PD914 Search Results

Js SMD MARKING CODE SOT23

Abstract: SMD MARKING CODE M 4 Diode smd diode A82 1N4148 diode SMD marking 46 sot-23 DIODE SMD MARKING 5C SOT23 DIODE marking CODE 28 sot-23 MARKING AAD marking A82 SOT-23 Diode smd code cm
Contextual Info: SMD Switching Diodes TYPE NO. CA SE DESCRIPTION BAS28 BAS56 C L L 914 CLL2CJ03 CLL4150 CLL4448 CLL5001 CM PD914 C M P D IO O I C M P D IO O I A SO T -143 SO T -143 S O D -8 O SO D -8O S O D -8O S O D -8 O S O D -8 O SOT-23 SOT-23 SOT-23 C M P D IO O IS CM P02003

SMD diode C5C

Abstract: smd diode A82 SMD diode Ca6 SMD diode CA2 dual diode 1N4148 SMD smd diode 1N4148 sot23 1N4148 diode SOD 80 1n4148 smd diode 1N4148 diode SMD type smd diode marking code L51
Contextual Info: SMD Switching Diodes TYPE NO. CASE DESCRIPTION BAS28 BAS 56 CLL914 CLL2003 CLL4150 CLL4448 CLL5001 CM PD914 CMPD1001 CMPD1001A SOT-143 SOT-143 SOD-8O SOD-80 SOD-8O SOD-8O SOD-8O SOT-23 SOT-23 SOT-23 CMPD1001S CMPD20Û3 CMPD2004 CMPD2004S SOT-23 SOT-23 SOT-23

Contextual Info: User’s Manual V850E/RS1TM 32-/16-bit Single-Chip Microcontroller with CAN Interface Hardware µPD70F3402, µPD70F3403, µPD70F3403A Document No. U16702EE3V2UD00 Date Published April 2006 NEC Electronics Corporation 2006 Printed in Germany NOTES FOR CMOS DEVICES

IRFP3710

Abstract: IRF3710 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD-91490C IRFP3710 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V Ω RDS on = 0.025W G Description ID = 57A S Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD-91449C IRG4BC20UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

marking K2 diode

Abstract: MARKING 5D DIODE schottky diode marking A7
Contextual Info: DIODE wffife SOT-23/TO-236AB ‘TM PD ’ GENERAL-PURPOSE a n d LOW-LEAKAGE D IO D ES ELECTRICAL CHARACTERISTICS a t T . = 25°C vF Description *rr Max. Max. nA (ns) <PF) 1 ,2 ,3 10 25 4.0 6.0 ANCK VBR Min. Max. Marking (mA) (V) (V) @IF (mA) 1.0 Device Type

IRFP3710

Abstract: IRF3710 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD-91490C IRFP3710 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.025W G Description ID = 57A S Fifth Generation HEXFETs from International Rectifier

PA09 8 PIN TO-3 PACKAGE DIMENSIONS

Abstract: cs486 upd70f3403a V850 fg2 p521 gr INTR10
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

T3D DIODE

Abstract: T3D 45 diode diode T3D diode T3D 25 T3D 40 DIODE Diode T3D 08 T3D 18 diode T3D 77 diode Diode T3D 30 Diode T3D 35
Contextual Info: S P RAG UE /S EM IC ON D GROUP 8 5 14019 SPRAGUE, D • S E M I C O N D S / ICS 0513550 0003b27 S 93 D 0 3 6 2 7 SMALL-OUTLINE DIODES i ‘TMPD’ General-Purpose and Low-Leakage Diodes ELECTRICAL CHARACTERISTICS at TA = 25°C VF Device Type »rr Max. ns

BC5508

Abstract: 6CW66 BC5588 BC8488 TRANSISTOR bc5508 1GW NPN 8C546 smd transistor marking 1gw 1gw transistor SMD Transistors 1gw
Contextual Info: Selection Guide Page Small Signal Transistors 42 Small Signal MOSFETs 43 Junction FETs 44 Power Transistors 49 Switching Diodes 50 Schottky Diodes 51 Low Leakage Diodes 52 Stabistor Diodes 52 Zener Diodes 53 Transient Voltage Suppressors TVS 57 Current Limiting Diodes

IRHY9230CM

Abstract: IRHY93230CM JANSF2N7383 JANSR2N7383
Contextual Info: PD-91401 IRHY9230CM JANSR2N7383 200V, P-CHANNEL REF: MIL-PRF-19500/615 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHY9230CM 100K Rads (Si) IRHY93230CM 300K Rads (Si) RDS(on)

IRFP3710

Abstract: irf 460A TO-247AC Package IRF3710 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD-91490C IRFP3710 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.025W G Description ID = 57A S Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD-91490C IRFP3710 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V Ω RDS on = 0.025W G Description ID = 57A S Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD-91416E RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7064 JANSR2N7431U 60V, N-CHANNEL REF: MIL-PRF-19500/664 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNA7064 100K Rads (Si) IRHNA3064 300K Rads (Si) IRHNA4064

JANSR2N7425

Abstract: IRHM9160 IRHM93160 JANSF2N7425 35AA L082
Contextual Info: PD-91415G IRHM9160 JANSR2N7425 100V, P-CHANNEL REF: MIL-PRF-19500/660 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM9160 100K Rads (Si) 0.073Ω IRHM93160 300K Rads (Si) 0.073Ω

IRG4BC20UD equivalent

Abstract: IRG4BC20UD PD-91449C
Contextual Info: PD-91449C IRG4BC20UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD-91415G IRHM9160 JANSR2N7425 100V, P-CHANNEL REF: MIL-PRF-19500/660 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM9160 100K Rads (Si) 0.073Ω IRHM93160 300K Rads (Si) 0.073Ω

Pnp transistor smd ba rn

Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Contextual Info: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj

70F34

Abstract: PD911 transistor 2.048 MT1 seven segmen cec p77 transistor cs312 FP4 material NEC 03F PA09 8 PIN TO-3 PACKAGE DIMENSIONS PD912
Contextual Info: Preliminary User’s Manual V850E/RS1TM 32-/16-bit Single-Chip Microcontroller with CAN Interface Hardware µPD70F3402, µPD70F3403 Document No. U16702EE1V0UD00 Date Published January 2005  NEC Corporation 2005 Printed in Germany NOTES FOR CMOS DEVICES

Contextual Info: User’s Manual V850E/RS1TM 32-/16-bit Single-Chip Microcontroller with CAN Interface Hardware µPD70F3402, µPD70F3403, µPD70F3403A Document No. U16702EE3V1UD00 Date Published February 2006  NEC Electronics Corporation 2006 Printed in Germany NOTES FOR CMOS DEVICES

IRG4BC20UD

Abstract: IRG4BC20UD equivalent
Contextual Info: PD-91449C IRG4BC20UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD-91401 IRHY9230CM JANSR2N7383 200V, P-CHANNEL REF: MIL-PRF-19500/615 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHY9230CM 100K Rads (Si) IRHY93230CM 300K Rads (Si) RDS(on)

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment