UPD444016 Search Results

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT A PD444016 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The ,uPD444016 is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.

PD444016LG5-A8-7JF

Abstract: PD444016LG5-A12-7
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD444016L 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The μPD444016L is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The μPD444016L is packaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II).

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD444016 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The μPD444016 is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The μPD444016 is packaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II).

uPD444016LG5-A8Y-7JF-A

Abstract: 44-PIN uPD444016LG5-A10Y-7JF-A
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD444016L-Y 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The μPD444016L-Y is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.

2sk2500

Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

thermometer lm35 with 7segment

Abstract: v850e2 dSMC rb40 bridge bridge rb60 kawasaki r142 DW7000 SD16CS BT31 ME200
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose

Contextual Info: データ･シート MOS 集積回路 MOS Integrated Circuit PD444016L 4M ビット CMOS 高速スタティック RAM 256K ワードx16 ビット μPD444016L は 4,194,304 ビット（262,144 ワード×16 ビット）の CMOS 高速スタティック RAM です。

AM 5888

Abstract: SAMSUNG mcp Reliability SAMSUNG MCP PD23C32000A B12 nec diode cypress flash 370 SUNRISE TSOP 12 20 a85x E40/16/12 pd442
Contextual Info: Through the latest technological advancements, we're developing new memory products to meet present and future needs. NEC Electronics is a market leader in memory products, continuously delivering products with the latest cutting-edge technology. Today, a new demand is

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT jU P D 4 4 4 0 1 6 L 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The ^¡PD444016L is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD444016L-Y 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The μPD444016L-Y is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.

PD70F3447

Abstract: uPD70F3187 uPD70F3447 board mk81 PD70F3347 PD70F3187 IF86 afcan V850E MK-92 mk102
Contextual Info: User’s Manual TM V850E/PH2 32-Bit Single-Chip Microcontroller Hardware PD70F3187 μPD70F3447 Document No. U16580EE3V1UD00 Date Published January 2007 NEC Electronics Corporation 2007 Printed in Germany NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN

transistor NEC 2SK2500

Abstract: NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

uPD444016LG5-A10Y-7JF-A

Abstract: uPD444016LG5-A12Y-7JF-A uPD444016LG5-A8Y-7JF-A TSOP10 PD444016LG5-AxxY-7JF-A PD444016L-Y
Contextual Info: データ・シート MOS 集積回路 MOS Integrated Circuit PD444016L-Y 4M ビット CMOS 高速スタティック RAM 256K ワードx16 ビット 動作温度拡張品 μPD444016L-Y は 4,194,304 ビット（262,144 ワード×16 ビット）の CMOS 高速スタティック RAM です。

Contextual Info: User’s Manual TM V850E/PH2 32-Bit Single-Chip Microcontroller Hardware µPD70F3187 Document No. U16580EE2V0UD00 Date Published June 2006 NEC Electronics Corporation 2006 Printed in Germany NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD444016L 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The μPD444016L is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The μPD444016L is packaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II).

uPD444016LG5-A10Y-7JF-A

Abstract: uPD444016LG5-A12Y-7JF-A uPD444016LG5-A8Y-7JF-A
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

PD444016-8

Contextual Info: データ･シート MOS 集積回路 MOS Integrated Circuit PD444016 4M ビット CMOS 高速スタティック RAM 256K ワードx16 ビット μPD444016 は 4,194,304 ビット（262,144 ワード×16 ビット）の CMOS 高速スタティック RAM です。

A12Y

Abstract: A10y nec ddr PD48288236 SUNRISE TSOP 12 20
Contextual Info: December 2008 2008.12 NEC Electronics will develop much more new memory products to meet the customer needs by making use of the high technical capabilities accumulated through the long development experience in leading-edge memory products. NEC Electronics has been continuously dedicating the cutting-edge

M144

Abstract: PD444016-8
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD444016 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The μPD444016 is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The μPD444016 is packaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II).

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD444016-Y 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The μPD444016-Y is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.

UPD44164185F5-E60-EQ1

Abstract: UPD44165362F5-E60-EQ1 UPD444016LG5-A12-7JF UPD4482161GF-A85 UPD44325094F5-E33-EQ2 uPD431232ALGF-A10 uPD431232ALGF-A12 uPD431232ALGF-A7 uPD431232ALGF-A8 uPD431532LGF-A10
Contextual Info: NEC * - Tie down extra four I/Os with resistor uPD4382321GF-A85 GS880F32BT-7.5 + - Tie down extra two I/Os with resistor uPD4382321GF-A90 GS880F32BT-7.5 uPD4382322GF-A67 GS88032BT-200 UPD4311231LGF-A7 GS81032AT-5 uPD4382322GF-A75 GS88032BT-150 UPD4311231LGF-A8