MSM54 Search Results

MSM5416258A

Abstract: msm5416258
Contextual Info: E2L0047-28-Z2 This version: Dec. 1998 MSM5416258A Previous version: Jan. 1998 ¡ Semiconductor MSM5416258A ¡ Semiconductor 262,144-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5416258A is a 262,144-word ¥ 16-bit dynamic RAM fabricated in Oki's CMOS silicon gate

MSM51V4222C

Abstract: MSM51V8222A MSM54V12222A MSM54V12222A-30-TS-K MSM54V12222A-40-TS-K
Contextual Info: MSM54V12222A OKI Semiconductor OKI Semiconductor MSM54V12222A REVISION-1 1997. 9 . 30 262,214 Words ¥ 12 Bits FIELD MEMORY GENERAL DESCRIPTION The OKI MSM54V12222A is a high performance 3M bits, 256K X 12 bits, Field Memory especially designed for high-speed serial access applications such as HDTVs, conventional NTSC TVs, VTRs, digital

MSM5432128

Contextual Info: Pr E2L0045-17-Y1 el im DESCRIPTION The MSM5432126/8 is a new generation Graphics DRAM organized in a 131,072-word ¥ 32-bit configuration. The technology used to fabricate the MSM5432126/8 is OKI's CMOS silicon gate process technology. The device operates with a single 5 V power supply.

MSM5416263

Abstract: 256x16* STATIC RAM weland SM5416
Contextual Info: OKI Semiconductor MSM5416263 262,144-W ord x 1 6 -Bit M ultiport D RA M DESCRIPTION The MSM5416263 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.

MAS 10 RCD

Abstract: MSM54V32128 1DQ23
Contextual Info: O K I Semiconductor_ M SM 54V 32126/8_ 131,072-Word x 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM54V32126/8 is a new generation Graphic D RAM organized in 131,072-word x 32-bit configuration. The technology used to fabricate the MSM54V32126/8 is OKI's CM O S silicon gate

EZ23

Abstract: MSM5432128
Contextual Info: O K I Semiconductor MSM5432126/8_ 131,072-Word x 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5432126/8 is a new generation Graphic DRAM organized in 131,072-word x 32-bit configuration. The technology used to fabricate the MSM5432126/8 is OKI’s CMOS silicon gate

AA 170 circit diagram

Abstract: 256KX16 MSM5416256 ucas zip
Contextual Info: Technical Information OKI Semiconductor MSM5416256/MSM54V16256 ¿ Lo w voltage version or V-voreion _ 262,144 Words x 16 Bits GRAPHICS BURST A C C ESS MEMORY

MSM5416283-60

Abstract: MSM5416283 SAM256
Contextual Info: O KI Semiconductor MSM5416283 262,144-Word x 16-Bit Multiport DRAM DESCRIPTION The MSM5416283 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.

MSM5416272

Contextual Info: E2L0020-17-Y1 ¡ Semiconductor MSM5416272 ¡ Semiconductor This version: Jan. 1998 MSM5416272 Previous version: Dec. 1996 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM5416272 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit

MSM54V16272

Contextual Info: E2L0024-17-Y1 ¡ Semiconductor MSM54V16272 ¡ Semiconductor This version: Jan. 1998 MSM54V16272 Previous version: Dec. 1996 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM54V16272 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit

MSM5416125A

Contextual Info: E2L0049-17-Y1 ¡ Semiconductor MSM5416125A ¡ Semiconductor This version: Jan. 1998 MSM5416125A Previous version: Dec. 1996 131,072-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The OKI MSM5416125A is a 128K-word ¥ 16-bit dynamic RAM fabricated in OKI's CMOS silicon

Contextual Info: Oki Semiconductor MSM5416258A 256K-Word x 16-Bit DRAM: Fast-Page-Mode Type with EDO DESCRIPTION The MSM5416258A is a 262,144-word by 16-bit DRAM fabricated in O ki's silicon-gate CMOS technology. The M SM 5416258A achieves high integration, h igh -speed operation, an d low p ow er consum ption

256kx16 ucas zip

Contextual Info: Technical Information OKI Semiconductor MSM5416256/MSM54V16256 {Standard-version _ Lowvoltago vflrsionor V-voremn)_ 262,144 Words x 16 Bits GRAPHICS BURST ACCESS MEMORY GENERAL DESCRIPTION The MSM5416256 is a high speed 256KX16 configuration burst access memory for high performance

Contextual Info: OKI Sem iconductor MSM5416273 P relim inary 262,144 -Word x 16 Bits Multiport DRAM_ Rev.t.o GENERAL DESCRIPTION* The MSM5416273 is a 4-Mbit CMOS m ultiport DRAM composed of a 262,144-word by 16-bit dynamic RAM and a 512-words by 16-bits SAM. Its RAM and SAM operate independently and

Contextual Info: O KI Semiconductor MSM5416283 262,144-Word x 16-Bit Multiport DRAM DESCRIPTION The MSM5416283 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.

Contextual Info: OKI Semiconductor Technical Information MSM5416258B 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5416258B is a 262,144-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5416258B achieves high integration,high-speed operation,and low-power

WM1-DIN

Abstract: MSM54V1627360
Contextual Info: J2L0025-17-Y1 作成：1998年 1月 MSM54V16273 l 前回作成：1997年 9月 ¡ 電子デバイス MSM54V16273 262,144-Wordx16-Bit MULTIPORT DRAM n 概要 ）ポー

44TSOPII

Contextual Info: J2L0034-17-Y1 作成：1998年 1月 MSM5412222 l 前回作成：1997年 9月 ¡ 電子デバイス MSM5412222 暫定 262,214-Wordx12-Bit FIELD MEMORY n 概要 MSM5412222は512行×512列×12ビットのCMOSダイナミックメモリで、高速非同期リード／ラ

WM1-DIN

Abstract: sj256
Contextual Info: J2L0016-17-Y1 作成：1998年 1月 MSM548262 l 前回作成：1997年 9月 ¡ 電子デバイス MSM548262 262,144-Wordx8-Bit MULTIPORT DRAM n 概要 MSM548262は262,144ワード×8ビットのダイナミックランダムアクセスメモリ（RAM）ポート

Contextual Info: J2L0021-17-Y1 作成：1998年 1月 MSM5416273 l 前回作成：1997年 9月 ¡ 電子デバイス MSM5416273 262,144-Wordx16-Bit MULTIPORT DRAM n 概要 ）ポー

MSM54V16282

Contextual Info: FEDS54V16282-05 ¡ Semiconductor MSM54V16282 This version: Feb. 2000 Previous version: Jan. 1998 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM54V16282 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and

MSM54V16273

Contextual Info: FEDS54V16273-05 ¡ Semiconductor MSM54V16273 This version: Feb. 2000 Previous version: Jan. 1998 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM54V16273 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and

MSM5412222B

Abstract: MSM518222A MSM5412222B-25TS-K MSM5412222B-30TS-K
Contextual Info: OKI Semiconductor MSM5412222B FEDS5412222B-01 Issue Date: Nov.,20, 2002 262,214-Word x 12-Bit Field Memory GENERAL DESCRIPTION The OKI MSM5412222B is a high performance 3-Mbit, 256K × 12-bit, Field Memory. It is especially designed for high-speed serial access applications such as HDTVs, conventional NTSC TVs, VTRs, digital movies and

MSM54V16272

Contextual Info: FEDS54V16272-05 ¡ Semiconductor MSM54V16272 This version: Feb. 2000 Previous version: Jan. 1998 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM54V16272 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and