TMPD459 Search Results

Contextual Info: TMPD459 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current500m @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage1 @I(FM) (A) (Test Condition)3m @Temp. (øC) (Test Condition)25

TMPD4150

Abstract: MARKING K2A A8920SLR TMPD4148 TMPD4153 TMPD4154 TMPD4448 TMPD459 TMPD5711 TMPD6916
Contextual Info: ALLEGRO MICROSYSTEMS INC blE D • D5DH33a D D D b 3 lì7 73T ■ AL6R DIODES SOT-23/TO-236AB see also A8920SLR ‘TMPD’ GENERAL-PURPOSE ELECTRICAL CHARACTERISTICS at TA = 25°C VF Device Type TMPD459 TMPD914 TMPD4148 TMPD4150 TMPD4153 ^B R Max. (mA) Min.

Contextual Info: DIODES S O T -23/T O -236A B see also A 8 9 2 0 S L R ‘TMPD’ GENERAL-PURPOSE ELECTRICAL CHARACTERISTICS at TA, = 25°C V F Description Max. ‘ rr Max. Max. Pinning (V) (nA) (ns) <PF> 1,2,3 V BR Max. Min. Max. Marking <mA) (V) Device Type @ IF (mA)

DIODE A6

Abstract: diode 5f TND903 DIODE CHIP 1N4148 A6 DIODE 1n4148 MONOLITHIC DIODE ARRAYS 1n4148 5D mark A6 DIODE 1N4148 diode 5d
Contextual Info: «tSPROGUE DIODES > DIODES » DIODES » DIODES » DIODES THE MARK OF SERIES TMPD MICROMINIATURE DIODES • Series T M P D consists of s ta n d a rd U .S .A . single or dual diodes. • Devices are molded in a T 0 - 2 6 3 A A high-profile or T O - 2 3 6 A B (low profile) pa cka g e . These pa cka ge s are

Diode 5A

Abstract: bkd marking TMPD4148 TMPD2835 TMPD2837 TMPD2838 TMPD4150 TMPD4153 TMPD4154 TMPD459
Contextual Info: AL LE GR O M I C R O S Y S T E M S 8 5 1 4 0 1 9 SP RA GU E. INC T3 D • DSGM33Ô S E M I C O N D S / ICS 0GD3b5? 93 D 0 3 6 2 7 1 *ALGR V T'Q / ~ 9 0 SMALL-OUTLINE DIODES j ‘TMPD’ General-Purpose and Low-Leakage Diodes ELECTRICAL CHARACTERISTICS at TA = 25°C