44TSOPII Search Results
44TSOPII Datasheets Context Search
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MCP3909 application note
Abstract: PIC18 example codes Spi slave PIC18 example C18 codes ADC TM162JCAWG1 hOW TO READ mcp3909 Explorer-16 PIC18 external interrupt example codes PIC18 example codes SPI master mini project using PIC microcontroller with sources code LCD control using dsPIC33
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mcp390916-bitds51777ads51777a-page+10 | |
MR27T802FContextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008. |
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mr27t802f | |
MR27V802FContextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008. |
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mr27v802f | |
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Contextual Info: CY14B104K, CY14B104M 4-Mbit 512 K x 8/256 K × 16 nvSRAM with Real Time Clock 4-Mbit (512 K × 8/256 K × 16) nvSRAM with Real Time Clock Features • 25 ns and 45 ns access times ■ Internally organized as 512 K × 8 (CY14B104K) or 256 K × 16 (CY14B104M) |
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cy14b104kcy14b104m44-pin54-pin | |
16202
Abstract: HY23V16202 HY23V16202D HY23V16202S HY23V16202T 48TSOP
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1mx16/2mx8hy23v1620242pin100/120ns+6 | |
CY62157CV25
Abstract: CY62157CV30 CY62157CV33 CY62157DV30 CY62157DV30L CY62157DV30LL
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cy62157dv30i/o1545-ns70-ns+5 | |
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Contextual Info: PRELIMINARY CY14B104K, CY14B104M 4 Mbit 512K x 8/256K x 16 nvSRAM with Real Time Clock Features • Watchdog timer ■ 20 ns, 25 ns, and 45 ns access times ■ Clock alarm with programmable interrupts ■ Internally organized as 512K x 8 (CY14B104K) or 256K x 16 |
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cy14b104kcy14b104m8/256k54-pin | |
CY7C1049CV33-12VXI
Abstract: CY7C1049CV33-15ZXI CY7C1049CV33-15VXI CY7C1049CV33-12ZXC CY7C1049CV33 CY7C1049CV33-10VC CY7C1049CV33-10VI CY7C1049CV33-10ZC CY7C1049CV33-10ZI CY7C1049CV33-12VC
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cy7c1049cv33-20-nscy7c1049cv33-15zsxecy7c1049cv33-12vxi+8 | |
CY7C1049CV33-10ZXCContextual Info: CY7C1049CV33 4-Mbit 512K X 8 Static RAM Features Functional Description • Temperature ranges ❐ Commercial: 0°C to 70°C ❐ Industrial/Automotive -A: –40°C to 85°C ❐ Automotive-E: –40°C to 125°C The CY7C1049CV33 is a high performance CMOS Static RAM |
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cy7c1049cv33cy7c1049cv33-10zxc | |
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Contextual Info: PRELIMINARY CY14B104KA, CY14B104MA 4 Mbit 512K x 8/256K x 16 nvSRAM with Real-Time-Clock Features • Watchdog timer ■ 20 ns, 25 ns, and 45 ns access times ■ Clock alarm with programmable interrupts ■ Internally organized as 512K x 8 (CY14B104KA) or 256K x 16 |
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cy14b104kacy14b104ma8/256k54-pin | |
CY14E104NContextual Info: PRELIMINARY CY14E104L/CY14E104N 4 Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14E104L) or 256K x 16 (CY14E104N) ■ Hands off automatic STORE on power down with only a small |
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cy14e104l/cy14e104n8/256kcy14e104n | |
SRAM 54-PIN TSOPContextual Info: PRELIMINARY CY14B104L/CY14B104N 4-Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns and 25 ns access times • Internally organized as 512K x 8 or 256K x 16 • Hands-off automatic STORE on power down with only a small capacitor • STORE to QuantumTrap nonvolatile elements is initiated |
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cy14b104l/cy14b104n8/256kto10nsto15ns+1 | |
usb flash drive circuit diagram sandisk
Abstract: research paper on wireless usb 3.0 vhdl code for ECC encryption SAMSUNG NAND FLASH TRANSLATION LAYER FTL SAMSUNG NAND FLASH TRANSLATION LAYER suyin camera SUYIN Connector usb USB, Card Reader Audio player circuit sandisk mmc 16MB Micron 32MB NOR FLASH
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15-micron256mb512mbusb flash drive circuit diagram sandisk+9 | |
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Contextual Info: CY14B104K, CY14B104M 4-Mbit 512 K x 8/256 K × 16 nvSRAM with Real Time Clock 4-Mbit (512 K × 8/256 K × 16) nvSRAM with Real Time Clock Features • Watchdog timer ■ 25 ns and 45 ns access times ■ Clock alarm with programmable interrupts ■ Internally organized as 512 K × 8 (CY14B104K) or 256 K × 16 |
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cy14b104kcy14b104m44-pin54-pin | |
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MR27T802FContextual Info: FEDR27T802F-002-06 Issue Date: Oct. 01, 2008 MR27T802F 512k–Word x 16–Bit or 1M–Word × 8–Bit P2ROM FEATURES PIN CONFIGURATION TOP VIEW • 512k-word × 16-bit / 1M-word × 8-bit electrically switchable configuration · +2.7 V to 3.6 V power supply |
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fedr27t802f-002-06mr27t802f512k-word16-bit+6 | |
schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
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p462-ndp463-ndlng295lfcp2ulng395mftp5u+11 | |
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Contextual Info: PRELIMINARY CY14E104K/CY14E104M 4-Mbit 512K x 8 / 256K x 16 nvSRAM with Real-Time-Clock Features • 15 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14E104K) or 256K x 16 (CY14E104M) ■ Hands off automatic STORE on power down with only a small |
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cy14e104k/cy14e104mcy14e104kcy14e104m | |
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Contextual Info: CY14B104K, CY14B104M 4-Mbit 512 K x 8/256 K × 16 nvSRAM with Real Time Clock Features • Watchdog timer ■ 25 ns and 45 ns access times ■ Clock alarm with programmable interrupts ■ Internally organized as 512 K × 8 (CY14B104K) or 256 K × 16 (CY14B104M) |
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cy14b104kcy14b104m44-pin54-pin | |
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Contextual Info: CY14B104K, CY14B104M 4-Mbit 512 K x 8/256 K × 16 nvSRAM with Real Time Clock 4-Mbit (512 K × 8/256 K × 16) nvSRAM with Real Time Clock Features • 25 ns and 45 ns access times ■ Internally organized as 512 K × 8 (CY14B104K) or 256 K × 16 (CY14B104M) |
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cy14b104kcy14b104m44-pin54-pin | |
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Contextual Info: CY7C1049CV33 4-Mbit 512K X 8 Static RAM Features Functional Description n Temperature ranges p Commercial: 0°C to 70°C p Industrial/Automotive -A: –40°C to 85°C p Automotive-E: –40°C to 125°C The CY7C1049CV33 is a high performance CMOS Static RAM |
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cy7c1049cv33 | |
TSOP II 54
Abstract: TSOP 48 thermal resistance junction to case TSOP 48 thermal resistance TSOP 54 thermal resistance
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cy14b104lcy14b104n8/256kcy14b104l/cy14b104n+4 | |
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Contextual Info: 4MX16/8MX8 BIT CMOS MASK ROM HY23V64200 Description The HY23V64200 high per formance read onl y m em or y i s or gani z ed ei th er a s 8,38 8,608 x 8bi t byte mode or as 4,194,304 x16 bit(word mode) and has an access time of 100/120ns. It needs no external |
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4mx16/8mx8hy23v64200100/120ns44sop+2 | |
Arduino Mega2560
Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
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cy8c38cy8c29incl79512t9797+16 | |
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Contextual Info: PRELIMINARY GM76FV16256/ GM76FU16256/ GM76FS16256 GM76FR16256 262 , 144w o r d s x 16 b it CMOS STATIC RAM LG S e m i c o n C o .,L t d . Description Features The G M 76FV 16256/ G M 76FU 16256/ G M 76FS16256/ •Power Supply V oltage G M 76FR 16256 is a 4,194,304 bits static random access |
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gm76fv16256/gm76fu16256/gm76fs16256gm76fr16256+4 | |