HY511 Search Results

Contextual Info: HY5117400A Series -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400A is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The HY5117400A utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: «HYUNDAI HYM564404A K-Series Unbuffered 4M x 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT _ DESCRIPTION The HYM564404A is a 4M x 64-bit EDO mode CMOS DRAM module consisting of sixteen HY5116404A in 24/26 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 nF and 0.01

Contextual Info: •HYUNDAI HYM532124A W-Series 1M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532124A is a 1M x 32-bit EDO mode CMOS DRAM module consisting of two HY5118164B in 42/42 pin S O J or 44/50 pin TSOPII on a 72 pin glass-epoxy printed circuit board. Two 0.01 nF decoupling capacitors are

Contextual Info: «HYUNDAI H Y 5 1 1 7 1 O O A S e r ie s 1 6 M x 1 - b it CM O S DRAM DESCRIPTION The HY5117100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5117100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: HYUNDAI HY5117410 Series SEMICONDUCTOR 4M X 4-bit CMOS DRAM with Write-Per-Bit DESCRIPTION The HY5117410 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit with function of Write-Per-Bit. The HY5117410 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced

HYM53

Contextual Info: • HYUNDAI HYM536A810A M-Series 8M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536A81OA is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of eighteen HY5117400A in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each

HY5116100B

Contextual Info: HY5116100B Series -HYUNDAI 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100B is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. HY5116100B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: HYM581600 M-Series •H Y U N D A I 16M X 8-bit CMOS ORAM MODULE DESCRIPTION The HYM581600 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22/xF decoupling capacitor Is mounted for

HYM536410MG

Contextual Info: HYM536410 M -Series •HYUN DAI 4M X 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536410 is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400 in 24/28 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22pF decoupling

Contextual Info: HYUNDAI SEMICONDUCTOR HYM581600 Series 16M X 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581600 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22p.F decoupling capacitor is mounted for

Contextual Info: •HYUNDAI SEMICONDUCTOR HY5116400 Series 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400 utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: • HYUNDAI HYM532224A E-Series 2M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532224A is a 2M x 32-bit EDO m ode CMOS DRAM m odule consisting of four HY5117804B in 28/28 pin SOJ or TSOPII and an AND gate in 16 pin SOP on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling

Contextual Info: HY5117400A Series ••HYUNDAI 4M x 4-bit CMOS DRAM DESCRIPTION me HY5117400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. "Hie HY5117400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: HY5116400A Series •{HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating

Contextual Info: H Y 5 1 1 6 1 O O A •HYUNDAI S e r ie s 16Mx 1-bit CMOS DRAM DESCRIPTION The HY51161 OOA is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51161 OOA utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: HYM581610 M -Series HYUNDAI 16M x8-bit CMOS DRAM MODULE DESCRIPTION The HYM581610 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5117100 in 24/28 pin SOJ or TSOP-il on a 30 pin glass-epoxy printed circuit board. 0.22//F decoupling capacitor is mounted for

Contextual Info: • • H Y U N D A I H Y 5 1 1 7 8 1 0 S e r ie s 2 M x 8-bit CMOS DRAM with WPB DESCRIPTION The HY5117810 is the new generation and fast dynamic RAM organized 2,097,152 x 8-bit. The HY5117810 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: ^HYUNDAI HYM564224A R-Series Unbuffered 2M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM564224A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of eight HY5118164B in 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 ¡aF and

Contextual Info: •HYUNDAI HYM536400B Series SEMICONDUCTOR 4M X 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536400B is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of nine HY5116400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0 .2 2ftF decoupling capacitor is mounted for each DRAM.

5117404

Contextual Info: HY 5117404A Series “H Y U N D A I 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5117404A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117404A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: "HYUNDAI HYM532220A W-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220A is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of four HY5118160B in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mourtted for

Contextual Info: •HYUNDAI H Y 5 1 1 7 4 0 0 S e r ie s 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117400 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: •HYUNDAI HYM53221OA E-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM53221 OA is a 2M x 32-bit Fast Page mode CMOS DRAM module consisting of four HY5117800B in 28/28 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for

Contextual Info: HYUNDAI H Y 5 1 1 7 1 0 0 SEMICONDUCTOR Series 16Mx 1-bit CM OS DRAM DESCRIPTION The HY5117100 is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5117100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating