology.

AA 170 circit diagram

Abstract: 256KX16 MSM5416256 ucas zip
Contextual Info: Technical Information OKI Semiconductor MSM5416256/MSM54V16256 ¿ Lo w voltage version or V-voreion _ 262,144 Words x 16 Bits GRAPHICS BURST A C C ESS MEMORY

Contextual Info: blE D • MM^baG3 G0E32fi0 1T4 ■ H I T 2 H M 5 1 4 1 9 0 , H M 5 1 4 1 9 0 L S e r i e s -262,144-word x 18-bit Dynamic Random Access Memory HITACHI/ LOGIC/ARRAYS/ NEM The Hitachi HM 514190 are CM OS dynamic RAM organized as 262,144-w ord x 18-bit. HM 514190

Contextual Info: FEB 16 1993 November 1992 Edition 1.0 FUJITSU DATA SHEET MB8117100-60/-70/-80 „ CMOS 16Mx 1 BIT FAST PAGE MODE DYNAMIC RA CMOS 16,777,216 x 1 Bit Fast Page Mode Dynamic RAM The Fujitsu MB8117100 is a fully decoded CMOS Dynamic RAM DRAM that contains a total of

Contextual Info: FE«? i 6 '553 October 1992 Edition 3.0 FUJITSU DATA SHEET M B 8 1 1 6 1 0 1-60/-70/-80 CMOS 16Mx 1 BIT NIBBLE MODE DYNAMIC RAM CMOS 16,777,216 x 1 BIT Nibble Mode Dynamic RAM The Fujitsu MB8116101 is a fully decoded CM O S Dynamic RAM DRAM that contains a total of

Contextual Info: FÉB i 6 1993 November 1992 Edition 1.0 FUJITSU DATA SHEET MB8117400-60/-70/-80 CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM The Fujitsu MB8117400 is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216

HM514280AJ7

Abstract: HM514280AJ-7 hm514280
Contextual Info: blE I • m lb 203 0023114 535 ■ H IT S HM514280A/AL Series -HM51S4280A/AL Series 262,144-word x 18-bit Dynamic Random Access Memory HITACHI/ The Hitachi HM514280A/AL are CMOS dynamic RA M o rg an ized as 2 6 2 ,1 4 4 -w o rd x 18-bit. HM 514280A/AL have realized higher density,

GG41

Contextual Info: April 1993 Edition 2.1 FUJITSU DATA S H E E T M B 8 1 8 2 5 1 -70/-80 2097,152 Bits 262,144 x 8 Bits Multi-port CMOS Dynamic RAM The Fujitsu MB818251 is a fully decoded dual port CMOS Dynamic RAM (DRAM) organized as 262,144 words by 8 bits dynamic RAM port and 512 words by 8 bits serial

7006C

Abstract: TOA8
Contextual Info: '- / Ú - FUJITSU S3E L TD 3 7 4 cl75b G D 0 3 3 S S D .2 3 ^ /7 TOb » F C A J June 1992 Edition 1.0 FUJITSU DATA SHEET M B 8 1 4 2 6 0 A -70/-80/-10 CMOS 256K X 16 BIT FAST PAGE MODE DYNAMIC RAM CMOS 262,144 x 16 bit Fast Page Mode Dynamic RAM The Fujitsu MB814260A is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304

mb8117400

Contextual Info: FUJITSU Sepi zeliti Edition 2.0 DATA SHEET MB8117400-60/-70/-80 CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM The Fujitsu MB8117400 is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessfcle in 4-bit increments. The MB8117400 features a ’ fast page’ mode of

Contextual Info: PRELIMINARY M IC R O N 256K WIDE DRAM X MT4C16260/1 16 WIDE DRAM 256K X 16 DRAM FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • A ddress entry: ten row-addresses, eight columnaddresses • High-performance CMOS silicon-gate process

256kx16 ucas zip

Contextual Info: Technical Information OKI Semiconductor MSM5416256/MSM54V16256 {Standard-version _ Lowvoltago vflrsionor V-voremn)_ 262,144 Words x 16 Bits GRAPHICS BURST ACCESS MEMORY GENERAL DESCRIPTION The MSM5416256 is a high speed 256KX16 configuration burst access memory for high performance

IC MARKING A60

Abstract: IC 741 cn
Contextual Info: fa427S25 0D452bl *NECE MOS INTEGRATED CIRCUIT /¿ P D 4 2 S 1 6 9 0 0 L ,4 2 S 1 7 9 0 0 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O DE P R E L IM IN A R Y DESCRIPTIO N The NEC # PD42S16900L and n PD42S17900L are 2 097 152 words by 9 b its dynamic CMOS RAM

LE347

Abstract: toba Q 0265 R HS 8180 42S18180
Contextual Info: L427S2S DQ4 2 4 M4 b 70 • NECE MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 8 0 ,4 2 S 1 7 1 8 0 ,4 2 S 1 8 1 8 0 16 M BIT D Y N A M IC RAM FAST PAGE M O D E & BYTE R E A D /W R IT E M ODE - P R E LIM IN A R Y -D ESCRIPTIO N

UPD4216402

Contextual Info: NEC pPD4216402, 4217402 4,194,304 X 4-Bit Dynamic CMOS RAM NEC Electronics Inc. Advance Information Description The /JPD4216402 and the /JPD4217402 are staticcolumn dynamic RAMs organized as 4,194,304 words by 4 bits and designed to operate from a single +5-volt

Contextual Info: AW i « »02 O rd& r & M U T o c\'b f\ HM514270, HM514270L Series Preliminary 262,144-word x 16-blt Dynamic Random Access Memory ^ H I T A T he H itachi H M 514270/L are CMOS dynamic R A M o rg a n iz e d as 2 6 2 ,1 4 4 -w o rd x 16-bit. HM514270/L have realized higher density, higher

micro servo 9g

Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

Contextual Info: ADVANCE M T4C 1672 64K x 16 DRAM DRAM FAST PAGE MODE, DUAL CAS FEATURES • Industry standard xl6 pinouts, timing, functions and packages • High performance, CMOS silicon gate process • Single +5V±10% power supply • Low power, 3mW standby; 350mW active, typical

TRW catalogue

Contextual Info: MI T S U B I S H I M E M O R Y / A S I C blE D • b S MT ñH S D D 1 7 b l 2 2T1 ■ MITI MITSUBISHI LSIs M S M W ^ y O J . L J P . R T - e . ^ r Ö . - e S r y S . - S S s p jx FAST PAGE MODE 4194304-BIT(262144-WORD BY 16-BIT)DYNAMIC RAM DESCRIPTION This is a family of 262144-word by 16-bit dynamic RAMs,

STR06

Contextual Info: MITSUBISHI M E M O R Y / A S I C blE D • b 2 4 cifiSS O O l V b ? 1* 5 3 ^ ■ M I T I M ITSUBISHI L S Is M 5 M 4 V 4 2 6 0 J , L , T P , R T - 6 , - 7 , - 8 , - 6 S , - 7 S , - 8 S FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM \T A f i