PD444 Search Results

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD4442162-Y, 4442182-Y, 4442322-Y, 4442362-Y 4M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION SINGLE CYCLE DESELECT Description The µPD4442162-Y is a 262,144-word by 16-bit, the µPD4442182-Y is a 262,144-word by 18-bit, µPD4442322-Y is

uPD444016LG5-A10Y-7JF-A

Abstract: uPD444016LG5-A12Y-7JF-A uPD444016LG5-A8Y-7JF-A TSOP10 PD444016LG5-AxxY-7JF-A PD444016L-Y
Contextual Info: データ・シート MOS 集積回路 MOS Integrated Circuit PD444016L-Y 4M ビット CMOS 高速スタティック RAM 256K ワードx16 ビット 動作温度拡張品 μPD444016L-Y は 4,194,304 ビット（262,144 ワード×16 ビット）の CMOS 高速スタティック RAM です。

M15502

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD4442161-Y, 4442181-Y, 4442321-Y, 4442361-Y 4M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION Description The µPD4442161-Y is a 262,144-word by 16-bit, the µPD4442181-Y is a 262,144-word by 18-bit, the µPD4442321-Y

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD4442163-Y, 4442183-Y, 4442323-Y, 4442363-Y 4M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION DOUBLE CYCLE DESELECT Description The µPD4442163-Y is a 262,144-word by 16-bit, the µPD4442183-Y is a 262,144-word by 18-bit, µPD4442323-Y is

PD444016-Y

Contextual Info: データ・シート MOS 集積回路 MOS Integrated Circuit PD444016-Y 4M ビット CMOS 高速スタティック RAM 256K ワードx16 ビット 動作温度拡張品 μPD444016-Y は 4,194,304 ビット（262,144 ワード×16 ビット）の CMOS 高速スタティック RAM です。

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT A PD444016 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The ,PD444016 is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.

UPD444

Abstract: UPD444-1 MPD444
Contextual Info: PD444 /¿PD444-1 /PD444-2 /PD444-3 ^ NEC NEC Electronics U.S.A. Inc. Microcomputer Division 1024 x 4-BIT STATIC CMOS RAM DESCRIPTION T h e /PD444 is a high-speed, lo w p o w e r s ilic o n gate C M OS 4 0 9 6 b it s ta tic R A M o rg a ­ n ize d 1 02 4 w o rd s b y 4 b its . I t uses DC stable s ta tic c ir c u itr y th ro u g h o u t and th e re ­

nec 444 ram

Abstract: PD2114L PD444C MPD444C 2SO 765 PD42S18160 uPD444-3 pd2114 MPD444 nec chic
Contextual Info: PD444 /¿PD444-1 /PD444-2 /PD444-3 ^ NEC NEC Electronics U.S.A. Inc. Microcomputer Division 1024 x 4-BIT STATIC CMOS RAM D ESCR IPTIO N The /PD444 is a high-speed, low power silicon gate CMOS 4096 bit static RAM orga­ nized 1024 words by 4 bits. It uses DC stable static circuitry throughout and there­

thermometer lm35 with 7segment

Abstract: v850e2 dSMC rb40 bridge bridge rb60 kawasaki r142 DW7000 SD16CS BT31 ME200
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PD23C64020

Abstract: PD45D128442 4M84 PD45D128842 256M5 0443 IC PD23C64000AL 45V16A PD264 A80L
Contextual Info: IC Memory CD-ROM IC Memory CD-ROM X13769XJ2V0CD00 04-1 IC Memory Dynamic RAM • Synchronous DRAM: SDR Single Data Rate , 256M bits (x4 bits organization) Density (bits) Organization (words × bits × banks) Part number 256M★ 16M×4×4 µ PD45256441 Speed

d44401

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT _ ¿ ¿ P D 4 4 4 0 1 0 L - X 4M-BIT CMOS STATIC RAM 512K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ,PD444010L-X is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM.

Js SMD MARKING CODE SOT23

Abstract: SMD MARKING CODE M 4 Diode smd diode A82 1N4148 diode SMD marking 46 sot-23 DIODE SMD MARKING 5C SOT23 DIODE marking CODE 28 sot-23 MARKING AAD marking A82 SOT-23 Diode smd code cm
Contextual Info: SMD Switching Diodes TYPE NO. CA SE DESCRIPTION BAS28 BAS56 C L L 914 CLL2CJ03 CLL4150 CLL4448 CLL5001 CM PD914 C M P D IO O I C M P D IO O I A SO T -143 SO T -143 S O D -8 O SO D -8O S O D -8O S O D -8 O S O D -8 O SOT-23 SOT-23 SOT-23 C M P D IO O IS CM P02003

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT _ ¿ ¿ P D 4 4 4 0 1 2 L - X 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The ,PD444012L-X is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM.

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT jU P D 4 4 4 0 1 6 L 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The ^¡PD444016L is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.

T3D DIODE

Abstract: T3D 45 diode diode T3D diode T3D 25 T3D 40 DIODE Diode T3D 08 T3D 18 diode T3D 77 diode Diode T3D 30 Diode T3D 35
Contextual Info: S P RAG UE /S EM IC ON D GROUP 8 5 14019 SPRAGUE, D • S E M I C O N D S / ICS 0513550 0003b27 S 93 D 0 3 6 2 7 SMALL-OUTLINE DIODES i ‘TMPD’ General-Purpose and Low-Leakage Diodes ELECTRICAL CHARACTERISTICS at TA = 25°C VF Device Type »rr Max. ns

TSOP10

Abstract: 43A16
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

BC5508

Abstract: 6CW66 BC5588 BC8488 TRANSISTOR bc5508 1GW NPN 8C546 smd transistor marking 1gw 1gw transistor SMD Transistors 1gw
Contextual Info: Selection Guide Page Small Signal Transistors 42 Small Signal MOSFETs 43 Junction FETs 44 Power Transistors 49 Switching Diodes 50 Schottky Diodes 51 Low Leakage Diodes 52 Stabistor Diodes 52 Zener Diodes 53 Transient Voltage Suppressors TVS 57 Current Limiting Diodes

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD444008L 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT Description The ^¡PD444008L is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.

uPD444016LG5-A10Y-7JF-A

Abstract: uPD444016LG5-A12Y-7JF-A uPD444016LG5-A8Y-7JF-A
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

triac tag 8518

Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Contextual Info: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference

SAW30

Abstract: V850E2 STB236 DW7000 m8512 p3098 TLR124 PD703111 dSMC U16794JJ3V0AN
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

UPD444C

Abstract: MPD444C PD444C MPD444 UPD444-1 upd444 nec nec 444 ram nec ram upd444c PD444 ram 2114L
Contextual Info: PD444 /¿PD444-1 /PD444-2 /PD444-3 ^ NEC NEC Electronics U.S.A. Inc. Microcomputer Division 1024 x 4-BIT STATIC CMOS RAM DESCRIPTION The /PD444 is a high-speed, low power silicon gate CMOS 4096 b it static RAM orga­ nized 1024 words by 4 bits. It uses DC stable static circ u itry throug hou t and there­

PD4300

Contextual Info: HIGH POWER DIVIDERS/COMBINERS FREQUENCY MHz INSERTION PHASE POWER LOSS BALANCE ISOLATION VSWR (Watts) (±dB, Max.) (±Deg. Max.) (dB, Min.) (Max.) (CW) MODEL NUMBER STANDARD CONNECTORS INPUT/OUTPUT OUTLINE 2-WAY DIVIDERS 0.16 – 0.32 0.225 – 0.40 0.32 – 0.60

transistor C3866

Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
Contextual Info: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)