millenium 3 crouzet user guide
Abstract: millenium 2 crouzet user guide crouzet automatismes mas 10 rcd 89 750 003 millenium 2 crouzet programming manual crouzet MAS programming crouzet MAS 20 rca programming Crouzet Millenium mas 20 crouzet automatismes mas 10 rcd MAS 10 RCA, 240V AC crouzet MAS 10 RCD
Text: MILLENIUM INSTALLATION MANUAL NTR 735 A/E Simple Automation Control Module MAS MAS INSTALLATION MANUAL NTR 735 A Table of contents 1. INTRODUCTION 1 2. HARDWARE DESCRIPTION 2 3. INSTALLATION 5 4. CONNECTION 6 5. USER SAFETY AND PROTECTION OF EQUIPMENT 8
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GT 1081
Abstract: MAS 10 RCD IGBT GT 1081 igbt 3 KA transistor GT 1081 T1791 rcd 103 35d56 DS30 GS11
Text: Click on outline no. IGBT and GCT - Freewheeling Diodes Type V DRM V D 1031 SH D 1331 SH D 1641 SX D 1181 SX D 1441 SX D 931 SH D 1131 SH *) 4500 4500 4500 6000 6000 6500 6500 estimate failure rate λ ~ 100 fit V(D)D *) I(FSM) ∫i2dt V(F)/I(FM) kV kA A²s
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MAS 10 RCD
Abstract: No abstract text available
Text: VG26 V (S)17405 4,194,304 x 4 - Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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26/24-pin
50/60ns
127mm)
025mm)
1G5-0124
MAS 10 RCD
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Untitled
Abstract: No abstract text available
Text: VIS VG26 V (S)17405FJ 4,194,304 x 4 - Bit CMOS Dynamic RAM Description The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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17405FJ
26/24-pin
50/60ns
127mm)
025mm)
1G5-0162
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Untitled
Abstract: No abstract text available
Text: VG26 V (S)18165C 1,048,576 x 16 - Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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18165C
42-pin
50/60ns
1G5-0158
18165CJ-5
18165CJ-6
400mil
18165CJ-5
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MAS 10 RCD
Abstract: No abstract text available
Text: VG26 V (S)17405FJ 4,194,304 x 4 - Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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17405FJ
26/24-pin
50/60ns
660/6L
127mm)
025mm)
1G5-0162
MAS 10 RCD
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MAS 10 RCD
Abstract: No abstract text available
Text: VG26 V (S)18165C 1,048,576 x 16 - Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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18165C
42-pin
50/60ns
1G5-0147
18165CJ-5
400mil
42-Pin
18165CJ-6
MAS 10 RCD
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Untitled
Abstract: No abstract text available
Text: VG26 V (S)17405 4,194,304 x 4 - Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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26/24-pin
50/60ns
127mm)
025mm)
1G5-0146
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Untitled
Abstract: No abstract text available
Text: VG26 V (S)17405 4,194,304 x 4 - Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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26/24-pin
50/60ns
127mm)
025mm)
1G5-0124
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Untitled
Abstract: No abstract text available
Text: VIS VG26 V (S)17405 4,194,304 x 4 - Bit CMOS Dynamic RAM Description The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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26/24-pin
50/60ns
127mm)
025mm)
1G5-0124
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17405CJ
Abstract: No abstract text available
Text: VG26 V (S)17405C 4,194,304 x 4 - Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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17405C
26/24-pin
50/60ns
127mm)
025mm)
1G5-0088
17405CJ
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Untitled
Abstract: No abstract text available
Text: VG26 V (S)18165C 1,048,576 x 16 - Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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18165C
42-pin
50/60ns
1G5-0158
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18165CJ
Abstract: No abstract text available
Text: VIS VG26 V (S)18165C 1,048,576 x 16 - Bit CMOS Dynamic RAM Description The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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18165C
42-pin
50/60ns
1G5-0158
18165CJ
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MAS 10 RCD
Abstract: No abstract text available
Text: VIS VG26 V (S)17405 4,194,304 x 4 - Bit CMOS Dynamic RAM Description The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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26/24-pin
50/60ns
127mm)
025mm)
1G5-0124
MAS 10 RCD
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cd 3313 eo
Abstract: history of old system speech control circuitry D01400
Text: ADVANCE INFORMATION MAS 3509F MPEG Layer 2/3 and AAC Audio Decoder SC4 Speech Codec Edition April 4, 2000 6251-505-1 Al ♦MICRONAS MCNSS0014S MAS 3509F ADVANCE INFORMATION Contents Page Section Title 5 5 6 1. 1.1. 1.2. Introduction Features Application Overview
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3509F
MCNSS0014S
3509F
cd 3313 eo
history of old system speech control circuitry
D01400
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MAS 10 RCD
Abstract: M74000
Text: GMM784000BS-60/70/80 LG Semicon Co.,Ltd. Description The GMM784000BS is a 4M x 8 bits Dynamic RAM Module which is assembled 8 picces of 4M bit DRAM GM71C4100BJ, 4 M x l in 20/26 pin small out-line J-form on a 30 pin single in-line package. The G M M 784000BS is a socket type memory
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GMM784000BS-60/70/80
GMM784000BS
GM71C4100BJ,
784000BS
GMM784000BS-
GMM784000BS
MAS 10 RCD
M74000
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IGBT GT 1081
Abstract: No abstract text available
Text: IGBT and GCT - Freewheeling Diodes t Type 1 w j V D R M V w V (D )D 1 * 1 i l(F S M ) I Freilaufdioden w Jfdt n V(f/I( fm) kV kA A2s V/2,5kA Tc=25 sin,10ms sin, 10ms Tvj=Tvi max typ. Tvj max Tvj max sin i r\ l(R M ) Q ( rr) A mAs 73T/Zux 1 (-di/dt)com d
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73T/Zux
IGBT GT 1081
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Untitled
Abstract: No abstract text available
Text: VG26 V {S)17405 4,194,304x4-Bit CMOS Dynamic RAM Description The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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304x4-Bit
26/24-pin
50/60ns
34-Pin
15nra)
25rara)
l27mro)
025mro)
1G5-0124
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Untitled
Abstract: No abstract text available
Text: VG26 V (S)18165C 1 ,0 4 8 ,5 7 6 x 1 6 -Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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18165C
42-pin
50/60ns
G5-0158
age26
18165CJ-5
400mil
42-Pin
18165CJ-6
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Untitled
Abstract: No abstract text available
Text: VIS VG26 V (S)17405 4,194,304x4-B it CMOS Dynamic RAM D escription The device C M O S D ynam ic RAM organized as 4 ,1 9 4 ,3 0 4 w ords x 4 bits w ith extended d ata out access m ode. It is fabricated w ith an advanced subm icron C M O S te ch n o lo g y and designed to operate from a single
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304x4-B
26/24-pin
26/24-P
7405E
127mm)
1G5-0124
age27
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7405 truth table
Abstract: TTL IC 7405
Text: VIS VG26 V (S)17405 4,194,304x4-B it CMOS Dynamic RAM Description The device C M O S D ynam ic RAM organized as 4 ,1 9 4 ,3 0 4 w o rd s x 4 bits w ith extended d ata out access m ode. It is fa bricated w ith an advanced subm icron C M O S te ch n o lo g y and designed to operate from a single
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304x4-B
26/24-pin
50/6S
26/24-P
7405EJ-5
127irun)
G5-0124
7405 truth table
TTL IC 7405
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Untitled
Abstract: No abstract text available
Text: VG26 V (S)18165C 1,048,576x16-B it CMOS Dynamic RAM VIS Description The device C M O S D ynam ic RAM organized as 1,048,576 w o rd s x 16 bits w ith extended d ata out access m ode. It is fa bricated w ith an advanced subm icron C M O S te ch n o lo g y and designed to operate from a single
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18165C
576x16-B
42-pin
50/60ns
G5-0147
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motorola 6803
Abstract: No abstract text available
Text: K M National À jÌ Semiconductor ADVANCE INFORMATION TP3451 ISDN HDLC and GCI Controller General Description Features The TP3451 is a microprocessor peripheral communica tions device designed as both a full-duplex HDLC Framing and formatting controller, and a serial GCI General Circuit
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TP3451
64-byte
TP3451
TL/H/10727-18
motorola 6803
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dwa 108 a
Abstract: TP3421 network crad J28A TP3410 TP3451 TP3451J TP3451N tp3057 TE1127.3
Text: TP3451 ADVANCE INFORMATION National Semiconductor TP3451 ISDN HDLC and GCI Controller General Description Features The TP3451 is a microprocessor peripheral communica tions device designed as both a full-duplex HDLC Framing and formatting controller, and a serial GCI General Circuit
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TP3451
64-byte
TL/H/10727-19
TL/H/10727-20
dwa 108 a
TP3421
network crad
J28A
TP3410
TP3451J
TP3451N
tp3057
TE1127.3
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