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    MONOLITHIC DIODE ARRAYS Search Results

    MONOLITHIC DIODE ARRAYS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    MONOLITHIC DIODE ARRAYS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Diode Motorola 711 2N2905A

    Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching


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    MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 MV2103 Diode Motorola 711 2N2905A pin configuration transistor BC547 2N2222 BC237 2N555 PDF

    IEC-801-2 ESD

    Abstract: MONOLITHIC DIODE ARRAYS tvs-diode TVS RS422 TVS diode line voltage Application Note
    Text: Ei8LC05 thru Ei8LC15 Low Capacitance, Bidirectional, Monolithic TVS Diode Network independent for multiple I/O port protection. These monolithic diode array networks can be used to protect combinations of 8 unidirectional or bi-directional lines. They provide ESD and


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    Ei8LC05 Ei8LC15 Ei8LC12CX Ei8LC15CX com/PRESS/PR012601 IEC-801-2 ESD MONOLITHIC DIODE ARRAYS tvs-diode TVS RS422 TVS diode line voltage Application Note PDF

    MMAD1109

    Abstract: MMAD130 MMAD1103 MMAD1105 MMAD1107
    Text: MOTOROLA Order this document by MMAD130/D SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching


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    MMAD130/D MMAD130/D MMAD1109 MMAD130 MMAD1103 MMAD1105 MMAD1107 PDF

    1N6510 JAN

    Abstract: 1N6510 LINFINITY linfinity 1N6100 1N6101 1N6510 1N6511 SG6100 SG6101 SG6511
    Text: SG6100/SG6511 SG6101/SG6510 DIODE ARRAY CIRCUITS DESCRIPTION FEATURES The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has


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    SG6100/SG6511 SG6101/SG6510 SG6100/SG6511 SG6101/SG6510 1N6100) 14-PIN SG6101J 1N6101) 1N6510 JAN 1N6510 LINFINITY linfinity 1N6100 1N6101 1N6510 1N6511 SG6100 SG6101 SG6511 PDF

    array networks

    Abstract: No abstract text available
    Text: Ei8LCXXX Monolithic Low Capacitance TVS Diode Network independent for multiple I/O port protection. These monolithic diode array networks can be used to protect combinations of 8 unidirectional or bi-directional lines. They provide ESD and surge protection for sensitive power and I/O


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    Ei8LC05CX Ei8LC08CX Ei8LC12CX Ei8LC15CX array networks PDF

    MAD130P

    Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching


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    MMAD1108 De218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MAD130P 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72 PDF

    Untitled

    Abstract: No abstract text available
    Text: UC1610 UC2610 UC3610 Dual Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array • Exceptional Efficiency This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection


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    UC1610 UC2610 UC3610 UC3610DW UC3610DWTR UC3610N UC3610Q UC3610QTR SSYA008 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5768 Monolithic Air Isolated Diode Array SCOTTSDALE DIVISION APPEARANCE 10-PIN Ceramic Flat Pack WWW . Microsemi .C OM DESCRIPTION These low capacitance diode arrays with common cathode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as


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    1N5768 10-PIN 1N5770 1N5768 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5770 Monolithic Air Isolated Diode Array SCOTTSDALE DIVISION APPEARANCE 10-PIN Ceramic Flat Pack WWW . Microsemi .C OM DESCRIPTION These low capacitance diode arrays with common anode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as


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    1N5770 10-PIN 1N5768 1N5768 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5770 Monolithic Air Isolated Diode Array SCOTTSDALE DIVISION APPEARANCE 10-PIN Ceramic Flat Pack WWW . Microsemi .C OM DESCRIPTION These low capacitance diode arrays with common anode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as


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    1N5770 10-PIN 1N5768 1N5768 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5768 Monolithic Air Isolated Diode Array SCOTTSDALE DIVISION APPEARANCE 10-PIN Ceramic Flat Pack WWW . Microsemi .C OM DESCRIPTION These low capacitance diode arrays with common cathode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as


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    1N5768 10-PIN 1N5770 1N5768 PDF

    Untitled

    Abstract: No abstract text available
    Text: TH-C1840-P / TH-C1840-R n ACTIVELY COOLED 40W CW LINEAR BAR ARRAY DESCRIPTION The TH-C1840-P and TH-C1840-R(n) products are based upon highly performing 40W CW Laser Diode Bar Arrays. The Laser Diode structure is multiple emitters spaced on a monolithic 1cm


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    TH-C1840-P TH-C1840-R 8021-ed2 PDF

    diode 8008

    Abstract: TH-C1725-P TH1725
    Text: TH-C1725-S &TH-1725-P / TH-C1730-S &TH-C1730-P 25W / 30W CW LINEAR BAR ARRAY DESCRIPTION The TH-C1xx-S or P products are highly performing 25W CW and 30W CW Laser Diode Bar Arrays. The Laser Diode structure is multiple emitters spaced on a monolithic 1cm


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    TH-C1725-S TH-1725-P TH-C1730-S TH-C1730-P 79ver 8008-ed3 diode 8008 TH-C1725-P TH1725 PDF

    THOMSON-CSF Power Laser diode

    Abstract: TH-C1730-S
    Text: TH-C1725-S / TH-C1730-S CONDUCTIVELY COOLED 25W / 30W CW LINEAR BAR ARRAY DESCRIPTION The TH-C17XX-P products are highly performing 25W CW and 30W CW Laser Diode Bar Arrays. The Laser Diode structure is multiple emitters spaced on a monolithic 1cm "bar".The bar is mounted with the active zone


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    TH-C1725-S TH-C1730-S TH-C17XX-P 860nm TH-C1730-S THOMSON-CSF Power Laser diode PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N6507 Monolithic Air Isolated Diode Array SCOTTSDALE DIVISION APPEARANCE These low capacitance diode arrays with common anode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing


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    1N6507 10-PIN 1N6506 1N6507 PDF

    silicon general 16 pin ceramic dip J

    Abstract: No abstract text available
    Text: SG6100/SG6101 SILICON ADVANCED DATA SHEET GENERAL DIODE ARRAY CIRCUITS LINEAR INTEGRATED CIRCUITS DESCRIPTION FEATURES The SG6100 and SG6101 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100 is configured with 7 straight


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    SG6100/SG6101 100mA SG6100 SG6101 16-PIN SG6101J 14-PIN SG6100F silicon general 16 pin ceramic dip J PDF

    MMAD1107

    Abstract: mmad1103 MMAD1105 MMAD1109 Ad1103
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high-current, fast-sw itching core-driver applications. These arrays offer many of the advantages of integrated


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    MMAD130 MAD1105 MMAD1107 mmad1103 MMAD1105 MMAD1109 Ad1103 PDF

    MMAD1108

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8-Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high-current, fast-switching


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    MMAD1108 MMAD1108 PDF

    CVD-450

    Abstract: Laser Diode 808 nm
    Text: LASER DIODE INC 1SE D I Sl&EI&B DODDMSl 5 I T -fh O f C VD-400 SERIES LASER DIODE, INC. QUASI CW LASER DIODE ARRAYS FEATURES: ► ► ► ► ► ► ► DESCRIPTION: The CVD-400 series lasers are Gallium Aluminum Arse­ nide Monolithic Quantum Well Arrays made by MOCVD


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    VD-400 CVD-400 CVD-450 Laser Diode 808 nm PDF

    SG6101J

    Abstract: sg6101
    Text: IlSFMTY SG6100/SG6511 SG6101/SG6510 M I C R O E L E C T R O N I C S DIODE ARRAY CIRCUITS FEATURES DESCRIPTION The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has


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    SG6100/SG6511 SG6101/SG6510 16-PIN SG6101J 1N6101) 14-PIN SG6101J sg6101 PDF

    Untitled

    Abstract: No abstract text available
    Text: CA3141 HARRIS SEMICONDUCTOR High-Voltage Diode Array For Commercial, Industrial & Military Applications March1993 Features Description • Matched Monolithic Construction - VF for Each Diode Pair Matched to Within 0.55mV Typ at lF - 1mA The CA3141E High Voltage Diode Array Consists of ten gen­


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    CA3141 CA3141E CA3141 h1993 PDF

    Untitled

    Abstract: No abstract text available
    Text: TH-C1840-PI TH-C1840-R n ACTIVELY COOLED 40W CW LINEAR BAR ARRAY DESCRIPTION The TH-C1840-P and TH-C1840-R(n) products are based upon highly performing 40W CW Laser Diode Bar Arrays. The Laser Diode structure is multiple emitters spaced on a monolithic 1cm


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    TH-C1840-PI TH-C1840-R TH-C1840-P 8021-ed2 PDF

    FSA2619P

    Abstract: FSA2510M FSA2719M FSA2510P FSA2620M FSA2619M FSA2510 FSA2719P MONOLITHIC DIODE ARRAYS FSA2619M FSA2566P
    Text: Diode Data NATL SEMICOND DISCRETE H E I D bSO liaO 0037007 Ô | T-43-2 4 Monolithic Diode Arrays Plastic - Ceramic - Metal Packages Device No. Package No. Configuration V rhm V Min FSA2510M TO-116-2 M16S 60 FSA2510P M 16S TO-116 *rr ns Max Test Cond. Proci


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    0a37G07 T-43-2 FSA2510M O-116-2 FSA2509 FSA2510P O-116 FSA2563M FSA2619P FSA2719M FSA2620M FSA2619M FSA2510 FSA2719P MONOLITHIC DIODE ARRAYS FSA2619M FSA2566P PDF

    TH-C1725-R

    Abstract: No abstract text available
    Text: TH-C1725-R n I TH-C1730-R(n) ACTIVELY COOLED 25W / 30W CW LINEAR BAR ARRAYS DESCRIPTION The TH-C17XX-R(n) products are based upon highly performing 25W CW and 30W CW Laser Diode Bar Arrays. The Laser Diode structure is multiple emitters spaced on a monolithic 1cm


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    TH-C1725-R TH-C1730-R TH-C17XX-R TH-C1725-R7 TH-C1730-R7 8007-ed2 PDF